Abstract: An article having a surface treated to provide a protective coating structure in accordance with the following method: vapor depositing a first layer on a substrate, wherein said first layer is a metal oxide adhesion layer selected from the group consisting of an oxide of a Group IIIA metal element, a Group IVB metal element, a Group VB metal element, and combinations thereof; vapor depositing a second layer upon said first layer, wherein said second layer includes a silicon-containing layer selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride; and vapor depositing a third layer upon said second layer, wherein said third layer is a functional organic-comprising layer, wherein said functional organic-comprising layer is a SAM.

Abstract: A method of protecting a substrate during fabrication of semiconductor, MEMS devices. The method includes application of a protective thin film which typically has a thickness ranging from 3 angstroms to about 1,000 angstroms, wherein precursor materials used to deposit the protective thin film are organic-based precursors which include at least one fluorine-comprising functional group at one end of a carbon back bone and at least one functional bonding group at the opposite end of a carbon backbone, and wherein the carbon backbone ranges in length from 4 carbons through about 12 carbons. In many applications at least a portion of the protective thin film is removed during fabrication of the devices.

Abstract: The present invention is related to carbon-doped metal oxide films. The carbon-doped metal oxide films provide a low coefficient of friction, for example ranging from about 0.05 to about 0.4. In addition, the carbon-doped metal oxide films applied over a silicon substrate, for example, provide anti-stiction properties, where the measured work of adhesion for a MEMS device cantilever beam coated with the carbon-doped metal oxide film is less than 10 ?J/m2. In addition, the carbon-doped metal oxide films provide unexpectedly good water vapor transmission properties. The carbon content in the carbon-doped metal oxide films ranges from about 5 atomic % to about 20 atomic %.

Abstract: A moisture barrier coating for protecting a substrate from moisture, comprises an inorganic layer disposed over the substrate, the inorganic layer comprising an oxide or nitride of an element selected from the group consisting of silicon, aluminum, titanium, zirconium, hafnium and combinations thereof; and an organic silicon-containing layer disposed over the inorganic layer.

Abstract: An article having a surface treated to provide a protective coating structure in accordance with the following method: vapor depositing a first layer on a substrate, wherein said first layer is a metal oxide adhesion layer selected from the group consisting of an oxide of a Group IIIA metal element, a Group IVB metal element, a Group VB metal element, and combinations thereof; vapor depositing a second layer upon said first layer, wherein said second layer includes a silicon-containing layer selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride; and vapor depositing a third layer upon said second layer, wherein said third layer is a functional organic-comprising layer, wherein said functional organic-comprising layer is a SAM.

Abstract: A vapor delivery apparatus for providing a precursor vapor for a vapor deposition process includes a precursor container for holding a liquid or solid precursor. A first temperature control assembly maintains the precursor container at a first temperature to generate a vapor precursor from the liquid or solid precursor. An isolation valve is coupled to the precursor container, and a specific quantity of the vapor precursor is accumulated in an expansion volume. A fill valve, which is coupled to each of the isolation valve and the expansion volume, controls the flow of the vapor precursor from the precursor container into the expansion volume. A second temperature control assembly maintains the isolation valve at a second temperature greater than the first temperature.

Abstract: An improved vapor-phase deposition method and apparatus for the application of multilayered films/coatings on substrates is described. The method is used to deposit multilayered coatings where the thickness of an oxide-based layer in direct contact with a substrate is controlled as a function of the chemical composition of the substrate, whereby a subsequently deposited layer bonds better to the oxide-based layer. The improved method is used to deposit multilayered coatings where an oxide-based layer is deposited directly over a substrate and an organic-based layer is directly deposited over the oxide-based layer. Typically, a series of alternating layers of oxide-based layer and organic-based layer are applied.

Abstract: A method of providing a durable protective coating structure which comprises at least three layers, and which is stable at temperatures in excess of 400° C., where the method includes vapor depositing a first layer deposited on a substrate, wherein the first layer is a metal oxide adhesion layer selected from the group consisting of an oxide of a Group IIIA metal element, a Group IVB metal element, a Group VB metal element, and combinations thereof; vapor depositing a second layer upon said first layer, wherein said second layer includes a silicon-containing layer selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride; and vapor depositing a third layer upon said second layer, wherein said third layer is a functional organic-comprising layer. Numerous articles useful in electronics, MEMS, nanoimprinting lithography, and biotechnology applications can be fabricated using the method.

Abstract: An improved vapor-phase deposition method and apparatus for the application of multilayered films/coatings on substrates is described. The method is used to deposit multilayered coatings where the thickness of an oxide-based layer in direct contact with a substrate is controlled as a function of the chemical composition of the substrate, whereby a subsequently deposited layer bonds better to the oxide-based layer. The improved method is used to deposit multilayered coatings where an oxide-based layer is deposited directly over a substrate and a SAM organic-based layer is directly deposited over the oxide-based layer. Typically a series of alternating layers of oxide-based layer and organic-based layer are applied.

Abstract: The present invention is related to a chemical vapor deposition method of depositing layers of materials to provide super-hydrophilic surface properties, or super-hydrophobic surface properties, or combinations of such properties at various locations on a given surface. The invention also relates to electronic applications which make use of super-hydrophobic surface properties, and to biological applications which make use of super-hydrophilic surface properties.

Abstract: We have developed an improved vapor-phase deposition method and apparatus for the application of films/coatings on substrates. The method provides for the addition of a precise amount of each of the reactants to be consumed in a single reaction step of the coating formation process. In addition to the control over the amount of reactants added to the process chamber, the present invention requires precise control over the total pressure (which is less than atmospheric pressure) in the process chamber, the partial vapor pressure of each vaporous component present in the process chamber, the substrate temperature, and typically the temperature of a major processing surface within said process chamber. Control over this combination of variables determines a number of the characteristics of a film/coating or multi-layered film/coating formed using the method. By varying these process parameters, the roughness and the thickness of the films/coatings produced can be controlled.

Abstract: A method of protecting a substrate during fabrication of semiconductor, MEMS, or biotechnology devices. The method includes application of a protective thin film which typically has a thickness ranging from about 3 ? to about 1,000 ?, wherein precursor materials used to deposit the protective thin film are organic-based precursors which include at least one fluorine-comprising functional group at one end of a carbon back bone and at least one functional bonding group at the opposite end of a carbon backbone, and wherein the carbon backbone ranges in length from 4 carbons through about 12 carbons. In many applications at least a portion of the protective thin film is removed during fabrication of the devices.

Abstract: We have developed an improved vapor-phase deposition method and apparatus for the application of layers and coatings on various substrates. The method and apparatus are useful in the fabrication of biotechnologically functional devices, Bio-MEMS devices, and in the fabrication of microfluidic devices for biological applications. In one important embodiment, oxide coatings providing hydrophilicity or oxide/polyethylene glycol coatings providing hydrophilicity can be deposited by the present method, over the interior surfaces of small wells in a plastic micro-plate in order to increase the hydrophilicity of these wells. Filling these channels with a precise amount of liquid consistently can be very difficult. This prevents a water-based sample from beading up and creating bubbles, so that well can fill accurately and completely, and alleviates spillage into other wells which causes contamination.

Abstract: An improved vapor-phase deposition method and apparatus for the application of multilayered films/coatings on substrates is described. The method is used to deposit multilayered coatings where the thickness of an oxide-based layer in direct contact with a substrate is controlled as a function of the chemical composition of the substrate, whereby a subsequently deposited layer bonds better to the oxide-based layer. The improved method is used to deposit multilayered coatings where an oxide-based layer is deposited directly over a substrate and an organic-based layer is directly deposited over the oxide-based layer. Typically, a series of alternating layers of oxide-based layer and organic-based layer are applied.

Abstract: We have developed an improved vapor-phase deposition method and apparatus for the application of layers and coatings on various substrates. The method and apparatus are useful in the fabrication of biofunctional devices, Bio-MEMS devices, and in the fabrication of microfluidic devices for biological applications. In one important embodiment, a siloxane substrate surface is treated using a combination of ozone and UV radiation to render the siloxane surface more hydrophilic, and subsequently a functional coating is applied in-situ over the treated surface of the siloxane substrate.

Abstract: We have devised an apparatus useful for and a method of removing impurities from vaporous precursor compositions used to generate reactive precursor vapors from which thin films/layers are formed under sub-atmospheric conditions. The method is particularly useful when the layer deposition apparatus provides for precise addition of quantities of different combinations of reactants during a single step or when there are a number of different individual steps in the layer formation process, where the presence of impurities has a significant affect on both the quantity of reactants being charged and the overall composition of the reactant mixture from which the layer is deposited. The method is particularly useful when the vapor pressure of a liquid reactive precursor is less than about 250 Torr at atmospheric pressure.

Abstract: We have developed an improved vapor-phase deposition method and apparatus for the application of films/coatings on substrates. The method provides for the addition of a precise amount of each of the reactants to be consumed in a single reaction step of the coating formation process. In addition to the control over the amount of reactants added to the process chamber, the present invention requires precise control over the total pressure (which is less than atmospheric pressure) in the process chamber, the partial vapor pressure of each vaporous component present in the process chamber, the substrate temperature, and typically the temperature of a major processing surface within said process chamber. Control over this combination of variables determines a number of the characteristics of a film/coating or multi-layered film/coating formed using the method. By varying these process parameters, the roughness and the thickness of the films/coatings produced can be controlled.

Abstract: A vapor phase deposition method and apparatus for the application of thin layers and coatings on substrates. The method and apparatus are useful in the fabrication of electronic devices, micro-electromechanical systems (MEMS), Bio-MEMS devices, micro and nano imprinting lithography, and microfluidic devices. The apparatus used to carry out the method provides for the addition of a precise amount of each of the reactants to be consumed in a single reaction step of the coating formation process. The apparatus provides for precise addition of quantities of different combinations of reactants during a single step or when there are a number of different individual steps in the coating formation process. The precise addition of each of the reactants in vapor form is metered into a predetermined set volume at a specified temperature to a specified pressure, to provide a highly accurate amount of reactant.

Abstract: We have developed an improved vapor-phase deposition method and apparatus for the application of layers and coatings on various substrates. The method and apparatus are useful in the fabrication of biofunctional devices, Bio-MEMS devices, and in the fabrication of microfluidic devices for biological applications. In one important embodiment, a siloxane substrate surface is treated using a combination of ozone and UV radiation to render the siloxane surface more hydrophilic, and subsequently a functional coating is applied in-situ over the treated surface of the siloxane substrate.