Abstract: Embodiments described herein generally relate to a processing chamber having one or more gas inlet ports located at a bottom of the processing chamber. Gas flowing into the processing chamber via the one or more gas inlet ports is directed along a lower side wall of the processing chamber by a plate located over each of the one or more gas inlet ports or by an angled opening of each of the one or more gas inlet ports. The one or more gas inlet ports and the plates may be located at one end of the processing chamber, and the gas flow is directed towards an exhaust port located at the opposite end of the processing chamber by the plates or the angled openings. Thus, more gas can be flowed into the processing chamber without dislodging particles from a lid of the processing chamber.

Abstract: The angular ion distribution in plasma processing is controlled using a bias voltage frequency. In one example, a plasma containing gas ions is generated in a plasma chamber. The plasma sheath is modified using an aperture disposed between the plasma sheath and the workpiece so that the plasma sheath takes a shape above the aperture. An oscillating radio frequency bias voltage is generated and applied to a workpiece holder. The workpiece holder applies the bias voltage to the workpiece to generate a workpiece bias voltage with respect to the plasma to attract ions across the plasma sheath toward the workpiece. The aperture and the frequency of the bias voltage control an angle at which the ions are attracted toward the workpiece.

Abstract: An electron beam plasma source is used in a soft plasma surface treatment of semiconductor surfaces containing Ge or group III-V compound semiconductor materials.