Abstract: Various energy efficient data encoding schemes and computing devices are disclosed. In one aspect, a method of transmitting data from a transmitter to a receiver connected by plural wires is provided. The method includes sending from the transmitter on at least one but not all of the wires a first wave form that has first and second signal transitions. The receiver receives the first waveform and measures a first duration between the first and second signal transitions using a locally generated clock signal not received from the transmitter. The first duration is indicative of a first particular data value.

Abstract: A memory device and a method of making the memory device are provided. A first dielectric layer is formed on a substrate, a floating gate is formed on the first dielectric layer, a second dielectric layer is formed on the floating gate, a control gate is formed on the second dielectric layer, and at least one film, including a conformal film, is formed over a surface of the memory device.

Abstract: A method of manufacturing a non-volatile memory device includes forming a number of memory cells. The method also includes depositing a first dielectric layer over the memory cells, where the first dielectric layer is a conformal layer having a substantially uniform thickness. The method further includes depositing a second dielectric layer over the first dielectric layer. Together, the first and second dielectric layers form an interlayer dielectric without voids.

Abstract: The present invention generates model scenarios of semiconductor chip design and uses interpolation and Monte Carlo, with random number generation inputs, techniques to iteratively assess the models for a more comprehensive and accurate assessment of design space, and evaluation under projected manufacturing conditions. This evaluation information is then incorporated into design rules in order to improve yield.

Abstract: The present invention provides a method and apparatus for controlling processing tools and related control units. The method includes accessing information indicative of at least one excursion of at least one processing tool detected by a first control unit associated with the at least one processing tool. The method also includes determining at least one action to be taken by at least one second control unit associated with the at least one processing tool based on the information indicative of said at least one excursion.

Abstract: A method and apparatus for coupling to a source line is disclosed. A semiconductor structure having an array of memory cells arranged in rows and columns is described. The array of memory cells includes a source region that is implanted with n-type dopants isolated between an adjoining pair of the non-intersecting STI regions and isolated from a drain region during the implantation. A source contact is located along a row of drain contacts that are coupled to drain regions of a row of memory cells and the source contact is coupled to the source region for providing electrical coupling with a plurality of source lines. The isolating of the implanted source region from the drain region during the implanting enables coupling of the source contact to the source lines while maintaining the n-type dopants between the STI regions and avoiding lateral diffusion to a bit-line.

Abstract: A method and apparatus are provided for determining a next tool state based on fault detection information. The method comprises receiving operational data associated with processing of a workpiece by a processing tool, determining at least a portion of noise associated with the processing of the workpiece based on analyzing the operational data and estimating a next state of the processing tool based on at least the determined portion of the noise.

Abstract: An apparatus for initiating partial transactions in a peripheral interface circuit for an I/O node of a computer system. An apparatus for performing partial transfers on a peripheral bus in response to a request for a stream of data includes a data buffer coupled to a control unit. The data buffer may be configured to store one or more data packets each containing data forming a portion of the data stream. The control unit may be configured to determine the presence of data packets stored in the data buffer that collectively contain a sequence of data forming a portion of the data stream. The control unit may be further configured to cause the sequence of data to be conveyed on the peripheral bus.

Abstract: A peripheral interface circuit for handling graphics responses in an I/O node of a computer system. A peripheral interface circuit includes a buffer circuit coupled to receive packet commands. The buffer circuit includes a plurality of buffers each corresponding to a respective virtual channel of a plurality of virtual channels for storing selected packet commands that belong to the respective virtual channel. The peripheral interface circuit may determine whether a given one of the received packet commands is a graphics response belonging to a particular respective virtual channel. In response to determining that the given packet command is a graphics response belonging to the particular respective virtual channel, the buffer circuit may cause the given packet command to bypass the plurality of buffers.

Abstract: A method for determining a dosimetry of a semiconductor substrate is provided which is accurate, reliable, simple and inexpensive. The present invention is especially useful for determining dosimetry of ultra shallow junctions formed using low energy implantation commonly found in sub−0.25 &mgr;m technologies. In a preferred embodiment, a material layer of a thickness is formed over a semiconductor substrate, followed by an ion implantation of a dopant. The material layer is then analyzed using a chemical method such as vapor phase plasma deposition inductively coupled plasma mass spectroscopy with atomic absorption (VPD-ICPMS-AA) to determine the amount of dopant present in the material layer.

Abstract: In one embodiment, a multistage output buffer supplies current to a load by successively turning ON output buffer circuits which transition from an OFF state to approximately a saturated state during approximately mutually exclusive periods of time. Thus, the aggregate dI/dt of the contributed by the output buffer drivers is primarily associated with a single output buffer driver. Additionally, the respective output driver transition periods are controlled by delay stage impedance to reduce dI/dt. The consecutive activation of the output buffer drivers may be achieved by using respective delay stages to control activation of associated, respective output buffer drivers. Each delay stage receives a delayed output control signal from a previous delay stage, except for the first delay stage which receives a control input signal from a signal source. Each delay stage also delays activation of its own output control signal with delay circuit elements such as relatively HIGH impedance IGFETs.

Abstract: The present invention is directed to a metal oxide semiconductor transistor having a fully overlapped lightly doped drain (LDD) structure which offers the advantages of conventional fully overlapped LDD transistors but which significantly reduces the drain-to-gate overlap capacitance associate therewith. To achieve fully overlapped LDD construction and reduced drain-to-gate overlap capacitance, the metal oxide semiconductor transistor of the present invention employs a gate electrode comprising a main gate region formed from heavily doped polysilicon and depleted sidewall polysilicon spacers formed from undoped or depleted polysilicon. In the MOS transistor of the present invention, the lightly doped regions are fully overlapped by the combination of the depleted sidewall polysilicon spacers and the main gate region.