Abstract: Disclosed is a process for producing p-type doped layers, in particular, in II-VI semiconductors, in which the p-type doped layer is produced in a CVD-step by means of plasma activation of nitrogenated gases.

Abstract: A gas inlet for different reactant gases which flow into reaction vessels with high flow velocity. The cross sections of the gas inlet supply lines are substantially smaller than that of the reaction vessel.The gas inlet has a part with a conicoidal interior contour, the cross section of which is adapted to the cross section of the reaction vessel and which is arranged at one end of the reaction vessel through which flow occurs. The individual supply lines end at approximately the focal point of the part having the conicoidal interior contour. The gas exit openings of the supply lines are directed at the vertex of the part having the conicoidal interior contour.

Abstract: Disclosed is a process for fabricating mixed crystals and, in particular, III-V semiconductors, in which at least one component of the composition of the mixed crystal is transferred in a reactor from a source into a vapor phase containing hydrogen and chloride compounds as well as a carrier gas and mixed with said component or other components of said composition of said mixed crystal, transported to a substrate and precipitated on said substrate. The invented process is distinguished in that in order to vary the growth rate between approximately 1 <m/h and approximately 500 <m/h, the overall pressure is varied between approximately 80 mbar and approximately 1 mbar.

Abstract: A multiplicity of thin layers are applied on top of each other having alternately comparatively high concentrations of charge carriers and no doping. The thickness and the concentration of charge carriers of the individual layers being are proportioned in such a manner that the desired low concentration of charge carriers is yielded by averaging the multiplicity of layers.

Abstract: A reactor for MOCVD systems, having a reaction vessel through which the reacting gas or gases flow and in which the substrates are arranged in such a manner that a main surface is approximately parallel to the flow direction. The reaction vessel is made of quartz-glass and has, at least in the region in which the reacting gas flows, a rectangular cross-section. A flange element is provided at the gas-entrance-side end of the reaction vessel, while a protective tube surrounds the reaction vessel. The protective tube is provided with a face-end reactant gas inlet connected with a flange element to which the flange element of the reaction vessel can be flanged. The protective tube has a protective gas inlet in its superficies, which permits purging the space between the reaction vessel and the protective tube, and a reactant gas outlet. The reactant gases are deflected in the reaction vessel and exit through the superficies of the reaction vessel.