Patents Assigned to BEIJING SIFANG CRENERGEY OPTOELECTRONICS TECHNOLOGY CO., LTD.
  • Patent number: 10784389
    Abstract: The invention relates a full-laser scribing method for a flexible stainless steel substrate solar cell module, comprising: preparing an insulating layer and a molybdenum layer on a stainless steel substrate in sequence; using a laser I to scribe the prepared insulating layer and molybdenum layer to form a first scribed line (P1); preparing the following film layers in sequence on the molybdenum layer in which P1 has been scribed: a CIGS layer, a cadmium sulfide layer and an intrinsic zinc oxide layer; using a laser II to make scribe and thus form a second scribed line (P2), wherein the second scribed line P2 is parallel with the first scribed line P1; and preparing an aluminum-doped zinc oxide layer on the intrinsic zinc oxide layer in which P2 has been scribed, and using a laser III to make scribe and thus form a third scribed line (P3), wherein the third scribed line P3 is parallel with the first scribed line P1.
    Type: Grant
    Filed: December 28, 2016
    Date of Patent: September 22, 2020
    Assignees: Beijing Sifang Crenergey Optoelectronics Technology Co., Ltd., Beijing Sifang Automation Co., Ltd.
    Inventors: Ning Zhang, Xinping Yu, Wanlei Dai, Yuandong Liu, Wei Zhang, Zhe Sun
  • Patent number: 10418508
    Abstract: Disclosed is a full-laser scribing method for a large-area copper indium gallium selenide (CIGS) thin-film solar cell module, including: using a laser I to scribe a molybdenum thin film prepared on soda-lime glass to form a first scribed line (P1); preparing the following film layers in sequence on the molybdenum layer in which P1 has been scribed: a CIGS layer, a cadmium sulfide layer and an intrinsic zinc oxide layer; after finishing preparation of the above film layers, using a laser II for scribing to form a second scribed line (P2), wherein the scribed line P2 is parallel with the scribed line P1; and preparing an aluminum-doped zinc oxide layer on the intrinsic zinc oxide layer in which P2 has been scribed, and using a laser III for scribing to form a third scribed line (P3), wherein the scribed line P3 is parallel with the scribed line P1.
    Type: Grant
    Filed: May 17, 2016
    Date of Patent: September 17, 2019
    Assignees: BEIJING SIFANG AUTOMATION CO., LTD., BEIJING SIFANG CRENERGEY OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Ning Zhang, Xinping Yu, Wanlei Dai
  • Publication number: 20190237600
    Abstract: The invention relates a full-laser scribing method for a flexible stainless steel substrate solar cell module, comprising: preparing an insulating layer and a molybdenum layer on a stainless steel substrate in sequence; using a laser I to scribe the prepared insulating layer and molybdenum layer to form a first scribed line (P1); preparing the following film layers in sequence on the molybdenum layer in which P1 has been scribed: a CIGS layer, a cadmium sulfide layer and an intrinsic zinc oxide layer; using a laser II to make scribe and thus form a second scribed line (P2), wherein the second scribed line P2 is parallel with the first scribed line P1; and preparing an aluminum-doped zinc oxide layer on the intrinsic zinc oxide layer in which P2 has been scribed, and using a laser III to make scribe and thus form a third scribed line (P3), wherein the third scribed line P3 is parallel with the first scribed line P1.
    Type: Application
    Filed: December 28, 2016
    Publication date: August 1, 2019
    Applicants: Beijing Sifang Crenergey Optoelectronics Technology Co., Ltd., Beijing Sifang Automation Co., Ltd.
    Inventors: Ning Zhang, Xinping Yu, Wanlei Dai, Yuandong Liu, Wei Zhang, Zhe Sun
  • Publication number: 20180114876
    Abstract: Disclosed is a full-laser scribing method for a large-area copper indium gallium selenide (CIGS) thin-film solar cell module, including: using a laser I to scribe a molybdenum thin film prepared on soda-lime glass to form a first scribed line (P1); preparing the following film layers in sequence on the molybdenum layer in which P1 has been scribed: a CIGS layer, a cadmium sulfide layer and an intrinsic zinc oxide layer; after finishing preparation of the above film layers, using a laser II for scribing to form a second scribed line (P2), wherein the scribed line P2 is parallel with the scribed line P1; and preparing an aluminum-doped zinc oxide layer on the intrinsic zinc oxide layer in which P2 has been scribed, and using a laser III for scribing to form a third scribed line (P3), wherein the scribed line P3 is parallel with the scribed line P1.
    Type: Application
    Filed: May 17, 2016
    Publication date: April 26, 2018
    Applicants: BEIJING SIFANG AUTOMATION CO., LTD., BEIJING SIFANG CRENERGEY OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Ning ZHANG, Xinping YU, Wanlei DAI