Patents Assigned to Center for Technology Licensing at Cornell University
  • Publication number: 20230395665
    Abstract: Provided are a superlattice structure including a two-dimensional material and a device including the superlattice structure. The superlattice structure may include at least two different two-dimensional (2D) materials bonded to each other in a lateral direction, and an interfacial region of the at least two 2D materials may be strained. The superlattice structure may have a bandgap adjusted by the interfacial region that is strained. The at least two 2D materials may include first and second 2D materials. The first 2D material may have a first bandgap in an intrinsic state thereof. The second 2D material may have a second bandgap in an intrinsic state thereof. An interfacial region of the first and second 2D materials and an adjacent region may have a third bandgap between the first bandgap and the second bandgap.
    Type: Application
    Filed: November 2, 2022
    Publication date: December 7, 2023
    Applicants: Samsung Electronics Co., Ltd., THE UNIVERSITY OF CHICAGO, Center for Technology Licensing at Cornell University
    Inventors: Minhyun LEE, Jiwoong PARK, Saien XIE, Jinseong HEO, Hyeonjin SHIN
  • Publication number: 20230117405
    Abstract: The present application provides methods and systems for detecting and quantifying chromosomal instability from histology images with machine learning. Also described herein are methods for selecting treatments for a medical disease, by determining a chromosomal instability pathological metric from histology images. The disclosed methods and systems may also be used to investigate disease progression and prognosis.
    Type: Application
    Filed: September 21, 2022
    Publication date: April 20, 2023
    Applicants: Volastra Therapeutics, Inc., Center for Technology Licensing at Cornell University (CTL)
    Inventors: Akanksha VERMA, Olivier ELEMENTO, Zhuoran XU
  • Patent number: 11575011
    Abstract: Provided are a superlattice structure including a two-dimensional material and a device including the superlattice structure. The superlattice structure may include at least two different two-dimensional (2D) materials bonded to each other in a lateral direction, and an interfacial region of the at least two 2D materials may be strained. The superlattice structure may have a bandgap adjusted by the interfacial region that is strained. The at least two 2D materials may include first and second 2D materials. The first 2D material may have a first bandgap in an intrinsic state thereof. The second 2D material may have a second bandgap in an intrinsic state thereof. An interfacial region of the first and second 2D materials and an adjacent region may have a third bandgap between the first bandgap and the second bandgap.
    Type: Grant
    Filed: November 1, 2021
    Date of Patent: February 7, 2023
    Assignees: Samsung Electronics Co., Ltd., The University of Chicago, Center for Technology Licensing at Cornell University
    Inventors: Minhyun Lee, Jiwoong Park, Saien Xie, Jinseong Heo, Hyeonjin Shin
  • Publication number: 20220109051
    Abstract: Provided are a superlattice structure including a two-dimensional material and a device including the superlattice structure. The superlattice structure may include at least two different two-dimensional (2D) materials bonded to each other in a lateral direction, and an interfacial region of the at least two 2D materials may be strained. The superlattice structure may have a bandgap adjusted by the interfacial region that is strained. The at least two 2D materials may include first and second 2D materials. The first 2D material may have a first bandgap in an intrinsic state thereof. The second 2D material may have a second bandgap in an intrinsic state thereof. An interfacial region of the first and second 2D materials and an adjacent region may have a third bandgap between the first bandgap and the second bandgap.
    Type: Application
    Filed: November 1, 2021
    Publication date: April 7, 2022
    Applicants: Samsung Electronics Co., Ltd., THE UNIVERSITY OF CHICAGO, Center for Technology Licensing at Cornell University
    Inventors: Minhyun LEE, Jiwoong PARK, Saien XIE, Jinseong HEO, Hyeonjin SHIN
  • Patent number: 11189699
    Abstract: Provided are a superlattice structure including a two-dimensional material and a device including the superlattice structure. The superlattice structure may include at least two different two-dimensional (2D) materials bonded to each other in a lateral direction, and an interfacial region of the at least two 2D materials may be strained. The superlattice structure may have a bandgap adjusted by the interfacial region that is strained. The at least two 2D materials may include first and second 2D materials. The first 2D material may have a first bandgap in an intrinsic state thereof. The second 2D material may have a second bandgap in an intrinsic state thereof. An interfacial region of the first and second 2D materials and an adjacent region may have a third bandgap between the first bandgap and the second bandgap.
    Type: Grant
    Filed: May 31, 2019
    Date of Patent: November 30, 2021
    Assignees: Samsung Electronics Co., Ltd., Center for Technology Licensing at Cornell University, The University of Chicago
    Inventors: Minhyun Lee, Jiwoong Park, Saien Xie, Jinseong Heo, Hyeonjin Shin
  • Publication number: 20190371892
    Abstract: Provided are a superlattice structure including a two-dimensional material and a device including the superlattice structure. The superlattice structure may include at least two different two-dimensional (2D) materials bonded to each other in a lateral direction, and an interfacial region of the at least two 2D materials may be strained. The superlattice structure may have a bandgap adjusted by the interfacial region that is strained. The at least two 2D materials may include first and second 2D materials. The first 2D material may have a first bandgap in an intrinsic state thereof. The second 2D material may have a second bandgap in an intrinsic state thereof. An interfacial region of the first and second 2D materials and an adjacent region may have a third bandgap between the first bandgap and the second bandgap.
    Type: Application
    Filed: May 31, 2019
    Publication date: December 5, 2019
    Applicants: Samsung Electronics Co., Ltd., THE UNIVERSITY OF CHICAGO, Center for Technology Licensing at Cornell University
    Inventors: Minhyun LEE, Jiwoong PARK, Saien XIE, Jinseong HEO, Hyeonjin SHIN
  • Patent number: 10097281
    Abstract: A cryogenic optoelectronic data link, comprising a sending module operating at a cryogenic temperature less than 100 K. An ultrasensitive electro-optic modulator, sensitive to input voltages of less than 10 mV, may include at least one optically active layer of graphene, which may be part of a microscale resonator, which in turn may be integrated with an optical waveguide or an optical fiber. The optoelectronic data link enables optical output of weak electrical signals from superconducting or other cryogenic electronic devices in either digital or analog form. The modulator may be integrated on the same chip as the cryogenic electrical devices. A plurality of cryogenic electrical devices may generate a plurality of electrical signals, each coupled to its own modulator. The plurality of modulators may be resonant at different frequencies, and coupled to a common optical output line to transmit a combined wavelength-division-multiplexed (WDM) optical signal.
    Type: Grant
    Filed: November 18, 2016
    Date of Patent: October 9, 2018
    Assignees: Hypres, Inc., Center for Technology Licensing at Cornell University, The Trustees of Columbia University in the City of New York
    Inventors: Igor V. Vernik, Oleg A. Mukhanov, Alan M. Kadin, Christopher Thomas Phare, Michal Lipson, Keren Bergman
  • Patent number: 9736128
    Abstract: Disclosed are systems and methods for delegating computations of resource-constrained mobile clients, in which multiple servers interact to construct an encrypted program representing a garbled circuit. Implementing the garbled circuit, garbled outputs are returned. Such implementations ensure privacy of each mobile client's data, even if an executing server has been colluded. The garbled circuit provides secure cloud computing for mobile systems by incorporating cryptographically secure pseudo random number generation that enables a mobile client to efficiently retrieve a result of a computation, as well as verify that an evaluator actually performed the computation. Cloud computation and communication complexity are analyzed to demonstrate the feasibility of the proposed system for mobile systems.
    Type: Grant
    Filed: May 20, 2015
    Date of Patent: August 15, 2017
    Assignees: The Board of Regents, The University of Texas System, Center for Technology Licensing at Cornell University
    Inventors: Sriram Nandha Premnath, Zygmunt J. Haas