Abstract: In one example, a semiconductor device structure relates to an electronic device, which includes a device top surface, a device bottom surface opposite to the device top surface, device side surfaces extending between the device top surface and the device bottom surface, and pads disposed over the device top surface. Interconnects are connected to the pads, and the interconnects first regions that each extend from a respective pad in in an upward direction, and second regions each connected to a respective first region, wherein each second region extends from the respective first region in a lateral direction. The interconnects comprise a redistribution pattern on the pads. Other examples and related methods are also disclosed herein.

Abstract: In one example, a semiconductor device, comprises a substrate having a top side and a conductor on the top side of the substrate, an electronic device on the top side of the substrate connected to the conductor on the top side of the substrate via an internal interconnect, a lid covering a top side of the electronic device, and a thermal material between the top side of the electronic device and the lid, wherein the lid has a through-hole. Other examples and related methods are also disclosed herein.

Abstract: In one example, an electronic device includes a semiconductor sensor device having a cavity extending partially inward from one surface to provide a diaphragm adjacent an opposite surface. A barrier is disposed adjacent to the one surface and extends across the cavity, the barrier has membrane with a barrier body and first barrier strands bounded by the barrier body to define first through-holes. The electronic device further comprises one or more of a protrusion pattern disposed adjacent to the barrier structure, which can include a plurality of protrusion portions separated by a plurality of recess portions; one or more conformal membrane layers disposed over the first barrier strands; or second barrier strands disposed on and at least partially overlapping the first barrier strands. The second barrier strands define second through-holes laterally offset from the first through-holes. Other examples and related methods are also disclosed herein.

Abstract: In one example, an electronic device structure includes a substrate having a conductive structure adjacent to a surface. The conductive structure can include a plurality of conductive pads. First and second electronic devices are disposed adjacent to the top surface. The first electronic device is interposed between a first conductive pad and a second conductive pad, and the second electronic device is interposed between the second conductive pad and a third conductive pad.

Abstract: In one example, a semiconductor package comprises a substrate having a top surface and a bottom surface, an electronic device mounted on the top surface of the substrate and coupled to one or more interconnects on the bottom surface of the substrate, a cover over the electronic device, a casing around a periphery of the cover, and an encapsulant between the cover and the casing and the substrate.

Abstract: A semiconductor chip testing apparatus is disclosed. The semiconductor chip testing apparatus includes: an upper socket unit which is formed therein with a receiving space receiving an upper semiconductor chip, holds a lower semiconductor chip using a suction airflow passing around the upper semiconductor chip in the receiving space, and electrically connects the lower semiconductor chip to the upper semiconductor chip; a blade block coupled to the upper socket unit to deliver a vacuum pressure for generating the suction airflow in the receiving space; and a lower socket unit on which the lower semiconductor chip held by the upper socket unit is seated, and which is electrically connected to the seated lower semiconductor chip.

Abstract: The method of fabricating a semiconductor device may include forming a semiconductor die on a substrate, forming an interposer including at least one integrated circuit connected to the semiconductor die on the substrate or on the semiconductor die, and performing encapsulation to surround the semiconductor die and the interposer.

Abstract: A stackable wafer level package and a fabricating method thereof are disclosed. In the stackable wafer level package, bond pads (or redistribution layers) are arranged on a bottom semiconductor die, and metal pillars are formed on some of the bond pads positioned around the edges of the bottom semiconductor die. A top semiconductor die is electrically connected to the other bond pads, on which the metal pillars are not formed, positioned around the center of the bottom semiconductor die through conductive bumps. The metal pillars and the top semiconductor die are encapsulated by an encapsulant. A plurality of interconnection patterns electrically connected to the metal pillars are formed on the surface of the encapsulant. Solder balls are attached to the interconnection patterns. Due to this stack structure, the wafer level package is reduced in thickness and footprint. Therefore, the wafer level package is highly suitable for mobile applications.

Abstract: The method of fabricating a semiconductor device may include forming a semiconductor die on a substrate, forming an interposer including at least one integrated circuit connected to the semiconductor die on the substrate or on the semiconductor die, and performing encapsulation to surround the semiconductor die and the interposer.

Abstract: A semiconductor device and a method of fabricating the same. An interposer used for the semiconductor device includes integrated circuits therein to realize the functions of a decoupling capacitor, an ESD preventing circuit, an impedance matching circuit, and termination. The semiconductor device may include a semiconductor die with a through silicon via (TSV) structure having two or more through electrodes that pass through the semiconductor die, in which each of the through electrodes are connected to a respective bond pad of the semiconductor die.

Abstract: A semiconductor device and a method of fabricating the same are disclosed. An interposer used for the semiconductor device includes integrated circuits therein to realize the functions of a decoupling capacitor, an ESD preventing circuit, an impedance matching circuit, and termination. Therefore, it is possible to improve the reliability of the operation of the semiconductor device.

Abstract: A circuit board for semiconductor package is designed to provide a complete grounding with corresponding equipment in the manufacture of the semiconductor package based on a circuit board, thereby preventing a breakdown of the circuit board or semiconductor chip caused by electrostatic charges.