Abstract: An object is to provide a financial or economic analysis system that is capable of representing a financial or economic situation with high accuracy. By using information received as input from an interest-rate-information acquiring means 11, a money-quantity-information acquiring means 12, a price-information acquiring means 13, and a GDP-information acquiring means 14, a computing means 15 determines data that can be replaced by a physical quantity used in electromagnetic wave analysis, and uses the data in financial or economic analysis. The data includes data representing a rotational coefficient relating to an interest rate, data representing the quantity of money, data representing a price coefficient, and a data representing a GDP.

Abstract: A computer using virtual memory management employs a random-access type storage device such as a semiconductor memory for page swapping. The semiconductor memory is formatted to provide multiple partitions of varying block size, e.g., two block sizes, for compressed pages, and another block size for uncompressed original-sized pages. The data to be stored is in pages of fixed size, and these pages are compressed for storage if the compressed size fits in the block size of one of the small-block partitions in the memory. If a data page is not compressible to one of the small block sizes, it is stored uncompressed in the other full-size partition. The operating system maintains a table storing the locations of the pages in the partitions, so upon recall the page (if compressed) is retrieved from its location found using the table, decompressed and sent to the CPU. The relative number of blocks in the partitioned memory (e.g.

Abstract: A method to produce high quality doped and undoped lead zirconate titanate (PZT) thin films by metalorganic chemical vapor deposition is disclosed. The PZT thin films with the perovskite structure were deposited on sapphire disks, Pt/Ti/SiO.sub.2 /Si wafers, and RuO.sub.x /SiO.sub.2 /Si wafers by both hot-wall and cold-wall CVD reactors at deposition temperature as low as 550.degree. C. and a reduced pressure 6 torr. The source materials include metalorganic precursors and oxidizing agent. The metalorganic precursors can be metal alkoxides, metal acetylacetonates, or metal .beta.-diketonates. Preferably, the precursors are lead tetramethylheptadione for Pb component, zirconium tetramethylheptadione for Zr component, and titanium ethoxide for Ti component and the oxidizing agent is oxygen. The stoichiometry of the films can be easily controlled by varying the individual precursor temperature and/or the flow rate of the carrier gas. The Pb(Zr.sub.0.82 Ti.sub.0.18)O.sub.

Abstract: A random-access type storage device such as a hard disk or semiconductor memory is formatted to provide multiple partitions of varying block size. The data to be stored is in blocks of fixed size, and these blocks are compressed if the compressed size fits in the block size of a small-block partition in the storage device. If a data block is not compressible to the small block size, it is stored uncompressed in another of the partitions. The memory device also contains a table storing the locations of the blocks in the partitions, so upon recall the block is retrieved from location, decompressed (if it had been compressed), and sent to the CPU. For example, there may be two partitions, one using the block size of the original (uncompressed) data, and the other having a block size corresponding to the typical compressed size of the blocks of data (perhaps one-half the size of the original data blocks). The relative number of blocks in each partition (e.g.