Patents Assigned to Advanced Silicon Materials LLC
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Publication number: 20110022197Abstract: A process control application development environment provides an abstraction layer for vendor-independent process control application development. Various features such as validation of high-level representations of process control applications, exception handler agents, structured interactive operation of multiple machines, and multiple device states can be implemented for process control applications.Type: ApplicationFiled: July 26, 2010Publication date: January 27, 2011Applicant: REC Advanced Silicon Materials LLCInventor: Urban Robert Kultgen, II
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Patent number: 6875269Abstract: Methods and apparatuses are useful to add polycrystalline rod material to the crucible of a CZ furnace and thereby increase utilization of crucible volume in the production of large diameter CZ silicon ingots. Multiple silicon rods are melted in the CZ furnace, and the subsequent production of a single crystal silicon ingot can occur without operating the isolation valve or opening the upper chamber of the furnace.Type: GrantFiled: November 13, 2002Date of Patent: April 5, 2005Assignee: Advanced Silicon Materials LLCInventors: Torsten H. Hartmann, Henry Dare Wood
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Patent number: 6835247Abstract: A system is disclosed for efficient utilization of charge replenishment rods in Czochralski silicon crystal growing processes.Type: GrantFiled: October 26, 2001Date of Patent: December 28, 2004Assignee: Advanced Silicon Materials LLCInventors: Henry D. Wood, John Peter Hill, Jay Curtis Nelson, William John Juhasz, Jr., Howard J. Dawson
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Patent number: 6749824Abstract: Disclosed are processes and reactor apparatus for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications. A.C. current, having a fixed or variable high frequency in the range of about 2 kHz to 800 kHz, is provided to concentrate at least 70% of the current in an annular region that is the outer 15% of a growing rod due to the “skin effect.Type: GrantFiled: February 13, 2003Date of Patent: June 15, 2004Assignee: Advanced Silicon Materials LLCInventors: David W. Keck, Ronald O. Russell, Howard J. Dawson
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Patent number: 6676916Abstract: To avoid problems associated with the formation of unwanted cracks and spalls during the growth of a polycrystalline silicon rod, a flaw is induced in a filament on which silicon will be deposited to produce a rod. The flaw causes the grown rod to have a cleavage plane such that the rod will break in a controlled manner at a desired location. The flaw can be placed at a location selected such that breakage at the cleavage plane will produce long rods and thereby improve the yield of the rod growing process. Such a flaw will also have the effect of minimizing useable rod length losses due to spalling.Type: GrantFiled: November 8, 2002Date of Patent: January 13, 2004Assignee: Advanced Silicon Materials LLCInventors: David W. Keck, Edward W. Osborne, Halvor Kamrud
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Publication number: 20030150378Abstract: Polysilicon dendrites are grown by depositing silicon on a polysilicon rod or other substrate. Surface temperature is increased to a temperature at which needle-like dendrites develop due to the deposition of silicon from silicon-containing molecules in the surrounding reactor atmosphere. Thereafter, the surface temperature is gradually reduced so that silicon that deposits on the needle-like dendrites causes the dendrites to grow and assume a generally flared shape.Type: ApplicationFiled: February 13, 2003Publication date: August 14, 2003Applicant: Advanced Silicon Materials LLCInventors: Lyle C. Winterton, John P. Hill
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Publication number: 20030127045Abstract: Disclosed are processes and reactor apparatus for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications. A.C. current, having a fixed or variable high frequency in the range of about 2 kHz to 800 kHz, is provided to concentrate at least 70% of the current in an annular region that is the outer 15% of a growing rod due to the “skin effect.Type: ApplicationFiled: February 13, 2003Publication date: July 10, 2003Applicant: Advanced Silicon Materials LLCInventors: David W. Keck, Ronald O. Russell, Howard J. Dawson
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Publication number: 20030104202Abstract: To avoid problems associated with the formation of unwanted cracks and spalls during the growth of a polycrystalline silicon rod, a flaw is induced in a filament on which silicon will bc deposited to produce a rod. The flaw causes the grown rod to have a cleavage plane such that the rod will break in a controlled manner at a desired location. The flaw can be placed at a location selected such that breakage at the cleavage plane will produce long rods and thereby improve the yield of the rod growing process Such a flaw will also have the effect of minimizing useable rod length losses due to spalling.Type: ApplicationFiled: November 8, 2002Publication date: June 5, 2003Applicant: Advanced Silicon Materials LLCInventors: David W. Keck, Edward W. Osborne, Halvor Kamrud
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Publication number: 20030089302Abstract: Methods and apparatuses are useful to add polycrystalline rod material to the crucible of a CZ furnace and thereby increase utilization of crucible volume in the production of large diameter CZ silicon ingots. Multiple silicon rods are melted in the CZ furnace, and the subsequent production of a single crystal silicon ingot can occur without operating the isolation valve or opening the upper chamber of the furnace.Type: ApplicationFiled: November 13, 2002Publication date: May 15, 2003Applicant: Advanced Silicon Materials LLCInventors: Torsten H. Hartmann, Henry Dare Wood
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Patent number: 6544333Abstract: Disclosed are processes and reactor apparatus for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications. A.C. current, having a fixed or variable high frequency in the range of about 2 kHz to 800 kHz, is provided to concentrate at least 70% of the current in an annular region that is the outer 15% of a growing rod due to the “skin effect.Type: GrantFiled: April 24, 2001Date of Patent: April 8, 2003Assignee: Advanced Silicon Materials LLCInventors: David W. Keck, Ronald O. Russell, Howard J. Dawson
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Publication number: 20020028167Abstract: Phosphine, stilbene, and arsine are removed from silane to ultra-trace levels by passing raw silane gas through a bed of a transition element modified potassium zeolite adsorbent at a temperature above the critical temperature of silane and at a pressure of at least about 150 psi. This purification system can be incorporated into existing silane production plants to augment bulk purification methods. The system also can be located at a site where silane is to be used, to assure that delivered silane gas remains of superior quality.Type: ApplicationFiled: August 6, 2001Publication date: March 7, 2002Applicant: Advanced Silicon Materials LLCInventor: William C. Breneman
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Patent number: 6221155Abstract: Disclosed are processes and reactor apparatus for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications. A.C. current is provided to the rods by a power supply, having a fixed or variable high frequency in the range of about 2 kHz to 800 kHz, to concentrate at least 70% of the current in an annular region that is the outer 15% of a rod due to the “skin effect.Type: GrantFiled: December 15, 1998Date of Patent: April 24, 2001Assignee: Advanced Silicon Materials, LLCInventors: David W. Keck, Ronald O. Russell, Howard J. Dawson