Patents Assigned to Axon Technologies Corporation
  • Resistive memory device with ramp-up/ramp-down program/erase pulse
    Patent number: 9734902
    Abstract: In one embodiment, a method of operating a resistive switching device includes applying a signal comprising a pulse on a first terminal of a two terminal resistive switching device having the first terminal and a second terminal. The resistive switching device has a first state and a second state. The pulse includes a first ramp from a first voltage to a second voltage over a first time period. The first time period is at least 0.1 times a total time period of the pulse.
    Type: Grant
    Filed: September 22, 2015
    Date of Patent: August 15, 2017
    Assignees: Adesto Technologies Corporation, Axon Technologies Corporation
    Inventors: Deepak Kamalanathan, Foroozan Sarah Koushan, Juan Pablo Saenz Echeverry, John Dinh, Shane C. Hollmer, Michael Kozicki
  • Method of operating a resistive memory device with a ramp-up/ramp-down program/erase pulse
    Patent number: 9165644
    Abstract: In one embodiment, a method of operating a resistive switching device includes applying a signal comprising a pulse on a first terminal of a two terminal resistive switching device having the first terminal and a second terminal. The resistive switching device has a first state and a second state. The pulse includes a first ramp from a first voltage to a second voltage over a first time period. The first time period is at least 0.1 times a total time period of the pulse.
    Type: Grant
    Filed: May 11, 2012
    Date of Patent: October 20, 2015
    Assignees: Axon Technologies Corporation, Adesto Technologies Corporation
    Inventors: Deepak Kamalanathan, Foroozan Sarah Koushan, Juan Pablo Saenz Echeverry, John Dinh, Shane C. Hollmer, Michael Kozicki
  • Resistive Devices and Methods of Operation Thereof
    Publication number: 20130301337
    Abstract: In one embodiment, a method of operating a resistive switching device includes applying a signal comprising a pulse on a first terminal of a two terminal resistive switching device having the first terminal and a second terminal. The resistive switching device has a first state and a second state. The pulse includes a first ramp from a first voltage to a second voltage over a first time period. The first time period is at least 0.1 times a total time period of the pulse.
    Type: Application
    Filed: May 11, 2012
    Publication date: November 14, 2013
    Applicants: Axon Technologies Corporation, Adesto Technologies Corporation
    Inventors: Deepak Kamalanathan, Foroozan Sarah Koushan, Juan Pablo Saenz Echeverry, John Dinh, Shane C. Hollmer, Michael Kozicki
  • Programmable metallization cell structure including an integrated diode, device including the structure, and method of forming same
    Patent number: 8218350
    Abstract: A microelectronic programmable structure suitable for storing information and array including the structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying energy to the structure, and thus information may be stored using the structure.
    Type: Grant
    Filed: September 9, 2011
    Date of Patent: July 10, 2012
    Assignee: Axon Technologies Corporation
    Inventor: Michael N. Kozicki
  • Microelectronic programmable device and methods of forming and programming the same
    Patent number: 8213217
    Abstract: A microelectronic programmable structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying a bias across the electrodes, and thus information may be stored using the structure.
    Type: Grant
    Filed: April 19, 2011
    Date of Patent: July 3, 2012
    Assignee: Axon Technologies Corporation
    Inventor: Michael N. Kozicki
  • Optimized solid electrolyte for programmable metallization cell devices and structures
    Patent number: 8213218
    Abstract: A microelectronic programmable structure suitable for storing information and array including the structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying energy to the structure, and thus information may be stored using the structure.
    Type: Grant
    Filed: September 20, 2011
    Date of Patent: July 3, 2012
    Assignee: Axon Technologies Corporation
    Inventor: Michael N. Kozicki
  • Programmable metallization cell structure including an integrated diode, device including the structure, and method of forming same
    Patent number: 8134140
    Abstract: A microelectronic programmable structure suitable for storing information and array including the structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying energy to the structure, and thus information may be stored using the structure.
    Type: Grant
    Filed: September 30, 2010
    Date of Patent: March 13, 2012
    Assignee: Axon Technologies Corporation
    Inventor: Michael N. Kozicki
  • OPTIMIZED SOLID ELECTROLYTE FOR PROGRAMMABLE METALLIZATION CELL DEVICES AND STRUCTURES
    Publication number: 20120014165
    Abstract: A microelectronic programmable structure suitable for storing information and array including the structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying energy to the structure, and thus information may be stored using the structure.
    Type: Application
    Filed: September 20, 2011
    Publication date: January 19, 2012
    Applicant: AXON TECHNOLOGIES CORPORATION
    Inventor: Michael N. Kozicki
  • PROGRAMMABLE METALLIZATION CELL STRUCTURE INCLUDING AN INTEGRATED DIODE, DEVICE INCLUDING THE STRUCTURE, AND METHOD OF FORMING SAME
    Publication number: 20110315947
    Abstract: A microelectronic programmable structure suitable for storing information and array including the structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying energy to the structure, and thus information may be stored using the structure.
    Type: Application
    Filed: September 9, 2011
    Publication date: December 29, 2011
    Applicant: AXON TECHNOLOGIES CORPORATION
    Inventor: Michael N. Kozicki
  • Optimized solid electrolyte for programmable metallization cell devices and structures
    Patent number: 8022384
    Abstract: A microelectronic programmable structure suitable for storing information and array including the structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying energy to the structure, and thus information may be stored using the structure.
    Type: Grant
    Filed: May 29, 2009
    Date of Patent: September 20, 2011
    Assignee: Axon Technologies Corporation
    Inventor: Michael N Kozicki
  • MICROELECTRONIC PROGRAMMABLE DEVICE AND METHODS OF FORMING AND PROGRAMMING THE SAME
    Publication number: 20110194339
    Abstract: A microelectronic programmable structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying a bias across the electrodes, and thus information may be stored using the structure.
    Type: Application
    Filed: April 19, 2011
    Publication date: August 11, 2011
    Applicant: AXON TECHNOLOGIES CORPORATION
    Inventor: Michael N. Kozicki
  • Microelectronic programmable device and methods of forming and programming the same
    Patent number: 7929331
    Abstract: A microelectronic programmable structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying a bias across the electrodes, and thus information may be stored using the structure.
    Type: Grant
    Filed: February 5, 2010
    Date of Patent: April 19, 2011
    Assignee: Axon Technologies Corporation
    Inventor: Michael N. Kozicki
  • Method for making a tunable cantilever device
    Patent number: 7763158
    Abstract: Mass distribution within programmable surface control devices is controlled by the presence or absence of an electrodeposition of metal and/or metal ions from a solid solution upon application of a suitable electric field. One such programmable surface control device includes a tunable cantilever assembly whose resonant frequency is changed by depositing and dissolving an electrodeposit on a surface of the assembly using an electric field.
    Type: Grant
    Filed: February 14, 2006
    Date of Patent: July 27, 2010
    Assignee: Axon Technologies Corporation
    Inventor: Michael N Kozicki
  • MICROELECTRONIC PROGRAMMABLE DEVICE AND METHODS OF FORMING AND PROGRAMMING THE SAME
    Publication number: 20100135071
    Abstract: A microelectronic programmable structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying a bias across the electrodes, and thus information may be stored using the structure.
    Type: Application
    Filed: February 5, 2010
    Publication date: June 3, 2010
    Applicant: AXON TECHNOLOGIES CORPORATION
    Inventor: Michael N. Kozicki
  • Programmable metallization cell structures including an oxide electrolyte, devices including the structure and method of forming same
    Patent number: 7728322
    Abstract: A microelectronic programmable structure suitable for storing information, a device including the structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an oxide ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying energy to the structure, and thus information may be stored using the structure.
    Type: Grant
    Filed: May 12, 2008
    Date of Patent: June 1, 2010
    Assignee: Axon Technologies Corporation
    Inventor: Michael N. Kozicki
  • PRINTABLE IONIC STRUCTURE AND METHOD OF FORMATION
    Publication number: 20100092656
    Abstract: An ionic structure, including a plurality of electrodes and an ion conductor, wherein at least one of the electrodes and the ion conductor is formed using a printing technique and a method of forming and using the structure are disclosed. Electrical properties of the structure may be altered by applying energy to the structure, and thus information may be stored using the structure. The structure may also be used to form an electrical connection within portions of a device and/or between devices.
    Type: Application
    Filed: October 9, 2009
    Publication date: April 15, 2010
    Applicant: AXON TECHNOLOGIES CORPORATION
    Inventor: Michael N. Kozicki
  • Microelectric programmable device and methods of forming and programming the same
    Patent number: 7675766
    Abstract: A microelectronic programmable structure and methods of forming and programming the structure are disclosed. The programmable structure generally include an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying a bias across the electrodes, and thus information may be stored using the structure.
    Type: Grant
    Filed: July 1, 2008
    Date of Patent: March 9, 2010
    Assignee: Axon Technologies Corporation
    Inventor: Michael N Kozicki
  • OPTIMIZED SOLID ELECTROLYTE FOR PROGRAMMABLE METALLIZATION CELL DEVICES AND STRUCTURES
    Publication number: 20090283740
    Abstract: A microelectronic programmable structure suitable for storing information and array including the structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying energy to the structure, and thus information may be stored using the structure.
    Type: Application
    Filed: May 29, 2009
    Publication date: November 19, 2009
    Applicant: AXON TECHNOLOGIES CORPORATION
    Inventors: Michael N. Kozicki, Muralikrishnan Balakrishnan, Maria Mitkova
  • Optimized solid electrolyte for programmable metallization cell devices and structures
    Patent number: 7560722
    Abstract: A microelectronic programmable structure suitable for storing information and array including the structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying energy to the structure, and thus information may be stored using the structure.
    Type: Grant
    Filed: June 10, 2008
    Date of Patent: July 14, 2009
    Assignee: Axon Technologies Corporation
    Inventor: Michael N Kozicki
  • PROGRAMMABLE METALLIZATION CELL STRUCTURES INCLUDING AN OXIDE ELECTROLYTE, DEVICES INCLUDING THE STRUCTURE AND METHOD OF FORMING SAME
    Publication number: 20080272360
    Abstract: A microelectronic programmable structure suitable for storing information, a device including the structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an oxide ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying energy to the structure, and thus information may be stored using the structure.
    Type: Application
    Filed: May 12, 2008
    Publication date: November 6, 2008
    Applicant: AXON TECHNOLOGIES CORPORATION
    Inventor: Michael N. Kozicki