Patents Assigned to Alphasil Incorporated
  • Patent number: 4736229
    Abstract: An improved method of manufacturing active matrix display backplanes with thin film transistors thereon and a drive scheme therefor. A refractory metal covers the indium tin oxide (ITO) layer, patterned to form a gate electrode for the transistors and to protect the pixel pad ITO during formation of the transistors. To reduce shorts and capacitance between the gate and the source or the drain, an intermetal dielectric is patterned to form a central portion over a planar portion of the gate region and to cover any exposed gate edges.
    Type: Grant
    Filed: May 11, 1983
    Date of Patent: April 5, 1988
    Assignee: Alphasil Incorporated
    Inventors: Scott H. Holmberg, Richard A. Flasck
  • Patent number: 4545112
    Abstract: An improved method of manufacturing thin film transistors. A gate metal is patterned to form a gate electrode and a drain, gate and source contact pad for the transistor. To reduce shorts and capacitance between the gate and the source or the drain, an intermetal dielectric is patterned to form a central portion over a planar portion of the gate region and to cover any exposed gate edges.
    Type: Grant
    Filed: August 15, 1983
    Date of Patent: October 8, 1985
    Assignee: Alphasil Incorporated
    Inventors: Scott H. Holmberg, Richard A. Flasck