Abstract: The present disclosure relates to a multi-spectrum photosensitive device and manufacturing method thereof. The multi-spectrum photosensitive device comprises at least one opaque base layer; each base layer having at least two sides, at least two of the sides are provided with photosensitive pixel groups, each photosensitive pixel group is used for sensing light of either spectrum irradiated from the obverse direction of the located side. Alternatively, the multi-spectrum photosensitive device comprises at least one transparent base layer; each base layer having at least two sides, at least two of the sides are provided with photosensitive pixel groups, each photosensitive pixel group is used for sensing light of interested spectrum irritated from the obverse direction or reverse direction of the located side.

Abstract: A multi-spectrum photosensitive device and method for sampling the same, the method includes a first combining process for combining-and-sampling two adjacent pixels in same row different column, or in different row same column, or in different row different column in the pixel array to obtain a sampling data of a first combined pixel; a second combining process for combining-and-sampling the sampling data of the first combined pixel obtained from the first combining unit to obtain a sampling data of a second combined pixel; and a third combining process, a sampling data of a third combined pixel is obtained by a method for color conversion and image scaling in a digital space. The application is applied for a multi-pixel sharing reading and amplifying circuit of a single-layer color photosensitive chip, a single-sided multi-layer photosensitive chip, and a double-sided double-layer photosensitive chip.

Abstract: The present application relates to a photosensitive device as well as a reading method and a reading circuit thereof. The photosensitive device comprises a pixel array and a read circuit, wherein a transfer gate for connecting adjacent pixels and transferring charge between the connected pixels is arranged among at least some designated pixels in the pixel array, the read circuit is used for reading charge of a pixel in the pixel array, said charge is at least one of self-charge of said pixel, charge transferred from an adjacent pixel of said pixel, superposition of the self-charge of said pixel and the charge transferred from one or more pixels adjacent to said pixel, and superposition of the transfer charges of two or more pixels adjacent to said pixel.

Abstract: A multi-spectrum photosensitive device comprises two, three, or four composite sensing pixels arranged in layers up and down in a base layer of P-type or N-type silicon by means of single-sided processing or double-sided processing, each composite sensing pixels can sense respectively spectrum orthogonal or complementary to each other in visible light or visible and infrared light. The basic sensing pixels on different layers of the composite sensing pixels can be designed to sense different colors or spectrums, so that a multi-spectrum photosensitive chip can be achieved by repeatedly arranging the macro units consisting of more than one composite sensing pixel. The present disclosure also includes a new multi-layer sensing pixel, and examples of which used in a single-sided double-layer, or a double-sided double-layer, or a double-sided three-layer, or a double-sided four-layer, or a single-sided mixed double-layer, or a double-sided mixed with double-layer or a multi-layer multi-spectrum sensing device.

Abstract: The present disclosure relates to a multi-spectrum photosensitive device and manufacturing method thereof. The multi-spectrum photosensitive device comprises at least one opaque base layer; each base layer having at least two sides, at least two of the sides are provided with photosensitive pixel groups, each photosensitive pixel group is used for sensing light of either spectrum irradiated from the obverse direction of the located side. Alternatively, the multi-spectrum photosensitive device comprises at least one transparent base layer; each base layer having at least two sides, at least two of the sides are provided with photosensitive pixel groups, each photosensitive pixel group is used for sensing light of interested spectrum irritated from the obverse direction or reverse direction of the located side.