Abstract: An active termination circuit for clamping a signal on a transmission line in an electronic device is described. The active termination circuit is configured to clamp the signal on the transmission line to one of a first reference voltage level and a second reference voltage level. In one embodiment, the active termination circuit includes a bottom clamping transistor coupled to a first potential having a bottom clamping transistor control node arranged for clamping the signal at about a first reference voltage. The active termination circuit also includes a top clamping transistor coupled to a second potential having a top clamping transistor control node arranged for clamping the signal at about a second reference voltage as well as an inverter unit coupling the transmission line to stabilizing capacitors for stabilizing control node voltages.

Abstract: An apparatus consisting of a single wire bond silicon sub-mount used to make an LED device which also has built-in ESD protection in the sub-mount. The single wire bond silicon sub-mount uses a pass-through interconnection between the topside of the sub-mount and the underside so that the LED chip mounted thereon is electrically coupled through the sub-mount to the anode.

Abstract: An active termination circuit for clamping a signal on a transmission line in an electronic device is described. The active termination circuit is configured to clamp the signal on the transmission line to one of a first reference voltage level and a second reference voltage level. In one embodiment, the active termination circuit includes a bottom clamping transistor coupled to a first potential having a bottom clamping transistor control node arranged for clamping the signal at about a first reference voltage. The active termination circuit also includes a top clamping transistor coupled to a second potential having a top clamping transistor control node arranged for clamping the signal at about a second reference voltage as well as an inverter unit coupling the transmission line to stabilizing capacitors for stabilizing control node voltages.

Abstract: An active termination circuit for clamping a signal on a transmission line in an electronic device is described. The active termination circuit is configured to clamp the signal on the transmission line to one of a first reference voltage level and a second reference voltage level. The active termination circuit includes a bottom clamping transistor having a bottom clamping transistor first node coupled to a transmission line at a transmission line node, a bottom clamping transistor second node coupled to a first potential, and a bottom clamping transistor control node coupled to a first bias voltage supply. The circuit also includes a top clamping transistor having a top clamping transistor first node coupled to the transmission line at the transmission line node, a top clamping transistor second node coupled to a second potential, and a top clamping transistor control node coupled to a second bias voltage supply.

Abstract: An active termination circuit for clamping a signal on a transmission line in an electronic device is described. The active termination circuit is configured to clamp the signal on the transmission line to one of a first reference voltage level and a second reference voltage level. In one embodiment, the active termination circuit includes a bottom clamping transistor coupled to a first potential having a bottom clamping transistor control node arranged for clamping the signal at about a first reference voltage. The active termination circuit also includes a top clamping transistor coupled to a second potential having a top clamping transistor control node arranged for clamping the signal at about a second reference voltage as well as an inverter unit coupling the transmission line to stabilizing capacitors for stabilizing control node voltages.

Abstract: An adjustable resistor between a first terminal and a second terminal is provided. Generally, a plurality of resistors is provided comprising a set of trimmable resistors, where the trimmable resistors are electrically connected together in series, and a set of static resistors, where each static resistor is connected in parallel with a trimmable resistor of the set of trimmable resistors. A trim terminal and a plurality of diodes where each diode is electrically connected between a trimmable resistor and a trim terminal are also provided.

Abstract: An active termination circuit for clamping a signal on a transmission line in an electronic device is described. The active termination circuit is configured to clamp the signal on the transmission line to one of a first reference voltage level and a second reference voltage level. In one embodiment, the active termination circuit includes a bottom clamping transistor coupled to a first potential having a bottom clamping transistor control node arranged for clamping the signal at about a first reference voltage. The active termination circuit also includes a top clamping transistor coupled to a second potential having a top clamping transistor control node arranged for clamping the signal at about a second reference voltage as well as stabilizing capacitors for stabilizing control node voltages.

Abstract: An active termination circuit having a selective DC power consumption for clamping signals on a bus in an electronic device is described. The active termination circuit is configured to clamp the signals on the bus to one of a first reference voltage level and a second reference voltage level. In one embodiment, the active termination circuit includes bottom clamping transistors coupled to a first potential having bottom clamping transistor control nodes arranged for clamping the signal at about a first reference voltage. The active termination circuit also includes top clamping transistors coupled to a second potential having top clamping transistor control nodes arranged for clamping the signal at about a second reference voltage. The circuit also has a variable current supply coupled to said first threshold reference transistor and said second threshold reference transistor arranged to reduce the DC power consumption of the active termination circuit as needed.

Abstract: An active termination circuit for clamping signals on a bus in an electronic device is described. The active termination circuit is configured to clamp the signals on the bus to one of a first reference voltage level and a second reference voltage level. In one embodiment, the active termination circuit includes bottom clamping transistors coupled to a first potential having bottom clamping transistor control nodes arranged for clamping the signal at about a first reference voltage. The active termination circuit also includes top clamping transistors coupled to a second potential having top clamping transistor control nodes arranged for clamping the signal at about a second reference voltage.

Abstract: An active termination circuit having localized potential supplies for clamping a signal on a transmission line in an electronic device is described. The active termination circuit is configured to clamp the signal on the transmission line to one of a first reference voltage level and a second reference voltage level. In one embodiment, the active termination circuit includes a bottom clamping transistor coupled to a first localized potential having a bottom clamping transistor control node arranged for clamping the signal at about a first reference voltage. The active termination circuit also includes a top clamping transistor coupled to a second localized potential having a top clamping transistor control node arranged for clamping the signal at about a second reference voltage.

Abstract: An active termination circuit for clamping a signal on a transmission line in an electronic device is described. The active termination circuit is configured to clamp the signal on the transmission line to one of a first reference voltage level and a second reference voltage level. In one embodiment, the active termination circuit includes a bottom clamping transistor coupled to a first potential having a bottom clamping transistor control node arranged for clamping the signal at about a first reference voltage. The active termination circuit also includes a top clamping transistor coupled to a second potential having a top clamping transistor control node arranged for clamping the signal at about a second reference voltage.

Abstract: An active termination circuit for clamping a signal on a transmission line in an electronic device in a tri-state mode is described. The active circuit includes a tri-state output buffer and a bottom clamping transistor coupled to GND and the tri-state output buffer having a bottom clamping transistor control node arranged for clamping the signal at about GND. A bottom threshold reference transistor coupled to a first reference voltage supply configured to supply a first reference voltage. The bottom threshold reference transistor provides a first bias voltage to the bottom clamping transistor control node that biases the bottom clamping transistor control node at about a first threshold voltage above GND where the first threshold voltage represents a threshold voltage of the bottom clamping transistor.

Abstract: An active termination circuit for protecting a node against an ESD voltage spike is described. The ESD protection circuit includes a bottom ESD protection transistor having a first node coupled to a first potential and a bottom ESD protection transistor intrinsic diode reverse biasedly coupling said node to a first reference voltage supply and a bottom threshold reference transistor coupled to the first reference voltage supply. The bottom threshold reference transistor provides a first bias voltage to the bottom ESD protection transistor gate that biases the bottom clamping transistor gate at about a first threshold voltage from the first reference voltage representing a threshold voltage of said bottom ESD protection transistor.

Abstract: An active termination circuit for terminating a transmission line in bused or networked device, which might include a plurality of devices. The active termination circuit is configured to clamp a voltage level on the transmission line to one of a first reference voltage level and a second reference voltage level. The active termination circuit includes a first clamping transistor coupled to a transmission line terminal and a first terminal. The transmission line terminal is configured to be coupled to the transmission line in the electronic device. The first terminal is configured to be coupled to the first reference voltage level in the electronic device. There is included a second clamping transistor coupled to the transmission line terminal and a second terminal. The second terminal is configured to be coupled to the second reference voltage level in the electronic device. There is also included a first threshold reference device coupled to the first clamping transistor.

Abstract: A low drop-out regulator and methods for producing a low drop-out voltage are provided. A driver transistor adapted for connecting to an input supply voltage and producing an output voltage is provided. In addition, a mirroring transistor is coupled to the driver transistor and a voltage differential between the drain and the source of the driver transistor is mirrored in the mirroring transistor. The low drop-out regulator operates in both linear and saturation regions of the driver transistor. The driver transistor and the mirroring transistor are implemented in a CMOS process.

Abstract: A voltage source switching circuit having switches capable of switching between different voltage sources with reduced voltage drop levels is disclosed. A selected one of the different voltage levels is output to a peripheral circuit or supplied to internal circuitry. In one embodiment, the switches are FET devices.

Abstract: An integrated passive device array structure with a value that is programmable during manufacturing. The device structure includes a substantially conductive first layer having a plurality of passive device array elements of the integrated passive device array structure disposed above the substantially conductive first layer. The device further includes an insulating layer formed above the plurality of passive device array elements. One or more vias are selectively formed in the insulating layer. The vias facilitate electrical connections between selected ones of the plurality of passive device array elements with a substantially conductive second layer subsequently deposited above the insulating layer.

Abstract: The present invention relates, in one embodiment, to an integrated circuit including a first circuit structure, a first conductive bonding pad coupled to the first circuit structure, a second circuit structure, and a second conductive bonding pad coupled to the second circuit structure. The first conductive bonding pad is arranged to be separated from the second bonding pad by a gap having a gap dimension. The gap dimension is configured to be bridged by a wire bond, thereby permitting the wire bond to electrically couple the first conductive bonding pad with the second conductive bonding pad when the wire bond is coupled to the first bonding pad and the second bonding pad at the gap.

Abstract: An integrated electrical overload protection device and method of formation which functions as a thermal fuse. The device is integrated directly on the underlying structural or foundational material of an electrical circuit which experiences the electrical overstress. The device can be formed according to standard semiconductor process steps when formed on a semiconductor substrate. The device, or fuse, includes a first and second contact area separated by a gap area. A least a portion of the upper surfaces of the contact areas are covered with a wettable material such as gold. A solder bump, or bridge, is applied which spans the contact areas and provides an closed electrical connection. Upon application of an overload condition across the bridge material, a rise in temperature causes the solder material to melt. The solder flows onto the wettable areas and is drawn out of the gap area to thereby disrupt the electrical connection between the contact areas.

Abstract: A method for endowing an integrated passive device array structure with a programmable value during manufacturing. The method includes forming a substantially conductive first layer and forming a plurality of passive device array elements of the integrated passive device array structure above the substantially conductive first layer. The method further includes forming an insulating layer above the plurality of passive device array elements. There is further included selectively forming vais the insulating layer. The vias facilitate electrical connections between selected ones of the plurality of passive device array elements with a substantially conductive second layer subsequently deposited above the insulating layer.