Abstract: A wearable programming unit (WPU) (1 10, 1 10a-1 10b) for assisting a user deploy air burst munition (ABM, 10) from a rifle (20) in an intuitive manner is described. The WPU has a ballistic processor (112), wireless communication channels (120), a vibrator (130), a display (130), a mode button (150) and up/down select buttons (160, 161). After an ABM is selected and loaded into the rifle, and a deployment distance entered in the WPU, the ballistic processor calculates and outputs a time of burst T and barrel angle alpha. The barrel angle alpha is received by a sighting unit (104) and appears as a target marker. Once the rifle is tilted and/or moved so that a centre of the sighting unit coincides with the target marker, the WPU vibrates as a signal to the user to trigger the rifle.

Abstract: The present invention describes an electronic fuze operable to complement a mechanical point impact fuze. The electronic fuze includes a voltage generator circuit, micro-controller, a piezo-electric sensor, a firing circuit and a safety lockout circuit. When a projectile strikes a target at an optimum angle, the mechanical point impact fuze is activated; when the strike angle is oblique, the mechanical point impact fuze may be ineffective but the piezo-electric sensor is operable to trigger the firing circuit. The safety lockout circuit ensures the firing circuit is operative only after a predetermined delay time when an n-channel FET is turned OFF. The micro-controller also generates a TIME-OUT signal, which provides for self-destruction of a projectile that has failed to explode.

Abstract: The present invention describes an electronic fuze (200) operable to complement a mechanical point impact fuze (101). The electronic fuze (200) includes a voltage generator circuit (210), micro-controller (220), a piezo-electric sensor (262), a firing circuit (280) and a safety lockout circuit (290). When a projectile (50) strikes a target at an optimum angle, the mechanical point impact fuze (101) is activated; when the strike angle is oblique, the mechanical point impact fuze may be ineffective but the piezo-electric sensor (262) is operable to trigger the firing circuit (280). The safety lockout circuit (290) ensures the firing circuit (280) is operative only after a predetermined delay time when an n-channel FET (292) is turned OFF. The micro-controller (220) also generates a TIME-OUT signal, which provides for self-destruction of a projectile that has failed to explode.

Abstract: The present invention describes a projectile (100,100a,100b,100c,100d) containing two luminescent dye components (123,125) and a dye powder (126). The first luminescent dye component (123) is contained in an ampoule (122) while the second luminescent dye component is contained in a vial (124) disposed inside the ampoule (122). A front crusher (120,120a) is provided at a front of the ampoule to crush into the ampoule and vial, thereby allowing the dye components to react and give a luminous glow. Upon impact at a target, a nose cap (110) of the projectile (100,100a,100b,100c,100d) breaks and a rear crusher (130) behind the ampoule throws the ampoule (122) forward and sputters the luminous dye out of the nose cap (110); at the same time, the dye powder (126) surrounding the ampoule is sputtered out to mark the point of impact. In addition, a thermal glow is also provided to mark the point of impact. Projectiles also allow light tracing.

Abstract: The present invention describes an improved cartridged projectile (100). The cartridged projectile (100) comprises a projectile (110) seating at a mouth of a cartridge case (130). The cartridge case (130) has a base (134) that houses a high pressure chamber (150). A side of the high pressure chamber (150) is capped by a pressure disc (170), which is secured onto the base of the cartridge case by a nozzle ring (160). The nozzle ring (160) has a tapered or conical surface that allows the pressure disc (170) to flex, and a surface (171) of the pressure disc (170) exterior of the high pressure chamber has intersecting V-shaped grooves (172). When propellant in the high pressure chamber (150) is burned efficiently, high pressure gases developing inside the high pressure chamber cause the pressure disc (170) to rupture at a predetermined pressure along the grooves (172) so that the gases propel the projectile (110) out of a barrel at a higher speed of about 100 m/s or more.

Abstract: The present invention describes a projectile (100, 100a,100b,100c,100d) containing two luminescent dye components (123,125) and a dye powder (126). The first luminescent dye component (123) is contained in an ampoule (122) whilst the second luminescent dye component is contained in a vial (124) disposed inside the ampoule (122). A front crusher (120,120a) is provided at a front of the ampoule to crush into the ampoule and vial, thereby allowing the dye components to react and give a luminous glow. Upon impact at a target, a nose cap (110) of the projectile (100,100a,100b,100c,100d) breaks and a rear crusher (130) behind the ampoule throws the ampoule (122) forward and sputters the luminous dye out of the nose cap (110); at the same time, the dye powder (126) surrounding the ampoule is sputtered out to mark the point of impact. In addition, a thermal glow is also provided to mark the point of impact. Projectiles also allow light tracing.

Abstract: The present invention describes an improved cartridged projectile (100). The cartridged projectile (100) comprises a projectile (110) seating at a mouth of a cartridge case (130). The cartridge case (130) has a base (134) that houses a high pressure chamber (150). A side of the high pressure chamber (150) is capped by a pressure disc (170), which is secured onto the base of the cartridge case by a nozzle ring (160). The nozzle ring (160) has a tapered or conical surface that allows the pressure disc (170) to flex, and a surface (171) of the pressure disc (170) exterior of the high pressure chamber has intersecting V-shaped grooves (172). When propellant in the high pressure chamber (150) is burned efficiently, high pressure gases developing inside the high pressure chamber cause the pressure disc (170) to rupture at a predetermined pressure along the grooves (172) so that the gases propel the projectile (110) out of a barrel at a higher speed of about 100 m/s or more.

Abstract: The present invention describes methods for programming trigger time of a projectile (60) based on remaining flight time to a target (P) after the projectile (60) is airborne. The actual muzzle (Vo) and flight speeds (V1, V2, etc.) are independently determined and compared to those used by the ballistic computer (30), and a better estimate of trigger time is accordingly used to activate detonation of the projectile (60). In one embodiment, a Kalman algorithm is used to provide a better estimate of the projectile's flight speeds obtained by independent methods to provide the better estimate of the trigger time.

Abstract: The present invention describes an electronic fuze (200) operable to complement a mechanical point impact fuze (101). The electronic fuze (200) includes a voltage generator circuit (210), micro-controller (220), a piezo-electric sensor (262), a firing circuit (280) and a safety lockout circuit (290). When a projectile (50) strikes a target at an optimum angle, the mechanical point impact fuze (101) is activated; when the strike angle is oblique, the mechanical point impact fuze may be ineffective but the piezo-electric sensor (262) is operable to trigger the firing circuit (280). The safety lockout circuit (290) ensures the firing circuit (280) is operative only after a predetermined delay time when an n-channel FET (292) is turned OFF. The micro-controller (220) also generates a TIME-OUT signal, which provides for self-destruction of a projectile that has failed to explode.

Abstract: The present invention provides a self destruction impact fuse for fail-proof detonating a projectile, preferably a low velocity projectile. The present invention further provides a projectile that can be detonated reliably even at low velocity.

Abstract: The present invention discloses a wafer which includes a semiconductor substrate having a top surface and a device layer disposed near the top surface for fabrication of integrated circuits (ICs) therein. The wafer also includes an insulating layer beneath the device layer for insulating the device layer with the ICs to be fabricated therein. The wafer further includes a doped region in the substrate. The doped region may be a layer beneath the insulating layer. The doped region is a region of sufficient volume whereby the doped region may be used as a charge sink for protecting the IC devices to be fabricated on the device layer from being damaged by the electric static discharge (ESD) and electric over stress (EOS). Furthermore, the doped region is a region of sufficient dopant concentration whereby the doped region may be used as an electrical connecting means for the IC devices to be fabricated in the device layer such that the doped region becomes a part of integration of the IC devices.

Abstract: The present invention discloses a wafer which includes a semiconductor substrate having a top surface and a device layer disposed near the top surface for fabrication of integrated circuits (ICs) therein. The wafer also includes an insulating layer beneath the device layer for insulating the device layer with the ICs to be fabricated therein. The wafer further includes a doped region in the substrate. The doped region may be a layer beneath the insulating layer. The doped region is a region of sufficient volume whereby the doped region may be used as a charge sink for protecting the IC devices to be fabricated on the device layer from being damaged by the electric static discharge (ESD) and electric over stress (EOS). Furthermore, the doped region is a region of sufficient dopant concentration whereby the doped region may be used as an electrical connecting means for the IC devices to be fabricated in the device layer such that the doped region becomes a part of integration of the IC devices.

Abstract: An ion source apparatus is disclosed in this invention. The ion source apparatus includes an anode having an interior space for containing a plasma and an opening into the space. The ion source apparatus further includes a hollow cathode within the space. The ion source apparatus further includes a dopant ion-source composed of compounds comprising element selected from a group of elements consisting of silicon and germanium, the dopant ion-source disposed next to the space. The ion source apparatus further includes a voltage means connected to the anode, the hollow cathode, and the dopant ion source for discharging a plasma into the space for bombarding the dopant ion source for generating a dopant ion compound. The ion source apparatus further includes an ion-beam extracting means for extracting the dopant ion compound through the opening. In an alternate preferred embodiment, the ion source apparatus employs an electron beam device to generate the dopant ion compound.

Abstract: A semiconductor having at least one p-channel transistor (10) with shallow p-type doped source/drain regions (16 and 18) which contain boron implanted into the doped regions (16 and 18) in the form of a compound which consists of boron and an element (or elements) selected from the group which consists of element of substrate (21) and elements which forms a solid solution with the substrate (21). In particular, in the case of silicon substrate, the compound may comprise BSi2, B2Si, B4Si and B6Si. The use of such compounds enables the highly reliable contacts to be formed on the p-doped regions.

Abstract: Three process flows for manufacturing the micro-lens array substrates are disclosed. The process flows consist of two main parts. The first part of the process flows involves fabrication of a master mold. The first two process flows utilize photolithography means to print and dry etch the micro-lens array pattern on the substrate, which is covered by a oxidation or a wet etch stopping layer. The desired surface curvature corresponding to the desired size, shape, and pattern of the micro-lens array is created by either oxidizing the exposed silicon layer (in the first process flow) or to wet-etch the exposed SiO2 by using HF solutions (in the second process flow). The third process flow creates damaged areas by using a focused laser light at first. Then, the damaged areas are preferably etched by solutions, leaving the desired surface curvature.

Abstract: A semiconductor having at least one p-channel transistor (10) with shallow p-type doped source/drain regions (16 and 18) which contain boron implanted into the doped regions (16 and 18) in the form of a compound which consists of boron and an element (or elements) selected from the group which consists of element of substrate (21) and elements which forms a solid solution with the substrate (21). In particular, in the case of silicon substrate, the compound may comprise BSi2, B2Si, B4Si and B6Si. The use of such compounds enables the highly reliable contacts to be formed on the p-doped regions.

Abstract: This invention discloses a programmable read-only-memory (PROM). The PROM is formed and supported on a substrate. The PROM includes a transistor region in the substrate including a source region, a drain region and a floating gate region disposed between the drain region and the source region. The PROM further includes a floating gate formed on top of the floating gate region with a single poly layer on the substrate. The PROM further includes a floating gate extension region disposed near the transistor region, the floating gate extension region is connected with the floating gate region. The PROM further includes a control gate formed on the substrate near the floating gate extension region opposite the transistor region whereby a charge state of the floating gate extension region is controlled by the control gate.

Abstract: A method for manufacturing shallowly doped semiconductor devices. In the preferred embodiment, the method includes the steps of: (a) providing a substrate where the substrate material is represented by the symbol Es (element of the substrate); and (b) implanting the substrate with an ion compound represented by the symbol E1.sub.x Ed.sub.y, where E1 represents an element having high solubility in the substrate material with minimal detrimental chemical or electrical effects and can be the same element as the substrate element, Ed (dopant element) represents an element which is an electron acceptor or donor having high solubility limit in the substrate material, and x and y indicate the number of respective E1 and Ed atoms in the ion compound.

Abstract: The invention is furnace fittings in which supports made of silicon nitride or of other ceramic are formed so as to be removably fitted to a base, the supports being formed also so as to support a "green" artefact such as dental artefacts during firing of the green artefact in a furnace.