Abstract: Channel coupled feedback- technology for implementing many analog and digital signal processing functions in a single-polysilicon digital IC fabrication process is described. Field effect transistors are constructed having a common channel and the substrate regions of the field effect transistors in the channel are electronically connected. Thus, a fixed amount of charge can freely move within the channel in response to the application of the signal to be processed. By sensing the charge transferred within the channel when the input signal is applied, many signal processing functions are possible. Fixed-gain amplifiers, offset compensated amplifiers, integrators, differentiators, analog-to-digital converters, digital-to-analog converters, switchable gain amplifiers, automatic gain control systems, and linear transform computation circuits are constructed entirely with field effect transistors, eliminating the need for passive components for most signal processing functions.

Abstract: A novel electronic apparatus for driving passive x-y addressed liquid crystal displays (LCDs) and having improved display performance is disclosed and claimed. This apparatus is comprised of row driving integrated circuits capable of driving row lines of the LCD with a pattern of voltages corresponding to the basis vectors of a linear transform matrix. Column driver circuits containing analog CMOS pixel memory store video information and compute the linear transform of the pixel matrix. High voltage amplifier circuits to drive the column lines with voltages corresponding to the linear transform of the pixel matrix columns can be monolithically integrated with the transform computation circuitry. The LCD screen inherently performs the inverse transform and displays the desired pixel matrix. The speed and contrast of the LCD are improved, allowing the display of video rate images on passive LCD screens.

Abstract: Novel high voltage electronic amplifiers that are capable of being monolithically integrated using low voltage semiconductor fabrication processes are described and claimed. A cascade of low voltage current mirrors is described that can act as a high voltage amplifier output circuit. A transconductor and level shift circuit is also described that can be employed in the high voltage amplifier output circuit. A high voltage current source is described and is constructed from the series combination of a low voltage transistor and a parasitic field oxide transistor. Additionally, a differential amplifier having bias-current shunting transistors is described that can be used to limit quiescent current from the output power supply of the high voltage amplifiers.

Abstract: Novel high voltage amplifiers that are capable of being monolithically integrated using low voltage semiconductor fabrication processes are described and claimed. A cascade of low voltage current mirrors is described that can act as a high voltage amplifier output circuit. A high voltage current source circuit also is described and is constructed from the series combination of a low voltage transistor and a parasitic field oxide transistor. Additionally, a differential amplifier having bias current shunting transistors is described that can be used to limit quiescent current from the power supply of the high voltage amplifiers.