Abstract: The present invention relates to a nanocluster liquid dispersion where nanoclusters with a predetermined number of atoms are dispersed.

Abstract: An object of the invention is to reduce sizes of an inert gas supply and exhaust devices used for a pulse sputtering device. Another object is to efficiently supply suitable quantity of the inert gas to a place where the inert gas is required in the pulse sputtering device. Therefore, a provided pulse sputtering device has a sputtering source that performs pulse discharge and generates plasma, a gas injection valve that injects and supplies an inert gas to the sputtering source and a controller that controls the sputtering source and the gas injection valve. The controller controls the sputtering source and the gas injection valve such that the gas injection valve injects the inert gas intermittently and such that a part of a period, in which the pulse discharge occurs in the sputtering source, overlaps with a part of a period, in which the gas injection valve injects and supplies the inert gas.

Abstract: Improvement of control of size and structure of nanoclusters with a nanocluster production apparatus is intended. Increase of an obtained amount and a yield of nanoclusters having size and structure, at least one of which is selected, is intended. A nanocluster production apparatus has a vacuum chamber, a sputtering source that generates plasma by pulse discharge, a pulse power supply that supplies a pulsed power to the sputtering source, a first inert gas supply device that supplies a first inert gas to the sputtering source, a cluster growth cell stored in the vacuum chamber and a second inert gas introduction device that introduces a second inert gas into the cluster growth cell.

Abstract: The present invention relates to a nanocluster liquid dispersion where nanoclusters with a predetermined number of atoms are dispersed.

Abstract: Provided are a method and a device that can measure sputtered particles discharged by sputtering with high precision within a short time. A measuring device has a measuring section that measures a ratio between an equivalent value of the number of ion particles discharged from a target by sputtering caused by a pulsed electric discharge and an equivalent value of the number of neutral particles discharged from the target by the pulsed electric discharge. The ratio between the number of the ion particles and the number of the neutral particles discharged from the target by the sputtering can be regarded as one of factors affecting quality of a vapor-deposited film, a film growth rate and an etching rate. Thus, a factor affecting the quality of the vapor-deposited film, the film growth rate and the etching rate can be grasped and also controlled.

Abstract: Improvement of control of size and structure of nanoclusters with a nanocluster production apparatus is intended. Increase of an obtained amount and a yield of nanoclusters having size and structure, at least one of which is selected, is intended. A nanocluster production apparatus has a vacuum chamber, a sputtering source that generates plasma by pulse discharge, a pulse power supply that supplies a pulsed power to the sputtering source, a first inert gas supply device that supplies a first inert gas to the sputtering source, a cluster growth cell stored in the vacuum chamber and a second inert gas introduction device that introduces a second inert gas into the cluster growth cell.