Abstract: The optical sensor package comprises an optical sensor device with a sensor element arranged inside a housing comprising a cap. A diffuser is arranged in an aperture of the cap opposite the sensor element and prolongs the cap in the aperture or closes the aperture. The method comprises forming a cap with an aperture, arranging a diffusing material in the aperture, thus forming a diffuser, and after forming the diffuser, arranging an optical sensor device with a sensor element inside a housing that includes the cap, such that the sensor element is opposite the diffuser.

Abstract: The semiconductor photodetector device comprises a substrate of semiconductor material of a first type of electric conductivity, an epitaxial layer of an opposite second type of electric conductivity, a further epitaxial layer of the first type of electric conductivity and photodetectors. The epitaxial layer functions as a shielding layer for charge carriers (e?, h+ generated by radiation that is incident from a rear side opposite the photodetectors.

Abstract: A memory arrangement comprises a non-volatile memory plane (2), a replacement plane (3), an address select block (302), and a counter arrangement (300) having at least one counter (310 to 312). The at least one counter (310 to 312) is configured to be incremented at a write cycle of the memory arrangement (1). The address select block (302) is configured to switch from the non-volatile memory plane (2) to the replacement plane (3), if a counter value of the at least one counter (310 to 312) is higher than a predetermined limit.

Abstract: A method for manufacturing a semiconductor device comprises the steps of providing a semiconductor body with a main plane of extension, and forming a trench in the semiconductor body from a top side of the semiconductor body in a vertical direction which is perpendicular to the main plane of extension of the semiconductor body. The method further comprises the steps of coating inner walls of the trench with an isolation layer, depositing a metallization layer within the trench, and depositing a passivation layer within the trench such that an inner volume of the trench is free of any material, wherein inner surfaces that are adjacent to the inner volume are treated to be hydrophobic at least in places. Furthermore, a semiconductor device is provided.

Abstract: A sensor arrangement has a current mirror structure that is configured to provide respective base currents at each of a plurality of output current paths based on an input current. For each of the output current paths, a respective adjustment current source is provided that is digitally controllable and is connected to the respective output current path for adjusting the base current of said output current path. For each of the output current paths, a current biased sensor element is coupled in said output current path. The sensor arrangement further has a selection element for selectively connecting one of the output current paths to an evaluation block based on a selection signal. The evaluation block is configured to generate a sensing value corresponding to a resulting current in the connected output current path, to compare the sensing value with an average value, and to update the average value based on the sensing value.

Abstract: A semiconductor device comprises a semiconductor body and an electrically conductive via which extends through at least a part of the semiconductor body, where the via has a lateral size which is given in a first lateral direction that is perpendicular to a vertical direction given by the main axis of extension of the via and where the via has a top side and a bottom side that faces away from the top side. The semiconductor device further comprises an electrically conductive etch-stop layer arranged at the bottom side of the via in a plane which is parallel to the first lateral direction, and at least one electrically conductive contact layer at the bottom side of the via in a plane which is parallel to the first lateral direction. The lateral extent in the first lateral direction of the etch-stop layer is larger than the lateral size of the via and the lateral extent in the first lateral direction of the contact layer is smaller than the lateral size of the via.

Abstract: A sensor arrangement to sense an external signal comprises a sensor (100) and a charge generator (200) to generate a compensation current (Ic) to compensate the sensor current. A charge generator (200) comprises a first transistor (210) having a parasitic capacitor (212) and a first conductive path. The charge generator (200) comprises a second transistor (220) having a second conductive path being coupled in series to the first transistor (210) and coupled to the output node (O200) of the charge generator (200). The control circuit (600) is configured to control the conductivity of the respective first and second conductive path of the first and the second transistor (210, 220) of the charge generator (200) so that the sensor current is compensated by the compensation current (Ic).

Abstract: A method for light sensing senses the light during a sub-frame of a picture frame operated display. The sensing is performed during an adaptive observation window which is determined in dependence on the duty cycle of the operation of the display. A calculation that uses the light sensed during the observation window and the light sensed during the sub-frame delivers a value indicative of the amount of received ambient light.

Abstract: A method is proposed for sensing light being incident on an electronic device. The electronic device comprises a display and a light sensor arrangement which is mounted behind the display such as to receive incident light through the display. The method comprises the step of repeatedly switching the display on and off depending on a modulation signal, wherein a sub-frame is defined by an on-state and a consecutive off-state of the display. The modulation signal depends on at least one modulation parameter. In a first sub-frame a display brightness is set to a first level depending on a first value of the at least one modulation parameter. Then a first frame count is determined by integrating the incident light by means of the light sensor arrangement during the first sub-frame. In a second sub-frame the display brightness is set to a second level depending on a second value of the at least one modulation parameter.

Abstract: The optical sensor package comprises an optical sensor device with a sensor element arranged inside a housing comprising a cap. A diffuser is arranged in an aperture of the cap opposite the sensor element and prolongs the cap in the aperture or closes the aperture. The method comprises forming a cap with an aperture, arranging a diffusing material in the aperture, thus forming a diffuser, and after forming the diffuser, arranging an optical sensor device with a sensor element inside a housing that includes the cap, such that the sensor element is opposite the diffuser.

Abstract: An oscillator circuit arrangement comprises a gain stage and a feedback loop that includes a crystal device. A clock signal monitor circuit is connected to an output of the gain stage and detects a frequency shift in the clock signal or a loss of oscillation. The current through the gain stage is controlled in response to a control signal generated by the clock signal monitor circuit.

Abstract: The semiconductor device for detection of radiation comprises a semiconductor substrate (1) with a main surface (11), a dielectric layer (6) comprising at least one compound of a semiconductor material, an integrated circuit (2) including at least one component sensitive to radiation (3), a wiring (4) of the integrated circuit embedded in an intermetal layer (8) of the dielectric layer (6), an electrically conductive through-substrate via (5) contacting the wiring, and an optical filter element (7) arranged immediately on the dielectric layer above the component sensitive to radiation. The dielectric layer comprises a passivation layer (9) at least above the through-substrate via, the passivation layer comprises a dielectric material that is different from the intermetal layer (8), and the wiring is arranged between the main surface and the passivation layer.

Abstract: A relaxation oscillator with an aging effect reduction technique comprises a comparator (CP) coupled with its input side (CP1, CP2) to a network comprising at least one capacitor (C, C1, C2), a plurality of transistors (M1, M2, M3, M4) and a plurality of controllable switches (SW11, . . . , SW8, SW111, . . . , SW180). The relaxation oscillator uses a switching method such that the roles of current/voltage generator's transistor and current mirror transistor are periodically swapping by the output signal of the relaxation oscillator. Reducing mismatch of operating points between current/voltage generator and current minor transistors achieves a decrease of frequency degradation caused by aging effect.

Abstract: A circuit arrangement comprises a first input node, a first output node, a sampling capacitor means and a first switching means being switchable between a first switching state and a second switching state. The first switching means is coupled to the sampling capacitor means, the first input node and the first output node in such a way that the sampling capacitor means is conductively connected to the first input node and disconnected from the first output node in the first switching state and the sampling capacitor means is disconnected from the first input node and conductively connected to the first output node in the second switching state. A first charge-storing element is coupled via a second switching means to the first input node in such a way that the charge-storing element is charged in the first switching state and discharged in the second switching state, thereby at least partly compensating current flow for charging the sampling capacitor means in the first switching state.

Abstract: A single photon avalanche diode, SPAD, comprises an active area which is arranged to generate a photon triggered avalanche current. A cover is arranged on or above the active area. The cover shields the active area from incident photons. The cover comprises a stack of at least the first and a second metal layer. At least one of the metal layers, e.g. the first metal layer, comprises an aperture. The metal layers are arranged in the stack with respect to an optical axis such as to open an effective aperture along the optical axis. By way of the effective aperture a portion of the active area is exposed to incident photons being incident along the optical axis. The effective aperture is smaller than the aperture arranged in the first metal layer.

Abstract: A rotary sensor arrangement is configured to be used with a rotatable magnetic source and comprises a first and a second pair of magnetic field sensors, each pair arranged symmetrically with respect to rotation axes and providing respective sensor values. An evaluation unit determines a first sum value corresponding to a sum of the sensor values of the first pair, and a second sum value corresponding to a sum of the sensor values of the second pair. The evaluation unit further determines a difference value corresponding to a difference between the first and the second sum value and compares the difference value or a value derived thereof to a threshold value. Based on the comparison result, it is determined whether a failure status of the sensor arrangement is present.

Abstract: An oscillator circuit arrangement comprises an inverter having input and output terminals that are to be connected to a crystal device. An automatic gain control device controls a current source that supplies current to the inverter. First and second diode devices having different orientation are connected between the input and the output of the inverter. The oscillator consumes low power and has a fast recovery time after an electromagnetic interference event. The oscillator can be used in electronic labels.

Abstract: The proposed concept relates to an optical sensor arrangement comprising an optical sensor with an integrated circuit arranged in or on a substrate. The substrate comprises at least a first surface area and a second surface area. At least one optically active sensor component is arranged on or in the substrate of the first surface area. The optically active sensor component is arranged for emitting and/or detecting light of a desired wavelength range. Optically inactive sensor circuitry is arranged on or in the substrate of the second surface area. A display panel comprises an active display area and a non-active display area, wherein the non-active display area comprises a material which is optically transparent in the desired wavelength range and wherein the non-active display area at least partly frames the active display layer.

Abstract: A body impedance analysis, BIA, system comprising a host and an accessory device connectable to the host device via a data cable. A first and a second electrode are arranged on an outside of the accessory device and a third and a fourth electrode are arranged on an outside of the host device. A BIA circuitry is connected to the third and the fourth electrode and connectable to the first and the second electrode via the data cable. The BIA circuitry is configured to drive an alternating current through the body via the first and the third electrode, to sense a voltage indicative of a body impedance via the second and the fourth electrode and to determine the body impedance depending on the sensed voltage.

Abstract: An optical device (306) includes an internal cavity and an emitter (102) disposed in the internal cavity (210). The emitter is operable to emit a first light wave (220). The optical device also includes a detector (104) disposed in the internal cavity. The detector is operable to detect a second light wave (225) that is based on the first light wave. The second light wave is susceptible to being coupled with an undesired light wave (235) that is based on the first light wave. The optical device further includes an interference filter (310) disposed on the detector. The interference filter has a filter property that causes the interference filter to attenuate the interfering light wave.