Abstract: A memory correcting method includes steps: providing a memory with a plurality of memory bytes; respectively adding a plurality of correcting bytes to the plurality of memory bytes; providing a plurality of non-volatile compared memory bytes; detecting whether there are any underperforming bits in the plurality of memory bytes, the plurality of correcting bytes, and the plurality of compared memory bytes of the memory to complete the correction. Alternatively, the method respectively provides a plurality of compared memory address bytes for the plurality of memory bytes and for the plurality of correcting bytes for labeling underperforming-bit addresses. Then, the method detects whether there are any underperforming bits in the plurality of memory bytes, the plurality of correcting bytes, and the plurality of compared memory address bytes of the memory to complete the correction.

Abstract: A method for self-terminated writing with quasi-constant voltage drop across resistive-type memory cell is provided. The method comprises: creating a writing voltage and a writing current flowing through a resistive memory cell; reproducing the writing current to generate a reproduced writing current; flowing the reproduced writing current through a dummy circuit to generate a dummy writing voltage; adding the dummy writing voltage and a reference voltage to generate a reference writing voltage, wherein the dummy writing voltage slightly and proportionally increases during writing; and adjusting the writing voltage and the writing current according to the reference writing voltage so that a voltage drop across the resistive memory cell keeps constant or slightly increases during writing. When the reproduced writing current reaches a predetermined target current value, a termination signal is issued.