Abstract: Optical sensor module (54) for detection of ambient light behind an OLED display (2), comprising a first optical sensor (56) and a second optical sensor (58), whereby the first optical sensor (56) is preceded by a polarizer (70).

Abstract: An image sensor, comprises a three-dimensional integrated circuit comprising a stack with at least a top-, a middle-, and a bottom-tier. The bottom-tier (BTR) comprises a first array of photodetectors, denoted first pixels (PD1), and the first pixels being sensitive in the visual and/or near-infrared spectral range. The middle-tier (MTR) comprises a second array of photodetectors, denoted second pixels (PD2), and the second pixels being sensitive in the short-wave infrared spectral range. The top-tier (TTR) comprises an application-specific integrated circuit, denoted ASIC, operable to read out the arrays of the first and second photodiodes (PD1, PD2).

Abstract: In an embodiment a pixel arrangement includes at least one photodiode configured to convert electromagnetic radiation into a respective charge signal, a transfer gate between the photodiode and a capacitance for transferring the respective charge signal to the capacitance, a reset gate electrically coupled to the capacitance, the reset gate configured to reset the capacitance, an amplifier electrically connected to the capacitance and configured to generate, based on the respective charge signal and on a sensitivity mode, a respective amplified signal being a low sensitivity signal or a high sensitivity signal, respectively, wherein the low sensitivity signal and the high sensitivity signal are based on a common noise level, a first capacitor configured to store the high sensitivity signal, a second capacitor configured to store the low sensitivity signal, a first switch between an output terminal of the amplifier and the first capacitor and a second switch between the output terminal of the amplifier and the

Abstract: A pixel arrangement comprises a photodiode, a circuit node, a transfer transistor coupled to the photodiode and to the circuit node, an amplifier with an input coupled to the circuit node, a first and a second capacitor, a first transistor coupled to an output of the amplifier and to the first capacitor, a second transistor coupled to the first transistor and to the second capacitor, and a coupling transistor coupled to the circuit node and to the second capacitor.

Abstract: A pixel arrangement comprises a photodiode, a circuit node, a transfer transistor coupled to the photodiode and to the circuit node, an amplifier with an input coupled to the circuit node, a first and a second capacitor, a first transistor coupled to an output of the amplifier and to the first capacitor, a second transistor coupled to the first transistor and to the second capacitor, and a coupling transistor coupled to the circuit node and to the second capacitor.

Abstract: An image sensor includes a pixel array including a plurality of pixels each including a photosensitive element, and a readout circuit, wherein the pixels are arranged in at least two columns, within each column at least some of the pixels of the column are connected with a common column bus, respectively, for each column the readout circuit includes a first analog-to-digital converter (ADC) and a second ADC, for each column the first ADC is connected with the column bus, and for each column the second ADC is connectable with at least one of the column bus and a reference potential or the second ADC is connected with one optically shielded pixel of the pixel array.