Abstract: The present invention relates to a pixel detector (10), comprising a semiconductor sensor layer (12), in which charges can be generated upon interaction with particles to be detected. The semiconductor layer defines an X-Y-plane and has a thickness extending in Z-direction. The detector further comprises a read-out electronics layer (14) connected to said semiconductor layer (12), said read-out electronics layer (14) comprising an array of read-out circuits (20) for detecting signals indicative of charges generated in a corresponding volume of said semiconductor sensor layer (12). The neighboring read-out circuits (20) are connected by a relative timing circuit configured to determine time difference information between signals detected at said neighboring read-out circuits (20).
Type:
Grant
Filed:
September 21, 2011
Date of Patent:
March 29, 2016
Assignees:
CERN—European Organization for Nuclear Resesarch, Friedrich-Alexander-Universitat Erlange-Nurnberg, Czech Technical University in Prague
Inventors:
Michael Campbell, Thilo Michel, Jan Jakubek