Patents Assigned to ATTO Co., Ltd.
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Publication number: 20110034036Abstract: Provided is a method of manufacturing a semiconductor device. In the method, after a thin liner is formed on a substrate on which a lower interconnection is formed, a silicon source is supplied to form a silicide layer under the liner by a reaction between the silicon source and the lower interconnection, and the silicide layer is nitrided and an etch stop layer is formed. Therefore, the lower interconnection is prevented from making contact with the silicon source, variations of the surface resistance of the lower interconnection can be prevented, and thus high-speed devices can be fabricated.Type: ApplicationFiled: July 28, 2010Publication date: February 10, 2011Applicant: ATTO CO., LTD.Inventor: Young Soo Kwon
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Publication number: 20110021035Abstract: Provided are a deposition apparatus and a method of manufacturing a semiconductor device. In the method, a reaction chamber provided with a gaseous source supply unit and a liquid source supply unit is prepared, and an etch stop layer is formed on a substrate by using a gaseous source. Then, an interlayer insulation layer is formed on the etch stop layer by using a vaporized liquid source and a vaporized dopant source. In this way, the etch stop layer and the interlayer insulation layer are formed in-situ in the same reaction chamber.Type: ApplicationFiled: July 23, 2010Publication date: January 27, 2011Applicant: ATTO CO., LTD.Inventors: Young Soo KWON, Kyoung Pil NA, Seok Jong HYUN
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Publication number: 20080260968Abstract: A method of forming an amorphous carbon layer using a cross type hydrocarbon compound as a precursor and a method of forming a low-k dielectric layer using the same are disclosed. The present invention includes a step (a) of vaporizing a precursor containing a cross type hydrocarbon compound, a step (b) of supplying the vaporized precursor and a additive gas into a reaction chamber via a shower head, wherein the precursor and the additive gas are changed into plasma state, and a step (c) of depositing the amorphous carbon layer for the hard mask or the low-k dielectric in the reaction chamber.Type: ApplicationFiled: October 2, 2007Publication date: October 23, 2008Applicant: ATTO CO., LTD.Inventors: Kyung Soo KIM, Geun Hag BAE, Ho Sik KIM
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Publication number: 20070221129Abstract: An atomic layer deposition (ALD) apparatus using a gas separation type showerhead is provided. Accordingly, the ALD apparatus that employs the gas separation type showerhead including a gas supply module, a gas separation module, and a gas injection module. The ALD apparatus includes: a first precursor source storing the first precursor, which is connected to the outer supply tube; a second precursor source storing the second precursor, which is connected to the inner supply tube; a purge gas source storing a purge gas, which is connected to the outer and inner supply tubes; a power source which applies power for ionization to the gas separation module; and an exhaust unit which exhausts remaining materials of the reaction chamber.Type: ApplicationFiled: March 9, 2007Publication date: September 27, 2007Applicant: ATTO CO., LTDInventors: Guen Hag Bae, Kyung Soo Kim, Ho Sik Kim
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Publication number: 20070209686Abstract: An apparatus for cleaning an inside of a chamber using a gas separation type showerhead is provided. The apparatus includes: a gas supply module through which first and second gases are separately supplied; a gas separation module through which the first and second gases are separately dispersed; and a gas injection module that includes a plurality of holes through which the separately dispersed first and second gases are commonly injected into the chamber, wherein at least one gas of the first and second gases includes an ionized first cleaning gas including a gas containing fluorine (F) ingredient, and wherein at least one gas of the first and second gases includes a non-ionized second cleaning gas including nitrogen oxide based gas (NxOy, x and y are integers equal to or more than 1).Type: ApplicationFiled: March 7, 2007Publication date: September 13, 2007Applicant: ATTO CO., LTD.Inventors: Guen Hag BAE, Kyung Soo KIM, Ho Sik KIM, Young Bea YUN, Duck Jin KIM, Nae Eung LEE
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Publication number: 20070163440Abstract: Provided is a gas separation type showerhead for effective energy supply. The gas separation type showerhead includes: a gas supply module to which a first gas and a second gas are separately supplied; a gas separation module in which the supplied first and second gases are separately dispersed; and a gas injection module which is a multi-hollow cathode having a plurality of holes and in which the first and second gases separately dispersed are ionized in the holes to be commonly dispersed.Type: ApplicationFiled: January 19, 2007Publication date: July 19, 2007Applicant: ATTO CO., LTD.Inventors: Kyung Kim, Guen Bae, Ho Kim
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Publication number: 20040196636Abstract: The light emitting diode assembly for an illuminated sign discloses an enhanced waterproofs function and an enhanced durability. The light emitting diode assembly includes a case being open upwards, in which a connecting recess is formed on upper portions of both sides of the case. A printed circuit board is installed in the case and being mounted on upper sides of a plurality of light emitting diodes. The hollow cap is coupled in the connecting recess of the case, in which a plurality of wires passes through the cap. A synthetic resin material for covering the printed circuit board, the cap and the light emitting diode, the synthetic resin material being filled in the case. In this structure, the light emitting diode assembly can prevent the printed circuit board, transformer and the light emitting diode from being damaged by using an epoxy resin.Type: ApplicationFiled: August 27, 2003Publication date: October 7, 2004Applicant: ATTO Co., Ltd.Inventor: Sun-Tai Kim