Patents Assigned to BT Imaging Pty Ltd
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Patent number: 10502687Abstract: Methods and systems are presented for analysing semiconductor materials as they progress along a production line, using photoluminescence images acquired using line-scanning techniques. The photoluminescence images can be analysed to obtain spatially resolved information on one or more properties of said material, such as lateral charge carrier transport, defects and the presence of cracks. In one preferred embodiment the methods and systems are used to obtain series resistance images of silicon photovoltaic cells without making electrical contact with the sample cell.Type: GrantFiled: February 6, 2019Date of Patent: December 10, 2019Assignee: BT Imaging Pty LtdInventors: Thorsten Trupke, Juergen Weber
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Patent number: 10241051Abstract: Methods and systems are presented for analyzing semiconductor materials as they progress along a production line, using photoluminescence images acquired using line-scanning techniques. The photoluminescence images can be analyzed to obtain spatially resolved information on one or more properties of said material, such as lateral charge carrier transport, defects and the presence of cracks. In one preferred embodiment the methods and systems are used to obtain series resistance images of silicon photovoltaic cells without making electrical contact with the sample cell.Type: GrantFiled: December 22, 2017Date of Patent: March 26, 2019Assignee: BT IMAGING PTY LTDInventors: Thorsten Trupke, Juergen Weber
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Patent number: 9912291Abstract: Embodiments of methods and systems for identifying or determining spatially resolved properties in indirect bandgap semiconductor devices such as solar cells are described. In one embodiment, spatially resolved properties of an indirect bandgap semiconductor device are determined by externally exciting the indirect bandgap semiconductor device to cause the indirect bandgap semiconductor device to emit luminescence (110), capturing images of luminescence emitted from the indirect bandgap semiconductor device in response to the external excitation (120), and determining spatially resolved properties of the indirect bandgap semiconductor device based on a comparison of relative intensities of regions in one or more of the luminescence images (130).Type: GrantFiled: October 13, 2016Date of Patent: March 6, 2018Assignee: BT IMAGING PTY LTDInventors: Thorsten Trupke, Robert Andrew Bardos
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Patent number: 9885662Abstract: Methods and systems are presented for analyzing semiconductor materials as they progress along a production line, using photoluminescence images acquired using line-scanning techniques. The photoluminescence images can be analyzed to obtain spatially resolved information on one or more properties of said material, such as lateral charge carrier transport, defects and the presence of cracks. In one preferred embodiment the methods and systems are used to obtain series resistance images of silicon photovoltaic cells without making electrical contact with the sample cell.Type: GrantFiled: July 5, 2013Date of Patent: February 6, 2018Assignee: BT IMAGING PTY LTDInventors: Thorsten Trupke, Juergen Weber
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Patent number: 9546955Abstract: A method is disclosed whereby luminescence images are captured from as-cut or partially processed bandgap materials such as multicrystalline silicon wafers. These images are then processed to provide information about defects such as dislocations within the bandgap material. The resultant information is then utilized to predict various key parameters of a solar cell manufactured from the bandgap material, such as open circuit voltage and short circuit current. The information may also be utilized to apply a classification to the bandgap material. The methods can also be used to adjust or assess the effect of additional processing steps, such as annealing, intended to reduce the density of defects in the bandgap materials.Type: GrantFiled: July 22, 2015Date of Patent: January 17, 2017Assignee: BT IMAGING PTY LTDInventors: Thorsten Trupke, Robert A. Bardos
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Patent number: 9482625Abstract: Embodiments of methods and systems for identifying or determining spatially resolved properties in indirect bandgap semiconductor devices such as solar cells are described. In one embodiment, spatially resolved properties of an indirect bandgap semiconductor device are determined by externally exciting the indirect bandgap semiconductor device to cause the indirect bandgap semiconductor device to emit luminescence (110), capturing images of luminescence emitted from the indirect bandgap semiconductor device in response to the external excitation (120), and determining spatially resolved properties of the indirect bandgap semiconductor device based on a comparison of relative intensities of regions in one or more of the luminescence images (130).Type: GrantFiled: March 12, 2014Date of Patent: November 1, 2016Assignee: BT IMAGING PTY LTDInventors: Thorsten Trupke, Robert Andrew Bardos
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Patent number: 9157863Abstract: Methods are presented for separating the effects of background doping density and effective minority carrier lifetime on photoluminescence (PL) generated from semiconductor materials. In one embodiment the background doping density is measured by another technique, enabling PL measurements to be analyzed in terms of effective minority carrier lifetime. In another embodiment the effective lifetime is measured by another technique, enabling PL measurements to be analyzed in terms of background doping density. In another embodiment, the effect of background doping density is removed by calculating intensity ratios of two PL measurements obtained in different spectral regions, or generated by different excitation wavelengths. The methods are particularly useful for bulk samples such as bricks or ingots of silicon, where information can be obtained over a much wider range of bulk lifetime values than is possible with thin, surface-limited samples such as silicon wafers.Type: GrantFiled: April 18, 2014Date of Patent: October 13, 2015Assignee: BT IMAGING PTY LTD.Inventor: Thorsten Trupke
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Patent number: 9103792Abstract: A method is disclosed whereby luminescence images are captured from as-cut or partially processed bandgap materials such as multicrystalline silicon wafers. These images are then processed to provide information is then utilized to predict various key parameters of a solar cell manufactured from the bandgap material, such as open circuit voltage and short circuit current. The information may also be utilized to apply a classification to the bandgap material. The methods can also be used to adjust or assess the effect of additional processing steps, such as annealing, intended to reduce the density of defects in the bandgap materials.Type: GrantFiled: March 31, 2009Date of Patent: August 11, 2015Assignee: BT IMAGING PTY LTD.Inventors: Thorsten Trupke, Robert A. Bardos
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Patent number: 9035267Abstract: Methods and systems are presented for acquiring photoluminescence images (2) of silicon solar cells and wafers (4) as they progress along a manufacturing line (36). In preferred embodiments the images are acquired while maintaining motion of the samples. In certain embodiments photoluminescence is generated with short pulse, high intensity excitation, (8) for instance by a flash lamp (50) while in other embodiments images are acquired in line scanning fashion. The photoluminescence images can be analysed to obtain information on average or spatially resolved values of one or more sample properties such as minority carrier diffusion length, minority carrier lifetime, dislocation defects, impurities and shunts, or information on the incidence or growth of cracks in a sample.Type: GrantFiled: January 4, 2011Date of Patent: May 19, 2015Assignee: BT IMAGING PTY LTDInventors: Ian A. Maxwell, Thorsten Trupke, Robert A. Bardos, Kenneth E. Arnett
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Patent number: 8934705Abstract: Methods are presented for improved detection of persistent or systematic defects induced during the manufacture of a product. In particular, the methods are directed to the detection of defects induced systematically in the manufacture of photovoltaic cells and modules. Images acquired from a number of samples are combined, enhancing the systematic defects and suppressing random features such as variations in material quality. Once a systematic defect is identified, steps can be taken to locate and rectify its cause.Type: GrantFiled: August 8, 2011Date of Patent: January 13, 2015Assignee: BT Imaging Pty LtdInventor: Ian Andrew Maxwell
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Publication number: 20140224965Abstract: Methods are presented for separating the effects of background doping density and effective minority carrier lifetime on photoluminescence (PL) generated from semiconductor materials. In one embodiment the background doping density is measured by another technique, enabling PL measurements to be analysed in terms of effective minority carrier lifetime. In another embodiment the effective lifetime is measured by another technique, enabling PL measurements to be analysed in terms of background doping density. In another embodiment, the effect of background doping density is removed by calculating intensity ratios of two PL measurements obtained in different spectral regions, or generated by different excitation wavelengths. The methods are particularly useful for bulk samples such as bricks or ingots of silicon, where information can be obtained over a much wider range of bulk lifetime values than is possible with thin, surface-limited samples such as silicon wafers.Type: ApplicationFiled: April 18, 2014Publication date: August 14, 2014Applicant: BT Imaging Pty LtdInventor: Thorsten TRUPKE
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Publication number: 20140212020Abstract: Photoluminescence-based methods are presented for facilitating alignment of wafers during metallisation in the manufacture of photovoltaic cells with selective emitter structures, and in particular for visualising the selective emitter structure prior to metallisation. In preferred forms the method is performed in-line, with each wafer inspected after formation of the selective emitter structure to identify its location or orientation. The information gained can also be used to reject defective wafers from the process line or to identify a systematic fault or inaccuracy with the process used to form the patterned emitter structure. Each wafer can additionally be inspected via photoluminescence imaging after metallisation, to determine whether the metal contacts have been correctly positioned on the selective emitter structure. The information gained after metallisation can also be used to provide feedback to the upstream process steps.Type: ApplicationFiled: August 10, 2012Publication date: July 31, 2014Applicant: BT IMAGING PTY LTDInventor: Juergen Weber
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Publication number: 20140191776Abstract: Embodiments of methods and systems for identifying or determining spatially resolved properties in indirect bandgap semiconductor devices such as solar cells are described. In one embodiment, spatially resolved properties of an indirect bandgap semiconductor device are determined by externally exciting the indirect bandgap semiconductor device to cause the indirect bandgap semiconductor device to emit luminescence (110), capturing images of luminescence emitted from the indirect bandgap semiconductor device in response to the external excitation (120), and determining spatially resolved properties of the indirect bandgap semiconductor device based on a comparison of relative intensities of regions in one or more of the luminescence images (130).Type: ApplicationFiled: March 12, 2014Publication date: July 10, 2014Applicant: BT Imaging Pty LtdInventors: Thorsten TRUPKE, Robert Andrew BARDOS
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Patent number: 8742372Abstract: Methods are presented for separating the effects of background doping density and effective minority carrier lifetime on photoluminescence (PL) generated from semiconductor materials. In one embodiment the background doping density is measured by another technique, enabling PL measurements to be analyzed in terms of effective minority carrier lifetime. In another embodiment the effective lifetime is measured by another technique, enabling PL measurements to be analyzed in terms of background doping density. In yet another embodiment, the effect of background doping density is removed by calculating intensity ratios of two PL measurements obtained in different spectral regions, or generated by different excitation wavelengths. The methods are particularly useful for bulk samples such as bricks or ingots of silicon, where information can be obtained over a much wider range of bulk lifetime values than is possible with thin, surface-limited samples such as silicon wafers.Type: GrantFiled: July 19, 2010Date of Patent: June 3, 2014Assignee: BT Imaging Pty LtdInventor: Thorsten Trupke
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Patent number: 8710860Abstract: Embodiments of methods and systems for identifying or determining spatially resolved properties in indirect bandgap semiconductor devices such as solar cells are described. In one embodiment, spatially resolved properties of an indirect bandgap semiconductor device are determined by externally exciting the indirect bandgap semiconductor device to cause the indirect bandgap semiconductor device to emit luminescence (110), capturing images of luminescence emitted from the indirect bandgap semiconductor device in response to the external excitation (120), and determining spatially resolved properties of the indirect bandgap semiconductor device based on a comparison of relative intensities of regions in one or more of the luminescence images (130).Type: GrantFiled: May 4, 2007Date of Patent: April 29, 2014Assignee: BT Imaging Pty LtdInventors: Thorsten Trupke, Robert Andrew Bardos
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Publication number: 20140039820Abstract: Luminescence-based methods are disclosed for determining quantitative values for the series resistance across a photovoltaic cell, preferably without making electrical contact to the cell. Luminescence signals are generated by exposing the cell to uniform and patterned illumination with excitation light selected to generate luminescence from the cell, with the illumination patterns preferably produced using one or more filters selected to attenuate the excitation light and transmit the luminescence.Type: ApplicationFiled: April 17, 2012Publication date: February 6, 2014Applicant: BT IMAGING PTY LTDInventors: Thorsten Trupke, Juergen Weber
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Patent number: 8483476Abstract: Disclosed is a method (300) of manufacturing at least one semiconductor photovoltaic cell or module and for classifying semiconductor material. In one implementation (500) the method involves luminescence imaging a wafer at each of a plurality of stages (312-324) of the manufacturing process, and comparing at least two images obtained from the imaging step in respect of the same wafer to identify the incidence or growth of a manufacturing process induced fault. The wafer is removed (351-356) from the manufacturing process (310) where a process induced fault is identified that exceeds a predetermined level of acceptability or the fault may be remedied, or the wafer passed to an alternate manufacturing process to match its characteristics. In an alternate implementation the method comprises classifying semiconductor material.Type: GrantFiled: September 1, 2008Date of Patent: July 9, 2013Assignee: BT Imaging Pty LtdInventors: Robert Andrew Bardos, Thorsten Trupke
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Publication number: 20130129187Abstract: Methods are presented for improved detection of persistent or systematic defects induced during the manufacture of a product. In particular, the methods are directed to the detection of defects induced systematically in the manufacture of photovoltaic cells and modules. Images acquired from a number of samples are combined, enhancing the systematic defects and suppressing random features such as variations in material quality. Once a systematic defect is identified, steps can be taken to locate and rectify its cause.Type: ApplicationFiled: August 8, 2011Publication date: May 23, 2013Applicant: BT IMAGING PTY LTDInventor: Ian Andrew Maxwell
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Publication number: 20130062536Abstract: Methods are presented for analysing semiconductor materials (8), and silicon photovoltaic cells and cell precursors in particular, using imaging of photoluminescence (12) generated with high intensity illumination (16). The high photoluminescence signal levels (16) obtained with such illumination (30) enable the acquisition of images from moving samples with minimal blurring. Certain material defects of interest to semiconductor device manufacturers, especially cracks, appear sharper under high intensity illumination. In certain embodiments images of photoluminescence generated with high and low intensity illumination are compared to highlight selected material properties or defects.Type: ApplicationFiled: January 4, 2011Publication date: March 14, 2013Applicant: BT Imaging Pty. Ltd.Inventors: Robert A. Bardos, Juergen Weber, Thorsten Trupke, Ian A. Maxwell, Wayne McMillan
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Publication number: 20130043405Abstract: Methods and systems are presented for acquiring photoluminescence images (2) of silicon solar cells and wafers (4) as they progress along a manufacturing line (36). In preferred embodiments the images are acquired while maintaining motion of the samples. In certain embodiments photoluminescence is generated with short pulse, high intensity excitation, (8) for instance by a flash lamp (50) while in other embodiments images are acquired in line scanning fashion. The photoluminescence images can be analysed to obtain information on average or spatially resolved values of one or more sample properties such as minority carrier diffusion length, minority carrier lifetime, dislocation defects, impurities and shunts, or information on the incidence or growth of cracks in a sample.Type: ApplicationFiled: January 4, 2011Publication date: February 21, 2013Applicant: BT Imaging Pty. Ltd.Inventors: Ian Andrew Maxwell, Thorsten Trupke, Robert Andrew Bardos, Kenneth Edmund Arnett