Patents Assigned to C/O NATIONAL UNIVERSITY CORPORATION TOKYO
  • Single-Crystalline Aluminum Nitride Substrate and a Manufacturing Method Thereof
    Publication number: 20140346638
    Abstract: The present invention relates to a single-crystalline aluminum nitride wherein a carbon concentration is 1×1014 atoms/cm3 or more and less than 3×1017 atoms/cm3, a chlorine concentration is 1×1014 to 1×1017 atoms/cm3, and an absorption coefficient at 265 nm wavelength is 40 cm?1 or less.
    Type: Application
    Filed: December 22, 2011
    Publication date: November 27, 2014
    Applicants: TOKUYAMA CORPORATION, C/O NATIONAL UNIVERSITY CORPORATION TOKYO
    Inventors: Akinori Koukitu, Yoshinao Kumagai, Toru Nagashima, Yuki Hiraren