Abstract: An oil-in-water type (O/W) emulsion lubricant composition includes safe and renewable components that do not have environmental load, exhibits excellent lubrication properties, has excellent handling capability, is economical, and may be applied to tribological fields. The lubricant composition includes water or oil dispersant-treated ultrafine diamond particles in the aqueous phase (W phase) and/or the oil phase (O phase) of an oil-in-water (O/W) emulsion, or includes at least one multiple emulsion state that includes an oiliness improver and/or a composite state that includes a solid lubricant other than the ultrafine diamond particles in the same configuration.

Abstract: An oil-in-water type (O/W) emulsion lubricant composition includes safe and renewable components that do not have environmental load, exhibits excellent lubrication properties, has excellent handling capability, is economical, and may be applied to tribological fields. The lubricant composition includes water or oil dispersant-treated ultrafine diamond particles in the aqueous phase (W phase) and/or the oil phase (O phase) of an oil-in-water (O/W) emulsion, or includes at least one multiple emulsion state that includes an oiliness improver and/or a composite state that includes a solid lubricant other than the ultrafine diamond particles in the same configuration.

Abstract: A tool for grinding and polishing diamond and a method for polishing diamond in which a single crystal diamond, a diamond thin film, a sintered diamond compact and the like can be polished at low temperatures without causing cracks, fractures or degradation in quality therein. The tool and method provide a polishing operation which is easy to accomplish, provides stable polishing quality, and provides decreased costs while maintaining stable grinder performance. The grinder is formed of a main component which is an intermetallic compound consisting of one kind or more of elements selected from the group of Al, Cr, Mn, Fe, Co, Ni, Cu, Ru, Rh, Pd, Os, Ir and Pt and one kind or more of elements selected from the group of Ti, V, Zr, Nb, Mo, Hf, Ta and W. The diamond polishing method includes pushing the above stated grinder against the diamond, and rotating or moving the grinder relative to the diamond while keeping the portion of the diamond subjected to polishing at room temperature.

Abstract: A tool for grinding and polishing diamond and a method for polishing diamond in which a single crystal diamond, a diamond thin film, a sintered diamond compact and the like can be polished at low temperatures without causing cracks, fractures or degradation in quality therein. The tool and method provide a polishing operation which is easy to accomplish, provides stable polishing quality, and provides decreased costs while maintaining stable grinder performance. The grinder is formed of a main component which is an intermetallic compound consisting of one kind or more of elements selected from the group of Al, Cr, Mn, Fe, Co, Ni, Cu, Ru, Rh, Pd, Os, Ir and Pt and one kind or more of elements selected from the group of Ti, V, Zr, Nb, Mo, Hf, Ta and W. The diamond polishing method includes pushing the above stated grinder against the diamond, and rotating or moving the grinder relative to the diamond while keeping the portion of the diamond subjected to polishing at room temperature.

Abstract: An improved gas phase synthesized diamond, CBN, BCN, or CN thin film having a modified region in which strain, defects, color and the like are reduced and/or eliminated. The thin film can be formed on a substrate or be a free-standing thin film from which the substrate has been removed. The thin film can be stably and reproducibly modified to have an oriented polycrystal structure or a single crystal structure. The thin film is modified by being subjected to and heated by microwave irradiation in a controlled atmosphere. The thin film has a modified region in which a line width of the diamond spectrum evaluated by Raman spectroscopy of 0.1 microns or greater is substantially constant along a film thickness direction of the thin film, and the line width of the modified region is 85% or less of a maximum line width of the residual portion of the film thickness.