Abstract: A composite body is joined together of at least two bodies (13, 16), wherein the first body (16) is a component—or monolithically comprises a component—with very stringent requirements on the precision of its surface (typically an optical component) and wherein the second body (13) can have the broadest diversity of functions, for example carrying parts of a position-measuring arrangement or optical surfaces. Each of the two bodies (13, 16) has at least one connecting surface area (21), and the at least two respective connecting surface areas (21) lie opposite each other. Within the at least one connecting surface area (21) of one of the two bodies (13, 16) or in the proximity of said connecting surface area (21), at least one constructive means is arranged for isolating the first body (16) and/or the second body (13) from deformation.

Abstract: A projection exposure apparatus for microlithography comprises illumination optics for illuminating object field points of an object field in an object plane is disclosed. The illumination optics have, for each object field point of the object field, an exit pupil associated with the object point, where sin(?) is a greatest marginal angle value of the exit pupil. The illumination optics include a multi-mirror array that includes a plurality of mirrors to adjust an intensity distribution in exit pupils associated to the object field points.

Abstract: A projection objective of a microlithographic projection exposure apparatus comprises a manipulator for reducing rotationally asymmetric image errors. The manipulator in turn contains a lens, an optical element and an interspace formed between the lens and the optical element, which can be filled with a liquid. At least one actuator acting exclusively on the lens is furthermore provided, which can generate a rotationally asymmetric deformation of the lens.

Abstract: Illumination optics for a microlithographic projection exposure apparatus is used for illumination of an object field in the object plane with illumination light of a radiation source. The illumination optics has an optical beam influencing element which is divided into at least two beam influencing regions in order to generate various illumination modes for the object field which are independent of a light attenuation. The optical beam influencing element is displaceable between a first beam influencing position where a first one of the beam influencing regions is exposed to a bundle of the illumination light, and at least another beam influencing position where another one of the beam influencing regions is exposed to the bundle of the illumination light. Each of the beam influencing regions has a surface which is exposable to illumination light and has a long and a short side length, with the optical beam influencing element being displaceable perpendicular to the long side length.

Abstract: An illumination system of a microlithographic projection exposure apparatus includes a beam deflection array including a number beam deflection elements, for example mirrors. Each beam deflection element is adapted to deflect an impinging light beam by a deflection angle that is variable in response to control signals. The light beams reflected from the beam deflection elements produce spots in a system pupil surface. The number of spots illuminated in the system pupil surface during an exposure process, during which a mask is imaged on a light sensitive surface, is greater than the number of beam deflection elements. This may be accomplished with the help of a beam multiplier unit that multiplies the light beams reflected from the beam deflection elements. In another embodiment the beam deflecting elements are controlled such that the irradiance distribution produced in the system pupil surface changes between two consecutive light pulses of an exposure process.

Abstract: A connection between two components supported in a mutually vibrating fashion has at least one connection element connecting the two components, and a gap located between the two components in which a medium is located. The gap has a width small enough to largely prevent a displacement of the medium inside the gap during comparatively fast relative movements between the two components.

Abstract: An optical assembly supported in an arrangement, especially in an objective or in an illuminating or exposure system, in the interior of a housing comprising at least one optical element, especially a lens, a mirror, or an aperture, wherein the at least one element is influenceable by at least one manipulator is characterized in that the at least one manipulator is arranged either outside of the housing or in a holding means that is separated entirely or to a large extent by the help of a decoupling means, and that there is provided an effective coupling between the manipulator and the element to be influenced by the manipulator in the interior of the arrangement.

Abstract: A replacement apparatus for an optical element mounted between two adjacent optical elements in a lithography objective has a holder for the optical element to be replaced, which holder can be moved into the lithography objective through a lateral opening in a housing of the same.

Abstract: A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective has a first, refractive objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part including at least one concave mirror for imaging the first intermediate imaging into a second intermediate image; and a third, refractive objective part for imaging the second intermediate imaging onto the image plane; wherein the projection objective has a maximum lens diameter Dmax, a maximum image field height Y?, and an image side numerical aperture NA; wherein COMP1=Dmax/(Y?·NA2) and wherein the condition COMP1<10 holds.

Abstract: An imaging optical system has a plurality of mirrors. These image an object field in an object plane into an image field in an image plane. In the imaging optical system, the ratio of a maximum angle of incidence of imaging light) on reflection surfaces of the mirrors and an image-side numerical aperture of the imaging optical system is less than 33.8°. This can result in an imaging optical system which offers good conditions for a reflective coating of the mirror, with which a low reflection loss can be achieved for imaging light when passing through the imaging optical system, in particular even at wavelengths in the EUV range of less than 10 nm.

Abstract: A microlithographic projection exposure apparatus comprises a projection objective which images an object onto an image plane and has a lens with a curved surface. In the projection objective there is a liquid or solid medium which directly adjoins the curved surface over a region which is usable for imaging the object. The projection exposure apparatus also has an adjustable manipulator for reducing an image field curvature which is caused by heating of the medium during the projection operation.

Abstract: A mirror for the EUV wavelength range (1) having a layer arrangement (P) applied on a substrate (S), the layer arrangement having a periodic sequence of individual layers, where the periodic sequence has at least two individual layers—forming a period—composed respectively of silicon (Si) and ruthenium (Ru). Also disclosed are a projection objective for microlithography (2) including such a mirror, and a projection exposure apparatus for microlithography having such a projection objective (2).

Abstract: An illumination system of a micro-lithographic projection exposure apparatus is provided, which is configured to illuminate a mask positioned in a mask plane. The system includes a pupil shaping optical subsystem and illuminator optics that illuminate a beam deflecting component. For determining a property of the beam deflecting component, an intensity distribution in a system pupil surface of the illumination system is determined. Then the property of the beam deflecting component is determined such that the intensity distribution produced by the pupil shaping subsystem in the system pupil surface approximates the intensity distribution determined before. At least one of the following aberrations are taken into account in this determination: (i) an aberration produced by the illuminator optics; (ii) an aberration produced by the pupil shaping optical subsystem; (iii) an aberration produced by an optical element arranged between the system pupil surface and the mask plane.

Abstract: A composite structure for microlithography, in particular a holding device for a wafer, has two or more components, the surfaces of which are bonded together at least at one bond. At least one of the components consists of cordierite (Mg2Al4Si5O18) or of silicon carbide (SiC). Also disclosed is an optical arrangement, in particular a projection illumination apparatus for microlithography, having at least one such composite structure, preferably a wafer stage.

Abstract: There is provided an optical imaging arrangement comprising: a mask unit comprising a pattern, a substrate unit comprising a substrate, an optical projection unit comprising a group of optical element units, the optical projection unit being adapted to transfer an image of the pattern onto the substrate, a first imaging arrangement component, the first imaging arrangement component being a component of one of the optical element units, a second imaging arrangement component, the second imaging arrangement component being different from the first imaging arrangement component and being a component of one of the mask unit, the optical projection unit and the substrate unit, and a metrology arrangement. The metrology arrangement captures a spatial relationship between the first imaging arrangement component and the second imaging arrangement component. The metrology arrangement comprises a reference element, the reference element being mechanically connected directly to the first imaging arrangement component.

Abstract: The disclosure relates to a microlithographic projection exposure apparatus, as well as related components and methods. In some embodiments, a microlithographic projection exposure apparatus includes an illumination system and a projection objective, where the illumination system can illuminate an object plane of the projection objective and the projection objective can produce the image of the object plane on an image plane. A polarization-dependent transmission can be produced in the illumination system such that, for at least one polarization distribution in respect of the light impinging on the object plane, a non-homogeneous intensity distribution in the object plane is obtained. The non-homogeneous intensity distribution can afford a homogeneous intensity distribution in the image plane by virtue of polarization-dependent transmission properties of the projection objective.

Abstract: A mirror serves for guiding a radiation bundle. The mirror has a basic body and a coating of a reflective surface of the basic body, the coating increasing the reflectivity of the mirror. A heat dissipating device serves for dissipating heat deposited in the coating. The heat dissipating device has at least one Peltier element. The coating is applied directly on the Peltier element. A temperature setting apparatus has at least one temperature sensor for a temperature of the reflective surface. A regulating device of the Temperature setting apparatus can be connected to the at least one Peltier element and is signal-connected to the at least one temperature sensor. The result is a mirror in which a heat dissipating capacity of the heat dissipating device is improved.

Abstract: There is provided a collector system. The collector system includes a first collector mirror and a second collector mirror. The first collector mirror receives EUV light from a light source at a first aperture angle via a first beam path, and reflects the EUV light at a second aperture angle along a second beam path. The first aperture angle is larger than or substantially equal to the second aperture angle. The second mirror receives the EUV light from the first mirror at the second aperture angle. The collector is an oblique mirror type normal incidence mirror collector system.

Abstract: A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective comprises: a first objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part for imaging the first intermediate imaging into a second intermediate image; a third objective part for imaging the second intermediate imaging directly onto the image plane; wherein a first concave mirror having a first continuous mirror surface and at least one second concave mirror having a second continuous mirror surface are arranged upstream of the second intermediate image; pupil surfaces are formed between the object plane and the first intermediate image, between the first and the second intermediate image and between the second intermediate image and the image plane; and all concave mirrors are arranged optically remote from a pupil surface.

Abstract: An illumination optics for microlithography includes an optical assembly for guiding illumination light to an object field to be illuminated in an object plane. The illumination optics can divide an illumination light radiation bundle into a plurality of radiation sub-bundles which are assigned to different illumination angles of the object field illumination. The illumination optics is configured so that at least some of the radiation sub-bundles are superimposed in a superposition plane which is spaced from the object plane and which is not imaged into the object plane in which superposition takes place. This superposition is such that edges of the superimposed radiation sub-bundles coincide at least partially. In some embodiments, a field intensity setting device includes a plurality of adjacent individual diaphragms which at least attenuate illumination light when exposed thereon.