Abstract: A method for producing growth-axis oriented single crystal sapphire cores or near-net cores is provided. According to the method, a boule is grown on a desired growth axis having a first axial end and a second axial end. An orientation of a plane normal to the desired growth axis with respect to the boule is determined. The boule is then cored in a direction perpendicular to the plane to produce at least one growth-axis oriented single crystal sapphire core, or the boule is outer-diameter-grinded the boule to form a single crystal sapphire near-net core.