Abstract: The present invention relates to a desulfurizing agent of improved oxidation resistance, ignition resistance and productivity, and a method for manufacturing the desulfurizing agent. The desulfurizing agent may include a plurality of magnesium-aluminum alloy grains with grain boundaries, and a compound of one selected from consisting of magnesium and aluminum and one selected from consisting of alkaline metal and alkaline earth metal, the compound exists in the grain boundaries and is not inside but outside of the magnesium-aluminum alloy grains.

Abstract: Disclosed are a thin film transistor and a method of manufacturing the thin film transistor. An electrode layer of the thin film transistor includes a seed layer formed of a transparent conductive material doped with indium gallium zinc oxide (IGZO) and a main layer formed of a transparent conductive material. The thin film transistor includes a substrate, a gate electrode on the substrate, a gate insulation film on the substrate to cover the gate electrode, a semiconductor layer disposed on the gate insulation film in a region corresponding to the gate electrode, an electrode layer having a double layer structure and disposed on the gate insulation film in a manner such that a topside portion of the semiconductor layer is exposed through the electrode layer, and a passivation layer on the gate insulation film to cover the semiconductor layer and the electrode layer.

Abstract: The present invention relates to an inorganic light-emitting device, and more particularly, to an inorganic light emitting device having superior mechanical strength and a long lifespan, and which is capable of maintaining uniform and high efficiency of light emission, and has transparent and flexible characteristics. The inorganic light emitting device of the present invention includes a first electrode, a fluorescent layer formed on the first electrode, and which includes a plurality of nanowires made of inorganic light-emitting materials, and a second electrode formed on the fluorescent layer. The fluorescent layer is coated with the plurality of nanowires.

Abstract: Disclosed are a thin film transistor having high reliability and providing a simplified fabricating process, and a method of fabricating the thin film transistor. In the method, a dielectric substrate is prepared, a semiconductor layer is formed on the dielectric substrate, a gate dielectric film is formed on the semiconductor layer, a first gate electrode is formed on the gate dielectric film, a second gate electrode contacting a side wall of the first gate electrode is formed, and impurities are implanted into the semiconductor layer using the first gate electrode as a mask.

Abstract: Disclosed is a digital garment that can provide a high-speed communication path by using a digital band that is quickly and easily attachable to a conventional garment (clothes), and a fabricating method thereof. The digital garment includes: a garment formed of textile; a digital band provided along the outside or inside of the garment so as to provide a communication path; a sensor, attached to the garment, being electrically coupled to the digital band, converting a physical signal into an electrical signal; an operation device, attached to the garment, being electrically coupled to the digital band, receiving the electrical signal from the sensor and processing the signal; and a communication module, attached to the garment, being electrically coupled to the digital band so as to perform wireless communication.

Abstract: A digital garment and a fabrication method thereof are provided. The digital garment is fabricated using a knitting technique. The digital garment comprises a plurality of knitting yarns forming loops at regular intervals and interwoven through the loops, and one or more conductive digital yarns tied to the loops of the knitting yarns to form high-speed information communication circuits. The knitting yarns and the digital yarns are knitted together into a garment. During knitting, the digital yarns are used to form high-speed information communication circuits in a rapid and economical manner.