Abstract: An apparatus and method is disclosed for providing vapor-phase epitaxial growth on a substrate using a Metal Organic Chemical Vapor Deposition (MOCVD) process. The process is performed in a reactive chamber pressurized to greater than one atmosphere. The reactant gases to be deposited on the substrate are also pressurized to the equivalent pressure, and then introduced into the reactor chamber. By performing the MOCVD process at a pressure greater than one atmosphere, a reduced amount of reactant gas is required to complete the deposition process.