Abstract: A system and method for bidirectionally based electrical information storage, processing and communication. Bidirectional memory (tristate) offers the capability to store and interpret multiple bits (Shannon's) of information per memory cell, for structures such as dynamic random-access memory (DRAM), and read-only memory (ROM), and communication circuits, for operation, rather than traditional memory able to store a single “bit” (Shannon) of information per cell. Where, instead of traditional memory cells capable of two possible states (binary digit) and a single defined bit (1 Shannon), bidirectional memory is capable of three states (tristate), where the third information representing state can be a specifically defined state capable of representing multiple bits (multiple Shannon's) for each individual cell, which may be defined to represent a specific sequence of bits (sequence of Shannon's).

Abstract: A system and method utilizing deflective conversion for increasing the energy efficiency of a charging circuit utilizing electrostatic storage devices, different circuit configurations composing a group termed deflection converters. Methods of deflection converter operation and construction include autonomous voltage controlled operation, current and or voltage measurement based control, timing based control, both passive and active devices and used in circuits of both alternating and direct current enabling charging efficiency up to 100% with instantaneous charging.