Abstract: The present invention is directed to an arrangement for forming one or more separated scores in a surface of a substrate. The arrangement comprises a laser for providing a laser beam, optical guiding means for guiding said laser beam to said surface of said substrate, means for moving said substrate relative to said laser beam in at least one cutting direction for forming said scores, and primary splitting means for splitting said laser beam into a plurality of primary cutting beams for forming said scores parallel to each other. Said primary splitting means are arranged for moving said primary cutting beams relative to each other for adjusting the separation between said parallel scores. The invention is further related to a method for forming one or more separated scores in a surface of a substrate.

Abstract: A method and arrangement for treating a substrate processed using a laser beam, wherein said substrate comprises at least a body of semiconductor material. The method comprises a step of etching said substrate for removing from said body of semiconductor material recast material deposited on said body during said laser processing. The step of etching is controlled for removing in addition to said recast layer, at least a part of said semiconductor material of said body for improving mechanical strength of said substrate.

Abstract: A method of separating semiconductor elements formed in a wafer of semiconductor material using a laser producing a primary laser beam, and an arrangement and diffraction grating used in the method. The at least one primary laser beam is split into a plurality of secondary laser beams using a first diffraction grating having at least a first grating structure relative to the wafer, by impinging the at least one primary laser beam on the first grating structure. At least one first score is formed by moving the laser relative to the wafer in a first direction. The method further forms at least one second score by moving the laser relative to the wafer in a second direction. Before moving the laser relative to the wafer in the second direction, the method alters the first grating structure to a second grating structure relative to the wafer.

Abstract: The present invention relates generally to a method of and arrangement treating a substrate processed using a laser beam, wherein said substrate comprises at least a body of semiconductor material. The method comprises a step of etching said substrate for removing from said body of semiconductor material recast material deposited on said body during said laser processing. In particular, the step of etching is controlled for removing at least a part of said semiconductor material of said body for improving mechanical strength of said substrate.

Abstract: The present invention is directed to an arrangement for forming one or more separated scores in a surface of a substrate. The arrangement comprises a laser for providing a laser beam, optical guiding means for guiding said laser beam to said surface of said substrate, means for moving said substrate relative to said laser beam in at least one cutting direction for forming said scores, and primary splitting means for splitting said laser beam into a plurality of primary cutting beams for forming said scores parallel to each other. Said primary splitting means are arranged for moving said primary cutting beams relative to each other for adjusting the separation between said parallel scores. The invention is further related to a method for forming one or more separated scores in a surface of a substrate.