Abstract: The present invention relates to a vertical cavity surface emitting laser (VCSEL) and a manufacturing method thereof, and more specifically, to a high-efficiency oxide VCSEL which emits laser beams having a peak wavelength of 860 nm, and a manufacturing method thereof.
Abstract: The present invention relates to a vertical cavity surface emitting laser (VCSEL) and a manufacturing method thereof, and more specifically, to a high-efficiency oxidized vertical cavity surface emitting laser for emitting laser light having a peak wavelength of 860 nm, and a manufacturing method thereof. The vertical cavity surface emitting laser according to the present invention includes a current diffusion layer having a high doping region at least in a portion between an upper electrode and a lower distributed Bragg reflector.
Abstract: The present invention relates to a vertical cavity surface emitting laser (VCSEL) and a manufacturing method thereof, and more specifically, to a high-efficiency oxide VCSEL which emits laser beams having a peak wavelength of 860 nm, and a manufacturing method thereof.
Abstract: The present invention relates to a vertical cavity surface emitting laser (VCSEL) and a manufacturing method thereof, and more specifically, to a high-efficiency oxidation VCSEL which emits laser beams having a peak wavelength of 860 nm, and a manufacturing method thereof.
Abstract: The present invention relates to an infrared light emitting diode and a manufacturing method thereof, and more specifically, to a 1,000 nm infrared light emitting diode with improved light emitting efficiency through compensation of strain, and a manufacturing method thereof.
Abstract: The present invention relates to a light emitting diode and a method for manufacturing same, and more specifically relates to growing a GaN layer of high quality on an upper part of an AlGaInP-based light emitting diode to improve the light extraction efficiency of the light emitting diode, wherein the GaN layer has a larger band gap and a smaller refractive index than AlGaInP-based material. The AlGaInP-based light emitting diode of the present invention is characterized by forming the GaN layer on the upper surface, and the GaN layer preferably has a surface of a fine uneven pattern. The GaN layer can be grown in the same system after forming the AlGaInP-based light emitting diode without an additional process.
Type:
Grant
Filed:
January 29, 2014
Date of Patent:
August 13, 2019
Assignee:
AUK CORP.
Inventors:
Hyung Joo Lee, Young Jin Kim, In Kyu Jang
Abstract: The present invention relates to a light emitting diode and a method for manufacturing same, and more specifically relates to growing a GaN layer of high quality on an upper part of an AlGaInP-based light emitting diode to improve the light extraction efficiency of the light emitting diode, wherein the GaN layer has a larger band gap and a smaller refractive index than AlGaInP-based material. The AlGaInP-based light emitting diode of the present invention is characterized by forming the GaN layer on the upper surface, and the GaN layer preferably has a surface of a fine uneven pattern. The GaN layer can be grown in the same system after forming the AlGaInP-based light emitting diode without an additional process.
Type:
Application
Filed:
January 29, 2014
Publication date:
December 22, 2016
Applicant:
AUK CORP
Inventors:
Hyung Joo LEE, Young Jin KIM, In Kyu JANG
Abstract: The present invention relates to a high-efficiency AlGaInP light-emitting diode directly grown on a transparent substrate and a method of manufacturing the same, and, more particularly, to a high-efficiency AlGaInP light-emitting diode grown on a sapphire substrate and a method of manufacturing the same. According to the present invention, an AlGaInP light-emitting diode is manufactured using an inexpensive sapphire substrate having high transmittance to ultraviolet rays, infrared rays and visible rays. The AlGaInP light-emitting diode according to the present invention can emit light with high efficiency because a lower substrate does not absorb light, and can be effectively manufactured because a process of removing a GaAs or a process of bonding a sapphire substrate is not conducted.