Abstract: A beam expander for providing coupling between a semiconductor optical device and an optical fiber comprises a double layer structure that may be integrated with the optical device. The first, underlying layer of the expander comprises a relatively high refractive index material (e.g., 3.34), thus providing improved coupling efficiency between the optical device and the fiber. The second, covering layer of the expander comprises a relatively low refractive index material (e.g., 3.28), for providing the large mode size desired at the fiber input. The parameters of each layer can be adjusted independently, allowing for the two criteria (coupling efficiency and mode size) to be separately optimized.

Abstract: A laser module wherein a platform supports an optical fiber component having a cantilever portion. The cantilever portion has a length sufficient to provide alignment of the optical fiber component with a laser. Alignment may be, for example, in an X-direction, Y-direction, or both. The platform may be housed in a compliant case. Also disclosed is a method of monitoring the coupling efficiency between, and the alignment of, the laser and optical fiber component.

Abstract: Disclosed is a laser module case having a snout disposed within a wall of the case, wherein the snout may allow alignment of a laser with an optical fiber after closure of the case. The snout has an inner end, outer end and longitudinal hollow. An optical fiber assembly, also with an inner end, outer end and longitudinal hollow, is disposed within the snout hollow. An inner flange secures the snout to the optical fiber assembly at their inner ends and an outer flange secures the snout to the optical fiber assembly at their outer ends. The optical fiber assembly is of a smaller cross-sectional diameter than the snout hollow so that it may move in an X and Y-direction. The optical fiber assembly may be aligned with a laser positioned within the case after the case is closed. The aligned fiber assembly may then be secured in position by the outer flange.

Abstract: A laser support structure and method of mounting a laser in a module. The laser support structure is used in a laser module to support a laser in alignment with an optical fiber. The support structure comprises a frame having a base portion, and a mounting portion opposed to the base portion with a space therebetween. A dielectric layer to which the laser may be attached is suspended from the mounting portion and extends partially into the space between the mounting portion and the base portion. As the dielectric layer expands or contracts, it does so within the space between the mounting portion and the base portion with minimal displacement of the laser.

Abstract: The present invention provides an improved optoelectronic device and a method of manufacture therefor. The optoelectronic device includes a doped buffer layer located over a substrate having an optical window formed therein and an absorber layer located over the doped buffer layer. The optoelectronic device further includes a doped region located over the absorber layer and having a dopant tail that extends substantially through the absorber layer, and the doped buffer layer and the dopant tail are doped to augment an optical power threshold for bandwidth collapse of the optoelectronic device.

Abstract: An integrated semiconductor device is formed from two fabricated semiconductor devices each having a substrate by placing an etch-resist on the substrate of the one semiconductor device, by bonding the conductors of one of the fabricated semiconductor devices to the conductors of the other fabricated semiconductor device, flowing an uncured cement (e.g. epoxy) between the etch-resist and the other substrate, allowing the cement to solidify, and removing the substrate from the one of the semiconductor devices. More specifically, a hybrid semiconductor device is formed from a GaAs/AlGaAs multiple quantum well modulator having a substrate and an IC chip having a substrate by placing an etch resist on the modulator substrate, bonding the conductors of the modulator to the conductors of the chip, wicking an uncured epoxy between the modulators and the chip, allowing the epoxy to cure, and removing the substrate from the modulator.

Abstract: The invention relates to dielectric materials comprising films of R—Ge—Ti—O where R is selected from Zr and Hf, and to methods of making the same. The dielectric material preferably has the formula Rx—Gey—Tiz—Ow where 0.05≧x≦1, 0.05≧y≦1, 0.1≧z≦1, and 1≧w≦2, and x+y+z≅1, and more preferably, where 0.15≧x≦0.7, 0.05≧y≦0.3, 0.25≧z≦0.7, and 1.95≧w≦2.05, and x+y+z≅1. The invention is particularly useful in silicon-chip integrated circuit devices including a capacitor of a dynamic random access memory (DRAM) device.

Abstract: An optical system is provided with an optical assembly and a wavelength division multiplexer surface for transmitting a light beam. The optimal alignment of these light beams is accomplished by adjusting a steering device, which includes an optical wedge or a universal coupling, until the light path of the transmitted light beam through the optical assembly aligns with the light path of the transmitted light beam through the wavelength division multiplexing surface.

Abstract: The present invention provides an optoelectronic device and a method of manufacture therefor. The optoelectronic device includes an optical active layer formed over a substrate and an active region formed in the optical active layer. The optoelectronic device further includes a P-contact and an N-contact formed over a same side of the substrate and associated with the active region.

Abstract: The present invention is directed to a planar optical waveguide comprising a waveguide core layer interposed between upper and lower cladding layers, characterized in that a so-called “effective” coefficient of thermal expansion of the layer containing the waveguide core is approximately the same as that of the substrate supporting the optical waveguide.

Abstract: In accordance with the invention, magnetostrictive saw devices are provided with tunable transducer structures for enhanced performance. The transducers are in the form of patterned conductors disposed between magnetic films. The magnetostrictive response is tuned by adjusting the thickness of magnetic film overlying the conductive layer.

Abstract: A new method and apparatus provide efficient highly non-degenerate four-wave mixing (FWM) signal in a semiconductor quantum well microcavity device. The phase mismatch between beam incidence angle and microcavity resonance frequency is minimized by using obliquely incident pump and probe beams. The FWM device is used to implement a wavelength multiplexer, a demultiplexer, a packet wavelength multiplexer, a packet demultiplexer, a time division multiplexer, a time division demultiplexer, a wavelength converter, and a wavelength switch.

Abstract: An optical add-drop multiplexer (ADM) 60 avoids waveguide crossings by being constructed in the form of a Mach-Zehnder interferometer having a demultiplexer/multiplexer (demux/mux) pair 300, 400 in each of its arms. Each demux/mux pair is interconnected by coherent connecting paths 70, 80 having heating elements 65, 66 for increasing the path length of selected connecting paths. Waveguide optical couplers 61, 62 having asymmetric transfer functions are used at the input and output of the ADM. These couplers cooperate with the activated heating elements to add and/or delete a selected optical channel to/from an optical transmission path. Each coherent connecting path includes a number of waveguides. The end-to-end transmission characteristic of the ADM through each individual waveguide has a Gaussian shape. These Gaussian shapes are designed intersect at their −3 dB wavelengths so that the end-to-end transmission characteristic of the ADM is flat.

Abstract: The invention is a mechanically or electro-mechanically driven phase shifter for radio frequencies. It is a device for phase shifting a signal propagating through a transmission line by moving a conductive construct between an active line and a ground plane of the transmission line. The conductive construct capacitively couples with either the active line and/or the ground plane, forming a capacitive shunt that reflects a significant part of the signal. The remaining portion of the signal is reflected at a terminated end of the transmission line, resulting in substantially no signal loss. The reflectance of the conductive constructs is determined by its capacitance to active line and ground, by its length, and by the step in the field-distribution at the interface between air-suspended and sledge-suspended sections.

Abstract: This invention is predicated on applicant's discovery that the conventional polymer coatings are often too thin to prevent buckling and subsequent bending of optical interconnection fiber, and that this buckling and the consequent induced bending can be eliminated by increasing the thickness of the fiber polymer coating. Applicant has further discovered that a thicker coating that might be insufficient to prevent buckling, reduces stress should buckling occur, thereby improving the reliability and quality of the waveguide. The optimal (minimum) polymer thickness for buckling prevention can be calculated in terms of the properties of the fiber and tube materials and the thermal history of the device. Increased thicknesses less than this optimal thickness can nonetheless reduce stress should buckling occur.

Abstract: A multifrequency laser that uses a waveguide grating router as the filter for frequency control and encloses it within a structure that forms at each selected frequency two paths of slightly different lengths to create a DiDomenico-type of laser that uses a pair of coupled cavities for frequency control. In one embodiment two sets, each of N optical amplifications, are used to create two resonant paths at each frequency. In other embodiments, a portion of the output power is made to travel a second path to provide the second optical path.

Abstract: A multi-wavelength etalon suitable for tuning and maintaining the operating frequency of a laser used in an optical communication system is disclosed. The communication system has a representative channel wavelength and a channel spacing. The etalon has a plurality of steps on one of the sides with a step size that is a fraction of the channel spacing. The nominal thickness of the etalon is chosen so that a transmission peak occurs at a wavelength substantially equal to the representative channel wavelength and a next peak occurs at the wavelength of an adjacent channel. The step size is a fraction of the channel separation and is substantially optimized so that a peak or trough in the transmission curve in the region of one step overlaps a steep portion of the transmission curve for one or more other steps.

Abstract: In accordance with the invention, magnetostrictive saw devices are provided with improved transducer structures for enhanced performance. In one improved device, the transducers are in the form of gratings with interconnected ends for reduced resistance and inductance. In another embodiment, the transducers are shaped to provide apodization. In yet a third embodiment, transducer performance is enhanced by patterning composite structures.

Abstract: A self-aligned 1×N fiber optic switch uses silicon optical bench technology to provide the alignment between the single fiber and the “selected” one-out-of-N fibers. A first substrate stack is used to support the single fiber, using a via etched through the thickness of the stack, and includes alignment fiducials formed on the top surface thereof. A second substrate stack is used to similarly support an array of N fibers, the array disposed in a circular arrangement with respect to the top surface of the second substrate stack. A set of alignment fiducials is also formed on the top surface of the second substrate stack. One alignment feature includes a “centering” fiducial to allow for the two stacks to be properly aligned. Another alignment fiducial includes a circular channel, having a diameter greater than that of a fiber array, and allowing for alignment sphere to “rest” in the channel when the substrate stacks are mated.

Abstract: The invention is an optical device and method of fabrication which mitigates the problem of Zn migration in the cladding and waveguide regions. The contact region includes carbon, which acts as a p-type dopant in ternary semiconductor material. The contact layer is made of InGaAs or InGaAsP, and the invention is most advantageously used in an electroabsorption modulated laser or capped mesa buried heterostructure laser.