Abstract: A transistor arrangement comprising an electrically conductive substrate; a semiconductor body including a transistor structure, the transistor structure including a source terminal connected to said substrate; a bond pad providing a connection to the transistor structure configured to receive a bond wire; wherein the semiconductor body includes an RF-return current path for carrying return current associated with said bond wire, said RF-return current path comprising a strip of metal arranged on said body, said strip configured such that it extends beneath said bond pad and is connected to said source terminal of the transistor structure.

Abstract: An RF package including: an RF circuit; a non-gaseous dielectric material coupled to the RF circuit, and having a thickness based on a magnetic field in the RF circuit; and an encapsulant material coupled to cover the RF circuit and non-gaseous dielectric material on at least one side of the RF circuit. A package manufacturing method, including: identifying an RF circuit; dispensing a non-gaseous dielectric material upon the RF circuit, wherein at least a portion of the non-gaseous dielectric material has a thickness based on a magnetic field in the RF circuit; and covering the RF circuit and non-gaseous dielectric material with an encapsulant material on at least one side of the RF circuit.

Abstract: An RF power device that includes a transistor with a compact impedance transformation circuit, where the transformation circuit includes a lumped element CLC analog transmission line and an associated embedded directional bilateral RF power sensor that is inductively coupled to the transmission line to provide detection of direct and reflected power independently with high directivity.

Abstract: There is described a dual-band semiconductor RF amplifier device. The device comprises (a) a transistor (205) having an output capacitance (CO), (b) a first shunt element (210) arranged in parallel with the output capacitance, the first shunt element comprising a first shunt inductor (L1) connected in series with a first shunt capacitor (C1), and (c) a second shunt element (220) arranged in parallel with the first shunt capacitor, the second shunt element comprising a second shunt inductor (L2) connected in series with a second shunt capacitor (C2), wherein the capacitance of the second shunt capacitor (C2) is at least two times the capacitance of the first shunt capacitor (C1). Furthermore, there is described a method of manufacturing a dual-band semiconductor RF amplifier device and a dual-band RF amplifier comprising a plurality of such amplifier devices.

Abstract: Lumped-element based class-E Chireix combiners are disclosed that are equivalents of a quarter-wave transmission line combiner. The proposed class-E equivalent power amplifier circuits that are used can be derived from a parallel tuned class-E implementation. The proposed low-pass equivalents can behave similarly in terms of class-E performance, but absorb the 90 degree transmission line.

Abstract: In RF power transistors, the current distribution along edges of the transistor die may be uneven leading to a loss in efficiency and in the output power obtained, resulting in degradation in performance. When multiple parallel dies are placed in a package, distribution effects along the vertical dimension of the dies are more pronounced. A RF power device (600) for amplifying RF signals is disclosed which modifies the impedance of a portion of the respective one of the input lead and the output lead and redistributes the current flow at an edge of the transistor die.

Abstract: A transistor arrangement comprising an electrically conductive substrate; a semiconductor body including a transistor structure, the transistor structure including a source terminal connected to said substrate; a bond pad providing a connection to the transistor structure configured to receive a bond wire; wherein the semiconductor body includes an RF-return current path for carrying return current associated with said bond wire, said RF-return current path comprising a strip of metal arranged on said body, said strip configured such that it extends beneath said bond pad and is connected to said source terminal of the transistor structure.

Abstract: A Doherty amplifier is disclosed, being adapted to receive an RF input signal and to output an RF output signal and comprising a main amplifier and a peak amplifier, each comprising: a first amplifier (T1, T1?) and a second amplifier (T2, T2?), each amplifier having a respective input terminal and a respective output terminal, the first amplifier and the second amplifier being adapted to amplify a respective input signal derived from the RF input signal and received at the respective input terminal and to deliver a first output signal and a second output signal, respectively; a first phase shifter (14, 14?) and a second phase shifter (15, 15?) coupled to the output terminal of the first amplifier and to the output terminal of the second amplifier, respectively; a third phase shifter (16, 16?); and a fourth phase shifter (17, 17?); wherein the Doherty amplifier further comprises a first combining node (A) and a second combining node (B) and, wherein each third phase shifter is coupled between the respective fi

Abstract: A die comprising a body of semiconductor material, said body configured to receive a solder layer of gold containing alloy for use in die bonding said die to a substrate, wherein the die includes an interface layer on a surface of the body for receiving the solder layer, the interface layer having a plurality of sub-layers of different metals.

Abstract: An electronic circuit has a multi-way Doherty amplifier. The multi-way Doherty amplifier comprises a two-way Doherty amplifier with a main stage and a first peak stage that are integrated in a semiconductor device; and at least one further peak stage implemented with a discrete power transistor.