Abstract: A method for controlling a force acting on a scanning probe of a cantilever by setting bandwidth of a feedback loop constituted by detecting minute displacement of the cantilever and controlling a force of the scanning probe to be greater than a primary resonant frequency of the cantilever.
Type:
Grant
Filed:
February 26, 1999
Date of Patent:
October 2, 2001
Assignees:
Angstrom Technology Partnership, International Business Machines Corporation
Inventors:
Suzanne Philippa Jarvis, Mark Alfred Lantz, Urs Duerig
Abstract: A manganese oxide material has MnO.sub.3 as a matrix. It is an antiferromagnetic insulator and, when subjected to an electrical current or electric field, it is transformed into a ferromagnetic metal.
Type:
Grant
Filed:
June 18, 1999
Date of Patent:
December 26, 2000
Assignees:
Agency of Industrial Science and Technology Ministry of International Trade & Industry, Angstrom Technology Partnership, Sanyo Electric Co., Ltd.
Abstract: A manganese oxide material that can be used as a switching device or as a memory device or the like is formed of Mn-based oxide material. The Mn-based oxide material exhibits insulator-to-metal transitions induced by irradiating the material with laser light.
Type:
Grant
Filed:
March 16, 1998
Date of Patent:
October 24, 2000
Assignees:
Agency of Industrial Science and Technology Ministry of International Trade and Industry, Angstrom Technology Partnership
Abstract: A magnetoresistor with an ordered double perovskite structure is an oxide crystal which has an ordered double perovskite crystal structure represented by the general formula of A.sub.2 BB'O.sub.6, wherein A stands for Sr atoms, B for Fe atoms and B' for Mo or Re atoms and wherein the Fe atoms and the Mo or Re atoms are alternately arranged and which exhibits negative magnetoresistive characteristics.
Type:
Grant
Filed:
March 26, 1999
Date of Patent:
October 24, 2000
Assignees:
Agency of Industrial Science and Technology, Ministry of International Trade and Industry, Mitsubishi Electric Corporation, Angstrom Technology Partnership
Abstract: The present invention provides a method for selectively allowing film-forming molecules to be chemically adsorbed onto an Si substrate to produce a good and robust organic monomolecular film, wherein molecules with SH groups are chemically adsorbed onto the Si substrate to form a monomolecular film of the molecules by heating an As molecular beam source 4 to allow a monoatomic layer thickness of arsenic to be adsorbed onto the clean surface of the Si substrate set on a sample stage 3 and then immersing the Si substrate terminated by arsenic in a solution containing molecules with SH groups.
Type:
Grant
Filed:
October 18, 1996
Date of Patent:
August 24, 1999
Assignees:
Agency of Industrial Science and Technology, Angstrom Technology Partnership, Sharp Corporation
Abstract: Proposed is a grain boundary-free crystalline body of a perovskite structure having a chemical composition of the formula Pr.sub.1-x M.sub.x MnO.sub.3, in which M is calcium or strontium and the subscript x is a number of 0.3 to 0.5, which exhibits a magnetoresistance behavior with a phase transition between an insulator phase and a ferromagnetic metallic phase accompanied by the phenomenon of hysteresis. This grain boundary-free crystalline body can be obtained by subjecting a sintered body of a powder blend consisting of the oxides of praseodymium, manganese and calcium or strontium to a crystal growing treatment by the floating zone-melting method in an atmosphere of oxygen.
Type:
Grant
Filed:
November 3, 1995
Date of Patent:
September 9, 1997
Assignees:
Japan as represented by Director General of Agency of Industrial Science and Technology, Angstrom Technology Partnership