Abstract: A process for is provided for synthesizing a compound having the formula E(GeH3)3 wherein E is selected from the group consisting of arsenic (As), antimony (Sb) and phosphorus (P). GeH3Br and [CH3)3Si]3E are combined under conditions whereby E(GeH3)3 is obtained. The E(GeH3)3 is purified by trap-to-trap fractionation. Yields from about 70% to about 76% can be obtained. The E(GeH3)3 can be used as a gaseous precursor for doping a region of a semiconductor material comprising Ge, SnGe, SiGe and SiGeSn in a chemical vapor deposition reaction chamber.
Type:
Grant
Filed:
June 14, 2004
Date of Patent:
July 3, 2007
Assignee:
Arizona Board of Regenta, a body corporate of the State of Arizona acting for and on behalf of Arizona State University
Inventors:
John Kouvetakis, Matthew Bauer, John Tolle, Candi Cook