Abstract: A deposition apparatus according to an exemplary embodiment of the present invention includes a plurality of reaction spaces, a plurality of plasma electrodes respectively disposed in the reaction spaces, a first plasma processor connected to at least two plasma electrodes, and a first plasma power source connected to the first plasma processor. The first plasma processor may include a plasma distributor or a plasma splitter.

Abstract: A lateral flow atomic layer deposition (ALD) apparatus has two gas inflow channels and two gas outflow channels that are connected to two gas outlets that are symmetrically formed based on a substrate in which a thin film is deposited, thereby differently guiding a flow direction of a gas flowing on the substrate. Therefore, uniformity of a deposited film is improved, compared with the conventional lateral flow ALD apparatus in which a supplied source gas and reaction gas constantly flow in only one direction on the substrate.

Abstract: A deposition apparatus according to an exemplary embodiment of the present invention includes a plurality of reaction spaces, a plurality of plasma electrodes respectively disposed in the reaction spaces, a first plasma processor connected to at least two plasma electrodes, and a first plasma power source connected to the first plasma processor. The first plasma processor may include a plasma distributor or a plasma splitter.

Abstract: A lateral flow atomic layer deposition device according to an exemplary embodiment of the present invention eliminates a gas flow control plate in a conventional lateral flow atomic layer deposition device and controls shapes of a gas input part and a gas output part in a reactor cover to make a gas flow path to a center of a substrate shorter than a gas flow path to an edge of the substrate and thereby increase the amount of gas per unit area flowing to the center of the substrate. Therefore, film thickness in the center of the substrate in the lateral flow reactor increases.

Abstract: A lateral flow atomic layer deposition (ALD) apparatus has two gas inflow channels and two gas outflow channels that are connected to two gas outlets that are symmetrically formed based on a substrate in which a thin film is deposited, thereby differently guiding a flow direction of a gas flowing on the substrate. Therefore, uniformity of a deposited film is improved, compared with the conventional lateral flow ALD apparatus in which a supplied source gas and reaction gas constantly flow in only one direction on the substrate.

Abstract: A deposition apparatus according to an exemplary embodiment of the present invention is a lateral-flow deposition apparatus in which in which a process gas flows between a surface where a substrate is disposed and the opposite surface, substantially in parallel with the substrate. The lateral-flow deposition apparatus includes: a substrate support that moves up/down and rotates the substrate while supporting the substrate; a reactor cover that defines a reaction chamber by contacting the substrate support; and a substrate support lifter and a substrate support rotator that move the substrate support.

Abstract: A deposition apparatus configured to form a thin film on a substrate includes: a reactor wall; a substrate support positioned under the reactor wall; and a showerhead plate positioned above the substrate support. The showerhead plate defines a reaction space together with the substrate support. The apparatus also includes one or more gas conduits configured to open to a periphery of the reaction space at least while an inert gas is supplied therethrough. The one or more gas conduits are configured to supply the inert gas inwardly toward the periphery of the substrate support around the reaction space. This configuration prevents reactant gases from flowing between a substrate and the substrate support during a deposition process, thereby preventing deposition of an undesired thin film and impurity particles on the back side of the substrate.

Abstract: A reactor configured to subject a substrate to alternately repeated surface reactions of vapor-phase reactants is disclosed. The reactor may include a reaction chamber that defines a reaction space and a gas flow control guide structure; and a substrate holder. The gas flow control guide includes one or more channels. Each of the channels widens as the channel extends from the inlet to the reaction space. At least one of the channels is configured to generate a non-uniform laminar flow at a first portion of the periphery of the reaction space such that the laminar flow includes a plurality of flow paths that provide different amounts of a fluid. The reaction chamber may include a reactor base and a reactor cover detachable from each other; and a driver configured to independently adjust at least three portions of the reactor base to provide a substantially perfect seal to the reactor space.

Abstract: A reactor configured to subject a substrate to alternately repeated surface reactions of vapor-phase reactants is disclosed. The reactor may include a reaction chamber that defines a reaction space and a gas flow control guide structure; and a substrate holder. The gas flow control guide includes one or more channels. Each of the channels widens as the channel extends from the inlet to the reaction space. At least one of the channels is configured to generate a non-uniform laminar flow at a first portion of the periphery of the reaction space such that the laminar flow includes a plurality of flow paths that provide different amounts of a fluid. The reaction chamber may include a reactor base and a reactor cover detachable from each other; and a driver configured to independently adjust at least three portions of the reactor base to provide a substantially perfect seal to the reactor space.

Abstract: A lateral flow atomic layer deposition (ALD) apparatus has two gas inflow channels and two gas outflow channels that are connected to two gas outlets that are symmetrically formed based on a substrate in which a thin film is deposited, thereby differently guiding a flow direction of a gas flowing on the substrate. Therefore, uniformity of a deposited film is improved, compared with the conventional lateral flow ALD apparatus in which a supplied source gas and reaction gas constantly flow in only one direction on the substrate.

Abstract: A thin film deposition apparatus including a substrate mounting error detector, a chamber and a substrate support positioned in the chamber. The substrate support is configured to support a substrate. The substrate mounting error detector includes: a light source configured to provide a light beam to the substrate, such that the substrate reflects the light beam; a collimator configured to selectively pass at least a portion of the light beam reflected by the substrate; and an optical sensor configured to detect the at least a portion of the reflected light beam passed by the collimator. The detector is positioned and oriented to detect substrate position on a lowered support prior to raising the support into contact with an upper cover of a clamshell reactor arrangement. This configuration allows a thin film deposition process only if the substrate is correctly mounted on the substrate support. Thus, abnormal deposition due to a substrate mounting error is prevented in advance.

Abstract: A lateral flow atomic layer deposition device according to an exemplary embodiment of the present invention eliminates a gas flow control plate in a conventional lateral flow atomic layer deposition device and controls shapes of a gas input part and a gas output part in a reactor cover to make a gas flow path to a center of a substrate shorter than a gas flow path to an edge of the substrate and thereby increase the amount of gas per unit area flowing to the center of the substrate. Therefore, film thickness in the center of the substrate in the lateral flow reactor increases.

Abstract: A reactor configured to subject a substrate to alternately repeated surface reactions of vapor-phase reactants is disclosed. In one embodiment, the reactor includes a reaction chamber that defines a reaction space; one or more inlets; an exhaust outlet; a gas flow control guide structure; and a substrate holder. The gas flow control guide includes one or more channels, each of which extends from a respective one of the one or more inlets to a first portion of a periphery of the reaction space. Each of the channels widens as the channel extends from the inlet to the reaction space. At least one of the channels is configured to generate a non-uniform laminar flow at the first portion of the periphery of the reaction space such that the laminar flow includes a plurality of flow paths that provide different amounts of a fluid.

Abstract: Cyclical methods of depositing a ruthenium layer on a substrate are provided. In one process, initial or incubation cycles include supplying alternately and/or simultaneously a ruthenium precursor and an oxygen-source gas to deposit ruthenium oxide on the substrate. The ruthenium oxide deposited on the substrate is reduced to ruthenium, thereby forming a ruthenium layer. The oxygen-source gas may be oxygen gas (O2). The ruthenium oxide may be reduced by supplying a reducing agent, such as ammonia (NH3) gas. The methods provide a ruthenium layer having good adherence to an underlying high dielectric layer while providing good step coverage over structures on the substrate. After nucleation, subsequent deposition cycles can be altered to optimize speed and/or conformality rather than adherence.

Abstract: A thin film deposition apparatus and a method of maintaining the same are disclosed. In one embodiment, a thin film deposition apparatus includes: a chamber including a removable chamber cover; one or more reactors housed in the chamber; a chamber cover lifting device connected to the chamber cover. The chamber cover lifting device is configured to move the chamber cover vertically between a lower position and an upper position. The apparatus further includes a level sensing device configured to detect whether the chamber cover is level, and a level maintaining device configured to adjust the chamber cover if the chamber cover is not level. This configuration maintains the chamber cover to be level as a condition for further vertical movement of the chamber cover.

Abstract: Semiconductor patterns are formed by performing trimming simultaneously with the process of depositing the spacer oxide. Alternatively, a first part of the trimming is performed in-situ, immediately before the spacer oxide deposition process in the same chamber in which the spacer oxide deposition is performed whereas a second part of the trimming is performed simultaneously with the process of depositing the spacer oxide. Thus, semiconductor patterns are formed reducing PR footing during PR trimming with direct plasma exposure.

Abstract: The present invention relates to an ALD apparatus, and particularly relates to an ALD apparatus that is suitable for rapidly depositing a thin film on a substrate having an actual area that is larger than a planar substrate. In the reaction chamber of the ALD apparatus according to an exemplary embodiment of the present invention, more gas is supplied to a portion where more gas is required by having differences in the space for gas to flow rather than supplying the gas in a constant flux and a constant flow velocity such that the time required for supplying reactant gases and waste of reactant gases may be minimized to increase productivity of the ALD apparatus. The ceiling of the reaction space is shaped to provide a nonuniform gap over the substrate.

Abstract: A deposition apparatus configured to form a thin film on a substrate includes: a reactor wall; a substrate support positioned under the reactor wall; and a showerhead plate positioned above the substrate support. The showerhead plate defines a reaction space together with the substrate support. The apparatus also includes one or more gas conduits configured to open to a periphery of the reaction space at least while an inert gas is supplied therethrough. The one or more gas conduits are configured to supply the inert gas inwardly toward the periphery of the substrate support around the reaction space. This configuration prevents reactant gases from flowing between a substrate and the substrate support during a deposition process, thereby preventing deposition of an undesired thin film and impurity particles on the back side of the substrate.

Abstract: A deposition apparatus configured to form a thin film on a substrate includes: a reactor wall; a substrate support positioned under the reactor wall; and a showerhead plate positioned above the substrate support. The showerhead plate defines a reaction space together with the substrate support. The apparatus also includes one or more gas conduits configured to open to a periphery of the reaction space at least while an inert gas is supplied therethrough. The one or more gas conduits are configured to supply the inert gas inwardly toward the periphery of the substrate support around the reaction space. This configuration prevents reactant gases from flowing between a substrate and the substrate support during a deposition process, thereby preventing deposition of an undesired thin film and impurity particles on the back side of the substrate.

Abstract: The present invention relates to an ALD apparatus, and particularly relates to an ALD apparatus that is suitable for rapidly depositing a thin film on a substrate having an actual area that is larger than a planar substrate. In the reaction chamber of the ALD apparatus according to an exemplary embodiment of the present invention, more gas is supplied to a portion where more gas is required by having differences in the space for gas to flow rather than supplying the gas in a constant flux and a constant flow velocity such that the time required for supplying reactant gases and waste of reactant gases may be minimized to increase productivity of the ALD apparatus. The ceiling of the reaction space is shaped to provide a nonuniform gap over the substrate.