Patents Assigned to Caracal, Inc.
  • EPITAXIAL GROWTH SYSTEM FOR FAST HEATING AND COOLING
    Publication number: 20120153298
    Abstract: A system for crystal growth having rapid heating and cooling. A fluid-cooling jacket having a reflective shield contained therein is disposed around a heating cylinder in which crystal growth takes place. A heating coil is disposed round the cooling jacket. The invention also includes a method of crystal growth and semiconductor devices formed using the inventive methods and systems.
    Type: Application
    Filed: February 12, 2008
    Publication date: June 21, 2012
    Applicant: CARACAL, INC.
    Inventors: Olof Claes Erik KORDINA, Rune BERGE
  • CRYSTAL GROWTH METHOD AND REACTOR DESIGN
    Publication number: 20080026546
    Abstract: A crystal growth process comprising providing a reactor having a crucible with an injector apparatus and a seed holder. The injector apparatus has an inner gas conduit and an outer gas conduit wherein an inert gas is introduced into the outer conduit. The injector apparatus has an upper injector and a lower injector and a gap therebetween. The upper injector temperature is maintained at a higher temperature than the lower injector.
    Type: Application
    Filed: July 27, 2007
    Publication date: January 31, 2008
    Applicant: CARACAL, INC.
    Inventors: Olof KORDINA, Shailaja RAO
  • SINTERED METAL COMPONENTS FOR CRYSTAL GROWTH REACTORS
    Publication number: 20080026591
    Abstract: An injector apparatus for a crystal growth reactor having a graphite casing, a stainless steel nozzle, a nozzle holder to position the nozzle within the graphite casing, a lower injector disposed within the graphite casing and extending around the nozzle to a point above the nozzle to direct gas flow from the nozzle, an upper injector comprising metal carbide disposed within the casing above the lower injector and spaced apart from the lower injector, and an upper injector.
    Type: Application
    Filed: July 27, 2007
    Publication date: January 31, 2008
    Applicant: CARACAL, Inc.
    Inventors: Olof KORDINA, Shailaja RAO
  • SEED HOLDER FOR CRYSTAL GROWTH REACTORS
    Publication number: 20080022923
    Abstract: A seed holder for use in a crystal growth reactor. The seed holder has a drool and a washer of outer diameter substantially the same as the drool inner diameter. A main body is disposed over the washer and drool, forming an enclosure above the washer and drool, the enclosure forming a cavity above the washer and drool.
    Type: Application
    Filed: July 27, 2007
    Publication date: January 31, 2008
    Applicant: CARACAL, INC.
    Inventors: Olof KORDINA, Shailaja RAO, Joshua CHRISTIE
  • Silicon carbide formation by alternating pulses
    Publication number: 20070169687
    Abstract: A method of forming silicon carbide wherein silicon and carbon precursors are successively pulsed into a reactor in the gas phase. The precursors react to form silicon carbide before reaching the growth surface. A precursor will be preheated in the reaction chamber before reacting with the other precursor. The formed silicon carbide sublime then condenses on a growth surface.
    Type: Application
    Filed: January 26, 2006
    Publication date: July 26, 2007
    Applicant: CARACAL, INC.
    Inventor: Olof Kordina
  • Dissociation of silicon clusters in a gas phase during chemical vapor deposition homo-epitaxial growth of silicon carbide
    Patent number: 7247513
    Abstract: A method of forming a layer of silicon carbide wherein silicon clusters are dissociated in a gas phase. Silicon clusters may be dissociated by a silicon-etching gas such as a group VII-containing component. A semiconductor device is also disclosed having a layer formed by the methods of the invention.
    Type: Grant
    Filed: May 8, 2003
    Date of Patent: July 24, 2007
    Assignee: Caracal, Inc.
    Inventor: Olof Claes Erik Kordina
  • Silicon carbide Schottky diodes and fabrication method
    Publication number: 20060006394
    Abstract: A semiconductor device and method of formation wherein a disjointed termination layer 102 is formed around a Schottky metal region 110. A SiC substrate 104 is provided, on top of which a SiC blocking layer 108 is disposed. The disjointed termination layer 102 is formed above the SiC blocking layer 108. The termination is preferably an epitaxial SiC layer. The Schottky metal region 110 is formed on the blocking layer 108, preferably on the C-face of the blocking layer.
    Type: Application
    Filed: May 27, 2005
    Publication date: January 12, 2006
    Applicant: CARACAL, INC.
    Inventor: Olof Kordina