Patents Assigned to Applied Process
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Publication number: 20110186508Abstract: Apparatus and methods for water treatment are described, particularly for the simultaneous removal of nitrate, perchlorate, and other organic contaminates from contaminated water using a membrane biofilm reactor (MBfR).Type: ApplicationFiled: March 21, 2011Publication date: August 4, 2011Applicant: Applied Process Technology, Inc.Inventor: Reid Bowman
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Patent number: 7931807Abstract: Apparatus and methods for water treatment are described, particularly for the simultaneous removal of nitrate, perchlorate, and other organic contaminates from contaminated water using a membrane biofilm reactor (MBfR).Type: GrantFiled: October 8, 2009Date of Patent: April 26, 2011Assignee: Applied Process Technology, Inc.Inventor: Reid Bowman
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Patent number: 7618537Abstract: Apparatus and methods for water treatment are described, particularly for the simultaneous removal of nitrate, perchlorate, and other organic contaminates from contaminated water using a membrane biofilm reactor (MBfR).Type: GrantFiled: March 28, 2008Date of Patent: November 17, 2009Assignee: Applied Process Technology, Inc.Inventor: Reid Bowman
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Publication number: 20090152194Abstract: Compositions and methods for the removal of selenium species from water containing high-salt concentrations and/or petroleum contaminants are described. The compositions and methods use a selenium-reducing microorganism adapted to adverse environments.Type: ApplicationFiled: December 4, 2008Publication date: June 18, 2009Applicant: Applied Process Technology, Inc.Inventors: Charles Borg, David Friese, Tyze-Kuan Tim Yin
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Publication number: 20090095675Abstract: Apparatus, systems, and methods for removal of contaminants in water are described. In particular, apparatus, systems, and methods for the treatment of potable water, for removal of oxidized contaminants, using hollow polyester filaments for sustaining a biofilm are described.Type: ApplicationFiled: September 12, 2008Publication date: April 16, 2009Applicant: Applied Process TechnologyInventors: Antonius J. Runneboom, Reid Bowman, David D. Friese, Ryan S. Overstreet, Dennis P. Smith
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Patent number: 7506705Abstract: A down hole rock drill bit and method of manufacture of the same comprising a cast metal drill bit body having a plurality of hardened carbide studs partially cast in the drill bit body. The drill bit is cast by means of a foam pattern replicating the drill bit, typically made from polystyrene within which a plurality of carbide studs are partially inserted into the grinding surface of the foam drill bit model. The model is then subsequently supported within a vessel of sand and molten metal is poured over the foam, vaporizing it and taking the exact form of the foam pattern and permanently retaining the carbide studs within the metal drill bit.Type: GrantFiled: October 1, 2004Date of Patent: March 24, 2009Assignee: Applied Process, Inc.Inventors: Kristin R Brandenberg, John R Keough, Kathy L Hayrynen, Gerald J Wurtsmith
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Publication number: 20090039031Abstract: A method for inhibiting formation of hexavalent chromium during oxidative remediation of a contaminated site containing trivalent chromium is described. The method comprises introducing ozone at a first point to the contaminated site, where the ozone is introduced at a first frequency and for a first period of time, and introducing hydrogen peroxide to the contaminated site, where the hydrogen peroxide is introduced at a second frequency and for a second period of time. The first and second frequencies and first and second periods of time are selected to inhibit formation of hexavalent chromium within the site of remediation.Type: ApplicationFiled: July 2, 2008Publication date: February 12, 2009Applicant: Applied Process Technology, INC.Inventors: Douglas C. Gustafson, Reid H. Bowman
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Publication number: 20090032471Abstract: Innovative methods and systems for the removal and destruction of contaminants present in reclaimed or other waste water are described.Type: ApplicationFiled: July 29, 2008Publication date: February 5, 2009Applicant: Applied Process Technology, Inc.Inventor: Charles Borg
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Patent number: 7411352Abstract: A pair of plasma beam sources are connected across an AC power supply to alternatively produce an ion beam for depositing material on a substrate transported past the ion beams. Each plasma beam source includes a discharge cavity having a first width and a nozzle extending outwardly therefrom to emit the ion beam. The aperture or outlet of the nozzle has a second width, which second width is less than the first width. An ionizable gas is introduced to the discharge cavity. At least one electrode connected to the AC power supply, alternatively serving as an anode or a cathode, is capable of supporting at least one magnetron discharge region within the discharge cavity when serving as a cathode electrode. A plurality of magnets generally facing one another, are disposed adjacent each discharge cavity to create a magnetic field null region within the discharge cavity.Type: GrantFiled: April 19, 2006Date of Patent: August 12, 2008Assignee: Applied Process Technologies, Inc.Inventor: John E. Madocks
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Publication number: 20080175671Abstract: A system and method for the in-situ removal or remediation of contaminants in a soil formation containing a subsurface groundwater aquifer, the method comprising the steps of: injecting a first oxidant into the aquifer at an injection point to create a volume of influence of the first oxidant in the aquifer thereby treating the contaminants contained within the volume of influence; and injecting a compressed gas into the aquifer to increase the size of the volume of influence of the first oxidant. The injection of the compressed gas into the aquifer can also force the groundwater in the aquifer away from the injection point into a surrounding area to transport the first oxidant into the surrounding area thereby extracting contaminants from soil adjacent to the surrounding area.Type: ApplicationFiled: August 31, 2007Publication date: July 24, 2008Applicant: Applied Process Technology, Inc.Inventors: Reid H. Bowman, Tom Lahey, Peter Herlihy
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Patent number: 7327089Abstract: A plasma source which includes a discharge cavity having a first width, where that discharge cavity includes a top portion, a wall portion, and a nozzle disposed on the top portion and extending outwardly therefrom, where the nozzle is formed to include an aperture extending through the top portion and into the discharge cavity, wherein the aperture has a second width, where the second width is less than the first width. The plasma source further includes a power supply, a conduit disposed in the discharge cavity for introducing an ionizable gas therein, and at least one cathode electrode connected to the power supply, where that cathode electrode is capable of supporting at least one magnetron discharge region within the discharge cavity. The plasma source further includes a plurality of magnets disposed adjacent the wall portion, where that plurality of magnets create a null magnetic field point within the discharge cavity.Type: GrantFiled: September 19, 2003Date of Patent: February 5, 2008Assignee: Applied Process Technologies, Inc.Inventor: John E. Madocks
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Patent number: 7294283Abstract: The preferred embodiments described herein provide a Penning discharge plasma source. The magnetic and electric field arrangement, similar to a Penning discharge, effectively traps the electron Hall current in a region between two surfaces. When a substrate (10) is positioned proximal to at least one of the electrodes (11, 12) and is moved relative to the plasma, the substrate (10) is plasma treated, coated or otherwise modified depending upon the process gas used and the process pressure. This confinement arrangement produces dramatic results not resembling known prior art. Using this new source, many applications for PECVD, plasma etching, plasma treating, sputtering or other plasma processes will be substantial improved or made possible. In particular, applications using flexible webs (10) are benefited.Type: GrantFiled: April 10, 2002Date of Patent: November 13, 2007Assignee: Applied Process Technologies, Inc.Inventor: John Madocks
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Patent number: 7264419Abstract: A system and method for the in-situ removal or remediation of contaminants in a soil formation containing a subsurface groundwater aquifer, the method comprising the steps of: injecting a first oxidant into the aquifer at an injection point to create a volume of influence of the first oxidant in the aquifer thereby treating the contaminants contained within the volume of influence; and injecting a compressed gas into the aquifer to increase the size of the volume of influence of the first oxidant. The injection of the compressed gas into the aquifer can also force the groundwater in the aquifer away from the injection point into a surrounding area to transport the first oxidant into the surrounding area thereby extracting contaminants from soil adjacent to the surrounding area.Type: GrantFiled: March 19, 2004Date of Patent: September 4, 2007Assignee: Applied Process Technology, Inc.Inventors: Reid H. Bowman, Tom Lahey, Peter Herlihy
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Patent number: 7259378Abstract: A closed drift ion source which includes a channel having an open end, a closed end, and an input port for an ionizable gas. A first magnetic pole is disposed on the open end of the channel and extends therefrom in a first direction. A second magnetic pole disposed on the open end of the channel and extends therefrom in a second direction, where the first direction is opposite to the second direction. The distal ends of the first magnetic pole and the second magnetic pole define a gap comprising the opening in the first end. An anode is disposed within the channel. A primary magnetic field line is disposed between the first magnetic pole and the second magnetic pole, where that primary magnetic field line has a mirror field greater than 2.Type: GrantFiled: July 8, 2005Date of Patent: August 21, 2007Assignee: Applied Process Technologies, Inc.Inventor: John Madocks
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Publication number: 20070026161Abstract: A magnetic mirror plasma (77) source comprises two surfaces separated by a gap wherein one of the surfaces is a wafer (76) and the other surface is a cathode. The apparatus comprises a cover (72), target (83), shunt (74, 81), non-magnetic stage (75), magnet array (80), bias supply (82), and power supply (70). A mirror magnetic field (12) extends between the surfaces through the gap, wherein the magnetic field (78) lines at the substrate surface are at least two times as strong as those field lines entering the cathode. An anode is disposed such that a closed loop electron Hall current containment region is formed within the magnetic field, where with sufficient gas pressure and voltage between the cathode and anode, plasma is formed in the containment region. The result is a novel plasma source that has unique and important advantages enabling advancements in PECVD, etching, sputtering and plasma treatment processes.Type: ApplicationFiled: September 13, 2004Publication date: February 1, 2007Applicant: APPLIED PROCESS TECHNOLOGIES, INC.Inventor: John Madocks
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Publication number: 20060100728Abstract: A system and method for the simulation and modeling of biopharmaceutical batch process manufacturing facilities using process time lines is described herein. The system employs an eleven-field delimited string code which specifies the unit identifier code and the iteration value for each of the ten levels of nested scheduling cycles of the biopharmaceutical drug production process being modeled. The method includes generating a process time line using operational parameters, a block flow diagram, and a set of scheduling cycles for each of a sequence of unit operations. The process time line is used as a tool for batch processing and facility design.Type: ApplicationFiled: May 17, 2005Publication date: May 11, 2006Applicant: Applied Process Technologies IncorporatedInventor: Peter Brown
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Patent number: 7038389Abstract: A point projection type flood plasma source implements a magnetron sputter cold cathode electron source in a discharge cavity separated from a process chamber by a narrow conduit and a solenoid magnetic field. The solenoid magnetic field impedes radial electron flow in the nozzle and the process chamber. Process gas flows into the discharge cavity and through the nozzle to the process chamber. This gas is ionized in the nozzle and the process chamber by electrons trapped in the solenoid magnetic field. The result is a dense plasma plume in the process chamber useful for a number of applications. The source has particular advantages for reactive gas processes such as those requiring oxygen.Type: GrantFiled: April 30, 2004Date of Patent: May 2, 2006Assignee: Applied Process Technologies, Inc.Inventor: John Madocks
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Patent number: 7025833Abstract: A chill drum (14) is modified to improve heat transfert between the drum and a flexible web substrate (20) disposed around the drum. The drum surface (22) contains a series of passages (44) and distribution holes (46). A working gas is injected into these passages and flows out of the distribution holes into the space between the web and drum. A cover (32) prevents working gas from escaping from frum passages in the area not covered by the web, and supplies the working gas to the passages at the drum cover. Once gas is in the passages, leakage only occurs from the edges of the web. The pressure in the passages remains essentially constant around the drum, producing uniform elevated pressures under the entire web. Elevated pressure behind the web significantly improves overall heat transfert, thereby allowing higher deposition rates and other process advantages.Type: GrantFiled: February 27, 2002Date of Patent: April 11, 2006Assignee: Applied Process Technologies, Inc.Inventor: John Madocks
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Patent number: 7023128Abstract: A dipole ion source (FIG. 1) includes two cathode surfaces, a substrate (1) and a pole (3); wherein a gap is defined between the substrate and the pole; an unsymmetrical mirror magnetic field including a compressed end, wherein the substrate is positioned in the less compressed end of the magnetic field; and an anode (4) creating an electric field penetrating the magnetic field and confining electrons in a continuous Hall current loop, wherein the unsymmetrical magnetic field serves an ion beam on the substrate.Type: GrantFiled: April 10, 2002Date of Patent: April 4, 2006Assignee: Applied Process Technologies, Inc.Inventor: John Madocks
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Patent number: 6919672Abstract: A closed drift ion source which includes a channel having an open end, a closed end, and an input port for an ionizable gas. A first magnetic pole is disposed on the open end of the channel and extends therefrom in a first direction. A second magnetic pole disposed on the open end of the channel and extends therefrom in a second direction, where the first direction is opposite to the second direction. The distal ends of the first magnetic pole and the second magnetic pole define a gap comprising the opening in the first end. An anode is disposed within the channel. A primary magnetic field line is disposed between the first magnetic pole and the second magnetic pole, where that primary magnetic field line has a mirror field greater than 2.Type: GrantFiled: April 10, 2003Date of Patent: July 19, 2005Assignee: Applied Process Technologies, Inc.Inventor: John Madocks