Abstract: A semiconductor wafer processing system including a multi-chamber module having vertically-stacked semiconductor wafer process chambers and a loadlock chamber dedicated to each semiconductor wafer process chamber. Each process chamber includes a chuck for holding a wafer during wafer processing. The multi-chamber modules may be oriented in a linear array. The system further includes an apparatus having a dual-wafer single-axis transfer arm including a monolithic arm pivotally mounted within said loadlock chamber about a single pivot axis. The apparatus is adapted to carry two wafers, one unprocessed and one processed, simultaneously between the loadlock chamber and the process chamber. A method utilizing the disclosed system is also provided.

Abstract: An apparatus and method of transferring and loading a reticle onto a receiving station (for example, a reticle exposure stage). The reticle is first retrieved from a storage facility with an end effector having an reticle plate coupled to a mounting plate. The mounting plate connects the end effector to a robotic arm. The reticle is aligned in an out-of-plane position in an off-line alignment station. The alignment is in compliance with the alignment requirement at the receiving station. The reticle is mounted onto the reticle plate after undergoing the alignment at the off-line alignment station. The reticle is then transferred from the off-line alignment station to the receiving station while maintaining the previous alignment at the off-line alignment station. The apparatus further provides rigidity of the mounted reticle to ensure compliance with the alignment requirement at the receiving station.

Abstract: The present invention relates to a method and system for expanding a laser beam. An illumination system includes a horizontal reflective multiplexer and a vertical reflective multiplexer. The horizontal reflective multiplexer replicates the input beam along a first dimension to form a first multiplexed beam. The vertical reflective multiplexer replicates the first multiplexed beam along a second dimension to form a second multiplexed beam. In one example, the horizontal reflective multiplexer includes a first beam splitter, second beam splitter, and mirror. The vertical reflective multiplexer includes a beam splitter and mirror.

Abstract: A gas shield assembly for protecting an exposed surface of an injector in a chemical vapor deposition system. The shield assembly includes a back wall which supports perforated sheets to define a plenum. The sheets are held in place by endcaps. A conduit delivers gas to the plenum. The conduit includes a stretch extending along the back wall and has a bend adjacent the ends of the back wall. The conduit includes perforations along the stretch and at the bends to provide substantially uniform flow of gas into the plenum and the ends.

Abstract: An apparatus for heat treatment of a wafer is disclosed. The apparatus includes a heating chamber having a heat source. A cooling chamber is positioned adjacent to the heating chamber and includes a cooling source. A wafer holder is configured to move between the cooling chamber and the heating chamber through a passageway and one or more shutters defines the size of the passageway. The one or more shutters are movable between an open position where the wafer holder can pass through the passageway and an obstructing position which defines a passageway which is smaller than the passageway defined when the shutter is in the open position.

Abstract: A method of chemical mechanical polishing of a metal damascene structure which includes an insulation layer having trenches on a wafer and a metal layer having a lower portion located in trenches of the insulation layer and an upper portion overlying the lower portion and the insulation layer is provided. The method comprises a first step of planarizing the upper portion of the metal layer and a second step of polishing the insulation layer and the lower portion of the metal layer. In the first step of planarizing the upper portion of the metal layer, the wafer and a polishing pad is urged at an applied pressure p and a relative velocity v in a contact mode between the wafer and the polishing pad to promote an increased metal removal rate. In the second, the insulation layer and the lower portion of the metal layer are polished in a steady-state mode to form individual metal lines in the trenches with minimal dishing of the metal lines and overpolishing of the insulation layer.

Abstract: A flexible chuck for supporting a substrate during lithographic processing is described. This flexible chuck includes an electrode layer, a piezoelectric layer disposed on the electrode layer, and a substrate support layer disposed above the piezoelectric layer. By providing electrical signals to the piezoelectric layer through the electrode layer, the support layer can be flexed, thereby changing surface topography on a substrate disposed on the flexible chuck. The contact layer can include projections, each of the projections corresponding to a respective electrode within the electrode layer. Furthermore, the substrate support layer can be formed of a conductive material and thus serve as the ground layer. Alternatively, separate substrate support and ground layers can be provided. The flexible chuck in accordance with the instant invention can be a vacuum chuck. Also described is a method of monitoring topographic changes in a flexible chuck in accordance with the instant invention.

Abstract: The present invention relates to an illumination system including an illumination source, a beam conditioner placed in an optical path with the illumination source, a first diffractive array, a condenser system and a second diffractive array. The illumination source directs light through the beam conditioner onto the first diffractive array. The light is then directed to the condenser system placed in an optical path between the first diffractive array and second diffractive array. The condenser system includes a plurality of stationary optical elements and a plurality of movable optical elements. The plurality of movable optical elements are placed in an optical path with the plurality of stationary optical elements. The movable optical elements are capable of translation between the plurality of stationary optical element to zoom the light received from the first diffractive array.

Abstract: An in-situ, two step or combination, method and system for cleaning of semiconductor manufacturing equipment is provided. The present invention utilizes two separate fluorine based chemistries in each step which selectively target the removal of different types of deposits that build up on the equipment surfaces. In particular, powdery and dense film-like solid deposits, as well as a combination of both, build up on the chamber surfaces and associated equipment components. These two types of deposits are removed selectively by the present invention. Such selective targeting of combined cleaning steps, yields an improved cleaning technique. In another embodiment, the method and system of the present invention provides for cleaning of the chamber and associated equipment using separate steps with different chemicals, and then performing these steps in a variety of desired sequences.

Abstract: A protective shield and system for gas distribution are provided for reducing film and process byproduct deposition on surfaces of a Chemical Vapor Deposition system. In one embodiment, the present invention provides a volume insert within the inert gas shield plenum which reduces byproduct deposition buildup on the shield. In another embodiment, the present invention provides vent guide for directing gaseous deposition byproducts to the center of a vent passageway, thus reducing particle deposits on the walls of the vent system. In another embodiment the present invention provides partial plugs installed in the injector purge passageway for the purpose of redirecting and metering inert gas, thus reducing byproduct deposition on the shield and at the ends of the injectors. In another embodiment, the present invention provides a CVD system having a full volume vent assembly with a large capacity for powder buildup, thereby enhancing the runtime before cleaning maintenance is required.

Abstract: A wafer handling device includes a platform having a plurality of movable grippers. A driver is mounted on the platform and selectively couples to at least one of the plurality of grippers to selectively move at least one of the plurality of grippers with regard to the platform. The driver may be magnetically coupled to at least one gripper to move it between a first proximal position and a first distal position. The driver may be mounted on the platform with a track assembly that effectuates a linear magnetic propulsion field to move the driver between the first axial position and the second axial position.

Abstract: A chemical vapor deposition (CVD) apparatus is provided. The CVD apparatus comprises a deposition chamber and a main chamber. The deposition chamber comprises at least one single injector and one or more exhaust channels. The main chamber supports the deposition chamber and includes at least one gas inlet to inject at least one gas into the main chamber. The gases are removed through the exhaust channels, thereby creating an inwardly flowing purge which acts to isolate the deposition chamber. At least one semi-seal is formed between the deposition chamber and the substrate which acts to confine reactive chemicals within each deposition region.

Abstract: An apparatus for heat treatment of a wafer is disclosed. The apparatus includes a heating chamber having a heat source. A cooling chamber is positioned adjacent to the heating chamber and includes a cooling source. A wafer holder is configured to move between the cooling chamber and the heating chamber through a passageway and one or more shutters defines the size of the passageway. The one or more shutters are movable between an open position where the wafer holder can pass through the passageway and an obstructing position which defines a passageway which is smaller than the passageway defined when the shutter is in the open position.

Abstract: The present invention describes systems and methods for exposure and removal of material on the periphery of a substrate. The system includes an emitting radiation or exposure source, preferably a guide such as an optical assembly and an emitter, an edge detector, a transport, which comprise rotating and radial mechanisms, and a substrate support. The optical assembly directs radiation from the exposure source to the wafer or emitter. The transport supports the emitter and the edge detector about the substrate, and a tracking exposure head preferably supports the emitter and edge detector. As the emitter moves along the periphery of the substrate, the edge detector sends signals to control systems, which process signals, and command the transport to adjust the position of the emitter when necessary to expose the periphery of the substrate. In another embodiment, the system provides an exposure source chamber, a process chamber, and optionally a control chamber to isolate particle and thermal problems.

Abstract: A method and apparatus for maintaining a purged optical gap between a pellicle and a reticle in a photolithography system is described. A porous frame between a reticle and a pellicle maintains the purged optical gap. A porous frame includes a first and a second opposing surface. The first opposing surface defines a first opening, and is configured to mate with the pellicle. The second opposing surface defines a second opening, and is configured to mate with the reticle to enclose the optical gap between the pellicle and the reticle. A gas supply interface infuses a purge gas through the porous frame and into the gap.

Abstract: The present invention provides a method and system for determining three-dimensional refractive gradient index distribution. The method and system of the present invention determine inhomogeneity data and calculate index of refraction changes in three-dimensions (3D). The method and system provide 3D modeling of an optical object or system that determines the three-dimensional distribution of the refractive index in the object. In one embodiment, the optical object is a blank. In different embodiments, the optical system is more than one blank. In alternative embodiments, the optical system can be a projection optics system that can include optical components such as lenses, filters, plates, and prisms. The present invention also provides a method for selecting a plurality of preferred optical elements to assemble a composite optical system with predetermined parameters.

Abstract: An apparatus for heat treatment of a wafer is disclosed. The apparatus includes a heating chamber having a heat source. A cooling chamber is positioned adjacent to the heating chamber and includes a cooling source. A wafer holder is configured to move between the cooling chamber and the heating chamber through a passageway and one or more shutters defines the size of the passageway. The one or more shutters are movable between an open position where the wafer holder can pass through the passageway and an obstructing position which defines a passageway which is smaller than the passageway defined when the shutter is in the open position.

Abstract: A chemical vapor deposition (CVD) system is provided for processing a substrate 110. The system 100 includes a heated muffle 115, a chamber 120 having an injector assembly 130 for introducing chemical vapor to process the substrate 110, and a belt 105 for moving the substrate through the muffle and chamber. The belt 105 has an oxidation-resistant coating 175 to reduce formation of deposits thereon. The coating 175 is particularly useful for resisting formation of chromium oxides on belts made from a chromium-containing alloy. In one embodiment, the oxidation-resistant coating 175 comprises a securely-adhered oxide layer 185 that is substantially free of transition metals. Preferably, the oxidation-resistant coating 175 comprises aluminum oxide. More preferably, the coating 175 comprises an aluminum oxide layer 185 securely adhered over a nickel aluminide layer 180.

Abstract: A method and apparatus for providing in-situ monitoring of the removal of materials in localized regions on a semiconductor wafer or substrate during chemical mechanical polishing (CMP) is provided. In particular, the method and apparatus of the present invention provides for detecting the differences in reflectance between the different materials within certain localized regions or zones on the surface of the wafer. The differences in reflectance are used to indicate the rate or progression of material removal in each of the certain localized zones.

Abstract: This invention relates to an apparatus for optical beam shaping and diffusing, a method for making the apparatus, and a method for using the apparatus. The apparatus comprises a crystalline material object shaped to fit within an optical train and with a pattern of surface texture along an optical path. Surface removal processes are applied to a portion of a surface of an object made of a crystalline material to form a surface texture pattern at that portion of the surface of the object. The surface texture pattern depends upon: (1) the identity of the crystalline material and (2) the orientation of crystal lattice axes within the object with respect to the portion of the surface of the object where the pattern of surface texture is to be formed. Processes for making the apparatus include, but are not limited to, mechanical grinding, ablating, chemical etching, plasma etching, ion milling, and combinations thereof.