Patents Assigned to Centrum Badan Wysokocisnieniowych Polskiej Akademii Nauk
  • Method of fabrication of highly resistive GaN bulk crystals
    Patent number: 6273948
    Abstract: The method of fabrication of highly resistive GaN bulk crystals by crystallization from the solution of atomic nitrogen in the molten mixture of metals, containing gallium in the concentration not lower than 90 at. % and the Periodic Table group II metals: calcium, beryllium or in the concentration of 0.01-10 at. %, at the temperature 1300-1700° C., under the nitrogen pressure 0.5-2.0 GPa and in the presence of temperature gradient characterized by the temperature gradient not higher than 10° C./cm.
    Type: Grant
    Filed: December 6, 1999
    Date of Patent: August 14, 2001
    Assignee: Centrum Badan Wysokocisnieniowych Polskiej Akademii Nauk
    Inventors: Sylwester Porowski, Michal Bockowski, Izabella Grzegory, Stanislaw Krukowski, Michal Leszczynski, Boleslaw Lucznik, Tadeusz Suski, Miroslaw Wroblewski