Abstract: An apparatus for processing, finishing, and planarizing is disclosed. A methods of processing are disclosed. New methods of control for processing are disclosed. The methods and apparatus, can help improve yield and lower the cost of manufacture for planarizing of workpieces having extremely close tolerances such as semiconductor wafers. Cost of manufacture parameters are used for control. Methods to determine preferred changes to process control parameters are disclosed. Use of a model for improving manufacture, cost of manufacture, and profitability is discussed.

Abstract: A factory, an apparatus, and methods of using an in situ finishing information for finishing workpieces and semiconductor wafers are described. Changes or improvements to cost of manufacture of a workpiece using in-process cost of manufacture information, tracked in-process cost of manufacture information, or cost of manufacture parameters are discussed. Appreciable changes to quality or cost of manufacture of a workpiece using tracking, using in-process tracked information, networks including a multiplicity of apparatus, and using in situ finishing information are discussed. A factory, apparatus, and methods to change or improve process control are discussed. A factory, apparatus, and methods to change or improve real-time process control are discussed. A factory, apparatus, and methods to change or improve predictive control are discussed. The workpieces can be tracked individually or by process group such as a process batch.

Abstract: Methods of refining using a plurality of refining elements are discussed. A refining apparatus having refining elements that can be smaller than the workpiece being refined are disclosed. New refining methods, refining apparatus, and refining elements disclosed. Methods of refining using frictional refining, chemical refining, tribochemical refining, and electrochemical refining and combinations thereof are disclosed. A refining apparatus having magnetically responsive refining elements that can be smaller than the workpiece being refined are disclosed. The refining apparatus can supply a parallel refining motion to the refining element(s) for example through magnetic coupling forces. The refining apparatus can supply multiple different parallel refining motions to multiple different refining elements for example solely through magnetic coupling forces to improve refining quality and versatility. A refining chamber can be used. New methods of control are refining disclosed.

Abstract: An apparatus and method of using an in situ finishing information for finishing workpieces and semiconductor wafers are described. The method uses operative sensors such as friction sensors for detecting and improving control during finishing. The method can aid control of finishing while using in situ finishing information and cost of manufacture information. The method can aid control of finishing while using organic lubricants, lubricating films, and lubricating boundary layers in the operative finishing interface. The method can generally aid control of differential finishing such as when using differential lubricating films such as lubricating boundary layers. Control can generally aid improvement of differential finishing of workpieces such as semiconductor wafers. Planarization and localized finishing can be used with in situ finishing information such as differential lubricating boundary layer(s) for finishing.

Abstract: An apparatus and method of using a in situ finishing information for finishing semiconductor wafers is described. The method uses operative sensors such as friction sensors for detecting and improving control during finishing. The method can aid control of finishing while using in situ finishing information and cost of manufacture information. The method can aid control of finishing while using organic lubricants, lubricating films, and lubricating boundary layers in the operative finishing interface. The method can generally aid control of differential finishing such as when using differential lubricating films such as lubricating boundary layers. Control can generally aid improvement of differential finishing of semiconductor wafers. Planarization and localized finishing can used with in situ finishing information such as differential lubricating boundary layer for finishing. Defects can generally be reduced using the in situ friction finishing information method.

Abstract: An apparatus for planarizing is disclosed. A method of planarizing is disclosed. Methods of planarizing using frictional planarizing, chemical planarizing, tribochemical planarizing, CVD planarizing, and electrochemical planarizing and combinations thereof are disclosed. A planarizing chamber can be used. New methods of control are planarizing disclosed. The new planarizing methods and apparatus, can help improve yield and lower the cost of manufacture for planarizing of workpieces having extremely close tolerances such as semiconductor wafers. Cost of manufacture parameters are used for control. Methods to determine preferred changes to process control parameters are disclosed. Cost of manufacture models can be used and are disclosed. Process models can be used and are disclosed. A method to use business calculations combined with physical measurements to improve control is discussed. Use of business calculations to change the cost of finishing semiconductor wafers is discussed.

Abstract: A refining apparatus having magnetically responsive refining elements that can be smaller than the workpiece being refined are disclosed. The refining apparatus can supply a parallel refining motion to the refining element(s) through magnetic coupling forces. The refining apparatus can supply multiple different parallel refining motions to multiple different refining elements solely through magnetic coupling forces to improve refining quality and versatility. New refining methods, refining apparatus, and refining elements disclosed. Methods of refining using frictional refining, chemical refining, tribochemical refining, and electrochemical refining and combinations thereof are disclosed. A refining chamber can be used. New methods of control are refining disclosed. The new magnetic refining methods, apparatus, and magnetically responsive refining elements can help improve yield and lower the cost of manufacture for refining of workpieces having extremely close tolerances such as semiconductors wafers.

Abstract: A method of in situ control for finishing semiconductor wafers to improve cost of ownership is discussed. A method to use business calculations combined with physical measurements to improve control is discussed. The use of lubricating layer control in the operative finishing interface is discussed. Use of business calculations to change the cost of finishing semiconductor wafers is discussed. The method aids control of differential lubricating films and improved differential finishing of semiconductor wafers. The method aids cost of manufacture forecasting. The method can help manage and/or reduce cost of manufacture for pre-ramp-up, ramp-up, and commercial manufacture of the workpieces. The method can aid cost of manufacture forecasting for pre-ramp-up, ramp-up, and commercial manufacture of the workpieces. The method can aid process control for pre-ramp-up, ramp-up, and commercial manufacture of workpieces. Activity based accounting can be preferred for some applications.

Abstract: A method of using a finishing element and using organic lubricating films for finishing semiconductor wafers is described. The lubricants in the finishing element can be transferred to operative finishing interface and can form a self-assembling lubricating film. The organic lubricating film thickness can be controlled to improve finishing and reduce unwanted surface defects. Differential organic lubricating film methods are described to differentially finish semiconductor wafers. Planarization and localized finishing can be improved using differential lubricating boundary layer and organic lubricating film methods of finishing.

Abstract: An apparatus and method of using a friction detectors for finishing semiconductor wafers is described. The method uses friction sensors for detecting and improving control during finishing. The method can aid control of finishing while using lubricating films, preferably lubricating boundary layers, in the operative finishing interface. The method can generally aid control of differential lubricating films such as lubricating boundary layers and improve differential finishing of semiconductor wafers. Planarization and localized finishing can be improved using differential lubricating boundary layer methods of finishing. Defects can be reduced using the in situ friction detector method. Real time improvements to cost of manufacture semiconductor wafer manufacture can be made by tracking and using current in process cost of manufacture parameters. The semiconductor wafers can be tracked individually or by process group such as a process batch. Abrasive finishing surfaces can be used.

Abstract: A refining apparatus having magnetically responsive refining elements that can be smaller than the workpiece being refined are disclosed. The refining apparatus can supply a parallel refining motion to the refining element(s) through magnetic coupling forces. The refining apparatus can supply multiple different parallel refining motions to multiple different refining elements solely through magnetic coupling forces to improve refining quality and versatility. New refining methods, refining apparatus, and refining elements disclosed. Methods of refining using frictional refining, chemical refining, tribocbemical refining, and electrochemical refining and combinations thereof are disclosed. A refining chamber can be used. New methods of control are refining disclosed. The new magnetic refining methods, apparatus, and magnetically responsive refining elements can help improve yield and lower the cost of manufacture for refining of workpieces having extremely close tolerances such as semiconductor wafers.

Abstract: A method of using a finishing element having a finishing surface including lubricant for finishing semiconductor wafers is described. The organic lubricants with preferred in situ control can improve control of the coefficient of friction and help reduce unwanted defects. The method uses finishing control subsystem having a multiplicity of operative process sensors along with tracked information to improve in situ control of finishing. Differential lubricating film methods are described to differentially finish semiconductor wafers. Planarization and localized finishing can be improved using differential lubricating boundary layer methods of finishing with improved real time control.

Abstract: New, versatile finishing surfaces are described. Unitary finishing elements having discrete finishing members attached to unitary resilient body are disclosed for finishing microdevices such as semiconductor wafers. Finishing surfaces such as discrete finishing members can be comprised of a multiphase polymeric composition. The new unitary finishing elements have lower cost to manufacture and high precision. The unitary finishing elements and finishing surfaces can reduce unwanted surface defect creation on the semiconductor wafers during finishing.

Abstract: A method of in situ control for finishing semiconductor wafers to improve cost of ownership is discussed. A method to use business calculations combined with physical measurements to improve control. The use of boundary lubricating layer control in the operative finishing interface and business calculations to improve the cost of finishing semiconductor wafers is discussed. The method aids control of differential lubricating boundary layers and improved differential finishing of semiconductor wafers. Planarization and localized finishing can be improved using differential lubricating boundary layer methods of finishing.

Abstract: A method of using a finishing element having an abrasive finishing surface including organic lubricant for finishing semiconductor wafers is described. The organic lubricants with preferred in situ control can improve control of the coefficient of friction and help reduce unwanted defects. The method uses finishing control subsystem having a multiplicity of operative process sensors along with tracked information to improve in situ control of finishing. Differential lubricating film methods are described to differentially finish semiconductor wafers. Planarization and localized finishing can be improved using differential lubricating boundary layer methods of finishing with improved real time control.

Abstract: A method of using lubricating boundary layers for finishing semiconductor wafers is described. The lubricating boundary layer thickness is controlled to improve finishing and reduce unwanted surface defects. Differential lubricating boundary layer methods are described to differentially finish semiconductor wafers. Planarization and localized finishing can be improved using differential lubricating boundary layer methods of finishing.

Abstract: A finishing apparatus having magnetically responsive finishing elements that can be smaller than the workpiece being finished are disclosed. The finishing apparatus supplies a parallel finishing motion to finishing elements solely through magnetic coupling forces. The finishing apparatus can supply multiple different parallel finishing motions to multiple different finishing elements solely through magnetic coupling forces to improve finishing quality and versatility. The new magnetic finishing methods, apparatus, and magnetically responsive finishing elements can help improve yield and lower the cost of manufacture for finishing of workpieces having extremely close tolerances such as semiconductor wafers.

Abstract: A method of using a finishing element and using organic lubricating films for finishing semiconductor wafers is described. The lubricants in the finishing element can be transferred to operative finishing interface forming lubricating film. The organic lubricating film thickness can be controlled to improve finishing and reduce unwanted surface defects. Differential organic lubricating film methods are described to differentially finish semiconductor wafers. Planarization and localized finishing can be improved using differential lubricating boundary layer and organic lubricating film methods of finishing.

Abstract: Unitary finishing elements having discrete finishing members fixedly attached to unitary resilient body are disclosed for finishing semiconductor wafers. The discrete finishing members can be comprised of a multiphase polymeric composition. The new unitary finishing elements have lower cost to manufacture and high precision. The unitary finishing elements can reduce unwanted surface defect creation on the semiconductor wafers during finishing.

Abstract: A method of using a finishing element having a fixed abrasive finishing surface including organic boundary lubricants for finishing semiconductor wafers is described. The organic lubricants form an organic lubricating boundary layer in the operative finishing interface in a preferred coefficient of friction range. The selected coefficient of friction helps improve finishing and reduces unwanted surface defects. Differential lubricating boundary layer methods are described to differentially finish semiconductor wafers. Planarization and localized finishing can be improved using differential lubricating boundary layer methods of finishing.