Abstract: A compound for an organic optoelectronic device represented by Chemical Formula 1: wherein groups X1 to X8, Y1, Y2, L1, L2, Ar1, Ar2, and variables m1, m2, n1, and n2 are described in the specification.

Abstract: The present invention relates to a photocured composition comprising (A) a photocurable monomer and (B) a monomer of chemical formula 1, a blocking layer comprising the same, and an encapsulated device comprising the same.

Abstract: A photocurable composition includes (A) a photocurable monomer and (B) a silicon-containing monomer or oligomer thereof, the silicon-containing monomer being represented by Formula 1

Abstract: Disclosed are an adhesive composition for polarizing plates, a polarizing plate using the same, a method for preparing the same, and an optical member including the same. The adhesive composition includes (A) a (meth)acrylic radical compound, (B) a cationic epoxy compound, (C) a phenoxy resin, and (D) a photoinitiator.

Abstract: A condensed cyclic compound represented by one of Formulae 1A to 1D: wherein in Formulae 1A to 1D, groups, substituents, and variables are as defined in the specification.

Abstract: An organometallic complex represented by Chemical Formula 1: wherein M, CyN, CyC, X1, X2, R1 to R4, R? and n are described in the specification.

Abstract: The present invention relates to: a photocurable composition containing (A) a photocurable monomer and (B) a monomer containing phosphorus and an amide group; and a device including a barrier layer formed of the composition.

Abstract: A monomer for a hardmask composition is represented by the following Chemical Formula 1,

Abstract: The present invention relates to a photocurable composition including (A) a photocurable monomer, (B) a monomer of chemical formula 1 or an oligomer thereof and (C) an initiator, a barrier layer including the same and an enveloped device including the same.

Abstract: Disclosed herein is a composition for solar cell electrodes. The composition includes a conductive powder, a glass frit, and an organic vehicle, wherein the glass frit is a bismuth oxide-tellurium oxide-zinc oxide-lithium oxide-based glass frit comprising: 5 wt % to 20 wt % of bismuth oxide; 55 wt % to 80 wt % of tellurium oxide; 0.1 wt % to 15 wt % of zinc oxide; and 0.1 wt % to 10 wt % of lithium oxide. Solar cell electrodes formed of the composition have low serial resistance (Rs) and high open voltage (Voc), thus providing high conversion efficiency and good adhesive strength with respect to a ribbon.

Abstract: A composition for solar cell electrodes includes silver powder; a silver alloy (AgX) that includes silver (Ag) and a metal (X), the silver alloy having a eutectic point of about 150° C. to about 900° C.; a glass frit; and an organic vehicle.

Abstract: Disclosed are a compound for an organic optoelectronic device, an organic light emitting diode including the same, and a display device including the organic light emitting diode. The compound for an organic optoelectronic device represented by a combination of the following Chemical Formula 1; and Chemical Formula 2 or 3 provides an organic light emitting diode having life-span characteristics due to excellent electrochemical and thermal stability, and high luminous efficiency at a low driving voltage.

Abstract: An anisotropic conductive film, the anisotropic conductive film including an insulating layer and a conductive layer laminated on the insulating layer, the conductive layer containing conductive particles, wherein after glass substrates are positioned to face each other on the upper and lower surface of the anisotropic conductive film and are pressed against the anisotropic conductive film at 3 MPa (based on the sample area) and 160° C. (based on the detection temperature of the anisotropic conductive film) for 5 sec, a ratio of the area of the insulating layer to that of the conductive layer is from about 1.3:1 to about 3.0:1.

Abstract: Disclosed are a compound for an organic optoelectronic device, an organic light emitting diode including the same, and a display device including the organic light emitting diode. The compound for an organic optoelectronic device represented by a combination of the following Chemical Formula 1 and Chemical Formula 2 provides an organic light emitting diode having life-span characteristics due to excellent electrochemical and thermal stability, and high luminous efficiency at a low driving voltage.

Abstract: An optical film includes: a high refractive index pattern layer including a material having a refractive index greater than about 1, where a plurality of grooves, each having a curved groove surface and a depth greater than a width thereof, is defined on a first surface of the high refractive index pattern layer, the plurality of grooves defines a pattern, the plurality of grooves are two-dimensionally arranged in a first direction and a second direction, and a first distance between adjacent grooves in the first direction and a second distance between adjacent grooves in the second direction are different from each other; and a low refractive index pattern layer including a material having a refractive index less than the refractive index of the high refractive index pattern layer and further including a plurality of fillers which fills the plurality of grooves, respectively.

Abstract: Disclosed is an organic optoelectric device, including an anode and a cathode facing each other, an emission layer interposed between the anode and the cathode, a hole transport layer interposed between the anode and the emission layer, and a hole transport auxiliary layer interposed between the hole transport layer and the emission layer. The emission layer includes at least one first compound represented by Chemical Formula 1: The emission layer further includes at least one second compound represented by Chemical Formula 2: The hole transport auxiliary layer includes a third compound represented by Chemical Formula 2, the third compound being the same as or different from the second compound.

Abstract: An optical film includes a high refractive index pattern layer including a material having a refractive index greater than about 1, wherein a groove pattern defined by grooves, each of which has a curved groove surface and a depth greater than a width, is defined on a first surface of the high refractive index pattern, the grooves are two-dimensionally arranged in a first direction and a second direction, and a cross-sectional shape of each of the grooves has an anisotropic shape, in which a length in a first axial direction and a length in a second axial direction, which is perpendicular to the first axial direction, are different from each other, and a low refractive index pattern layer including a material having a refractive less than the refractive index of the high refractive index pattern layer and further including fillers corresponding to the grooves.

Abstract: A condensed cyclic compound represented by Formula 1: wherein in Formula 1, Groups X1 to X3, L11, L12, R11, and R12, and variables a11, a12, b11, b12, c11, and c12 are described in the specification.

Abstract: An optical film includes: a liquid crystal coating; and a base layer on the liquid crystal coating, wherein the liquid crystal coating has reversed wavelength dispersion and in-plane retardation for a reference wavelength ranging from 126 nm to 153 nm, and the base layer has in-plane retardation ranging from about 0 to about 50 nm and out-of-plane retardation ranging from about 0 nm to about 100 nm.

Abstract: An adhesive composition for semiconductors, an adhesive film, and a semiconductor device, wherein, in a curing process including a first stage at a temperature ranging from 120° C. to 130° C. for 1 to 20 minutes, a second stage at a temperature ranging from 140° C. to 150° C. for 1 to 10 minutes, a third stage at a temperature ranging from 160° C. to 180° C. for 30 seconds to 10 minutes, and a fourth stage at a temperature ranging from 160° C. to 180° C. for 10 minutes to 2 hours, the adhesive film has a DSC curing rate in the first stage that is 40% or less of a total curing rate, a DSC curing rate in the fourth stage that is 30% to 60% higher than a DSC curing rate in the third stage, and DSC curing rates in each of the second and third stages that are 5% or more higher than a DSC curing rate of a preceding stage thereof.