Abstract: A current sensor is configured such that at least one magnetoelectric conversion element, a conductor, a signal processing IC, an IC supporting portion, and an element supporting portion are encapsulated with an encapsulating portion. The current sensor is comprised of a pair of first lead terminals that is partially exposed outside the encapsulating portion, is electrically connected to the conductor, inputs a measurement current to the conductor, and outputs the measurement current from the conductor; and a metal member that is partially exposed outside the encapsulating portion and is spaced apart from the conductor. The element supporting portion further supports the metal member on a surface on the same side as a first surface on which the IC supporting portion supports the signal processing IC.

Abstract: An infrared module that enables temperature regulation of an infrared sensor to be readily achieved and a method of correcting the infrared module are provided. The infrared module (10) includes an infrared sensor (11) that detects infrared radiation emitted from an object being measured, a computation and control processor (20) that includes a temperature measurement unit (22) that obtains a signal from the infrared sensor and measures a temperature of its own, the computation and control processor obtaining a temperature signal from the temperature measurement unit and performing a computation, and a heating element (60) that regulates a temperature of the infrared sensor by generating heat, wherein the infrared sensor and the computation and control processor are stacked.

Abstract: An infrared detecting device is provided. The infrared detecting device includes: a semiconductor substrate; a first layer having a first conductivity type on the semiconductor substrate; a light receiving layer on the first layer; and a second layer having a second conductivity type on the light receiving layer. A part of the first layer, the light receiving layer, and the second layer form a mesa structure. The second layer contains AlzIn1-zSb (0.05<z<0.18). The side surfaces and an upper surface of the mesa structure are covered with the protective layer. A part of an upper surface of the second layer that forms an interface between the second layer and the protective layer has an oxide layer made of a constituent material of the second layer. The oxide layer includes an oxide of Al and has no oxide of Sb.

Abstract: The present invention relates to a hall electromotive force signal detection circuit and a current sensor thereof each of which is able to achieve excellent wide-band characteristics and fast response as well as high accuracy. A difference calculation circuit samples a component synchronous with a chopper clock generated by a chopper clock generation circuit, out of an output voltage signal of a signal amplifier circuit, at a timing obtained from the chopper clock, so as to detect the component. An integrating circuit integrates an output from the difference calculation circuit in the time domain. An output voltage signal from the integrating circuit is fed back to a signal amplifier circuit via a third transconductance element.

Abstract: Provided is an event detection method comprising: obtaining an event occurrence position based on a magnetic field detected by a magnetic sensor; selecting a detection axis for event detection based on the event occurrence position; calculating a trigger threshold value according to the event occurrence position on the detection axis; and obtaining a trigger signal indicating that the magnetic field detected by the magnetic sensor and the trigger threshold value meet a predefined condition.

Abstract: Disclosed is an infrared detecting device with a high SNR. The infrared detecting device 100 includes a semiconductor substrate 10; a first layer 20 formed on the semiconductor substrate and having a first conductivity type; a light receiving layer 30 formed on the first layer; and a second layer 40 formed on the light receiving layer and having a second conductivity type. The first layer includes, in the stated order: a layer containing Alx(1)In1-x(1)Sb; a layer having a film thickness ty(1) in nanometers and containing Aly(1)In1-y(1)Sb; and a layer containing Alx(2)In1-x(2)Sb, where ty(1), x(1), x(2), and y(1) satisfy the following relations: for j=1, 2, 0<ty(1)?2360×(y(1)?x(j))?240 (0.11?y(1)?x(j)?0.19), 0<ty(1)??1215×(y(1)?x(j))+427 (0.19<y(1)?x(j)?0.33), and 0<x(j)<0.18.

Abstract: Provided is a magnetic field measuring apparatus, comprising: a magnetic sensor array including a plurality of magnetic sensor cells, which is capable of detecting an input magnetic field in three axial directions at a plurality of locations in three-dimensional space; a measurement data acquiring section for acquiring measurement data based on the input magnetic field including a to-be-measured magnetic field; and a measurement data computing section for calibrating the measurement data acquired by the measurement data acquiring section; wherein the measurement data computing section comprises: an indicator calculation section for calculating an indicator illustrating calibration accuracy of the measurement data computing section; and a failure determination section for determining a failure based on the indicator calculated by the indicator calculation section; wherein each of the plurality of magnetic sensor cells comprises: a magnetic sensor; and an output section for outputting a output signal.

Abstract: Provided is a DA converter for outputting an analog signal according to an input digital signal, including a plurality of current output units to be input with the digital signal, which output a current according to the digital signal to a corresponding wiring, a conversion unit provided with a plurality of feedback paths respectively coupled to wirings corresponding to the current output units, and which selects at least one wiring among the wirings corresponding to the current output units and output an analog signal according to a current flowing in the selected wiring, and a first noise reduction unit provided with a plurality of first switches each of which switches whether to electrically connect to at least one wiring among the wirings corresponding to the current output units, and reduces a noise component generated in at least one of the plurality of current output units from the electrically coupled wiring.

Abstract: An optical device comprises an optical filter having a substrate and a multilayer film having layers with different refractive indexes formed on at least one side of the substrate; and an infrared light emitting and receiving device having a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer. The multilayer film has alternatively stacked first second layers each having refractive indexes of 1.2 or more and 2.5 or less, and 3.2 or more and 4.2 or less, respectively, in a wavelength range of 2400 nm to 6000 nm. The optical filter includes a wavelength range having an average transmittance of 70% or more with a width of 50 nm or more in a wavelength range of 2400 nm to 6000 nm, and has a maximum transmittance of 5% or more in a wavelength range of 6000 nm to 8000 nm.

Abstract: A gas sensor comprises first and second light emitting parts, first and second light receiving parts, and first and second optical path regions, wherein the optical path regions have a common region, a first light receiving part has a larger rate of change of an output signal with respect to a first gas than a second light receiving part, the second light receiving part has a larger rate of change of an output signal with respect to an second gas than the first light receiving part, the first light receiving part has a sensitivity peak wavelength closer to a first wavelength in an absorption wavelength band of the first gas than the second light receiving part, and the second light receiving part has a sensitivity peak wavelength closer to a second wavelength in an absorption wavelength band of the second gas than the first light receiving part.

Abstract: Provided is an optical densitometer for measuring a density of a gas or liquid of interest, the optical densitometer comprising: a light source capable of introducing light into a core layer; a detector capable of receiving the light that has propagated through the core layer; and an optical waveguide, the optical waveguide comprising: a substrate; and the core layer comprising a light propagation portion capable of propagating the light in an extending direction of the light propagation portion, and a diffraction grating portion, the diffraction grating portion comprising a diffraction grating region and an extension region connected to the diffraction grating region, and a first optical coupling region included in the extension region and a second optical coupling region included in the light propagation portion being optically coupled with respect to the light propagating through the core layer.

Abstract: A small-sized gas detection apparatus with high measurement accuracy is provided. The gas detection apparatus includes a light emitting portion (1); a light receiving portion (2); a first mirror (3) that has a quadric reflective surface and reflects light emitted from the light emitting portion; and a second mirror (4) that has a quadric reflective surface and reflects the light reflected by the first mirror to the first mirror. The quadric surfaces of the first mirror and the second mirror have convex portions facing in a same direction. The first mirror reflects the light reflected by the second mirror to the light receiving portion. When one surface of a substrate on which the light emitting portion and the light receiving portion are mounted is used as a reference plane, the first mirror and the second mirror are provided at positions higher than the reference plane and have different heights.

Abstract: An optical concentration measurement device includes an LED light source, alight receiving unit having a rectangular light receiving surface and outputting a detection signal representing intensity of received light, and light guiding units guiding light emitted by the LED light source to the light receiving unit, wherein a shape on the rectangular light receiving surface of light radiated on the light receiving surface is rectangular, the optical concentration measurement device measures concentration of an object to be measured existing in a light path formed by the light guiding units, based on the detection signal output from the light receiving unit, and the light guiding units guide light at a diffraction limit or greater in such a way that area of the light on the rectangular light receiving surface is ½ or less of area of the rectangular light receiving surface.

Abstract: A current sensor is configured by at least one magnetoelectric conversion element, a conductor, and a signal processing IC being encapsulated by an encapsulating portion. The current sensor includes a pair of first lead terminals that is partially exposed outside of the encapsulating portion, is electrically connected to the conductor, inputs the measurement current to the conductor, and outputs the measurement current from the conductor; a metal member that is partially exposed outside the encapsulating portion and is spaced apart from the conductor; and a supporting portion that supports the at least one magnetoelectric conversion element, the signal processing IC, and the metal member on a first surface, is separated from the conductor, and is separate from the metal member.

Abstract: To achieve a size reduction of a semiconductor package while securing stability in mounting. Three terminals t1, t2, and t4 are individually arranged on a semiconductor package 10 having a rectangular shape as viewed in plan in such a manner that the center in the longitudinal direction of the semiconductor package 10 of each of the three terminals t1, t2, and t4 and the center in the longitudinal direction of each of the other terminals are not overlapped with each other as viewed from the side of the long side.

Abstract: A compound semiconductor device having a high SNR is provided. A compound semiconductor device (1) includes an insulating substrate (10); a plurality of mesa-type compound semiconductor laminate portions (20) including a first compound semiconductor layer (21) having a first conductivity type, an active layer (23) made of a compound semiconductor material, and a second compound semiconductor layer (25) having a second conductivity type laminated in this order; a first protective film (31); a second protective film (32) made of a material having a film density greater than that of the first protective film (31); and a recess (40) including recess side surfaces (40a) and a recess bottom surface (40b) for separating the plurality of mesa-type compound semiconductor laminate portion. The recess side surface and the recess bottom surface are covered with the first protective film and the second protective film.

Abstract: Provided is a gas sensor comprising first and second light emitting parts, first and second light receiving parts, a first optical path region and a second optical path region, wherein the optical path regions have a common region, an optical path length of the first optical path region is longer than that of the second optical path region, a rate of change of an output signal with respect to a gas to be measured of the first light receiving part is larger than that of the second light receiving part, a rate of change of an output signal with respect to an interference gas of the second light receiving part is larger than that of the first light receiving part, and a sensitivity peak wavelength of the second light receiving part overlaps with an absorption wavelength of water vapor.

Abstract: A gas sensor includes a light receiving element, a light emitting element, an integrated circuit, a lead frame, and a sealing member configured to seal these into a package. The lead frame includes at least one die pad portion and a plurality of terminal portions, the die pad portion includes a first region having a first thickness and a second region having a second thickness thinner than the first thickness, the integrated circuit is arranged on the second region of the die pad portion, the light emitting element is electrically connected to at least one of the plurality of terminal portions, the light receiving element is electrically connected to the integrated circuit and is arranged on the opposite side to the light emitting element with the integrated circuit interposed therebetween, and the integrated circuit is electrically connected to at least one of the plurality of terminal portions.

Abstract: An optical filter for an optical device comprises a substrate and a multilayer film having a plurality of layers with different refractive indexes formed on at least one side of the substrate. The multilayer film has a structure in which a first layer and a second layer are alternately stacked. The first layer has a refractive index of 1.2 or more and 2.5 or less, and the second layer has a refractive index of 3.2 or more and 4.3 or less in a wavelength range of 6 ?m to 10 ?m. The optical filter includes a wavelength range having an average transmittance of 70% or more with a width of 50 nm or more in a wavelength range of 6 ?m to 10 ?m, and has a maximum transmittance of 10% or more in a wavelength range of 12.5 ?m to 20 ?m.

Abstract: A gas sensor includes, in a single housing section, a substrate mounting surface 31 mounted with a substrate including a light emitter and a light receiver and a mirror section including plural reflectors. Then, in the housing section, all of the plural reflectors are integrally molded on an inner surface of the housing section to multiple reflect light emitted from the light emitter and cause the light to enter the light receiver in an opposing direction of one side and the other side in an extension direction of the substrate mounting surface.