Abstract: A substrate processing device, which processes by immersing the substrate in the processing liquid comprising a mixture of a chemical and a diluting liquid, is provided with: a processing tank (1) that retains the processing liquid; heating means (2, 3) that heat the processing liquid; a temperature detection means (4) that detects the temperature of the processing liquid; a temperature control means (5) that operates the aforementioned heating means (2, 3) in a manner so that the detected temperature approaches a set temperature; a replenishing means (6) that replenishes the diluting liquid in the processing liquid; a concentration detection means (7) that detects the concentration of the processing liquid by measuring the light absorption characteristics of the processing liquid; and a concentration control means (8) that operates the aforementioned replenishing means (6) in a manner so that the detected concentration approaches a set concentration.

Abstract: A substrate processing device, which processes by immersing the substrate in the processing liquid comprising a mixture of a chemical and a diluting liquid, is provided with: a processing tank (1) that retains the processing liquid; heating means (2, 3) that heat the processing liquid; a temperature detection means (4) that detects the temperature of the processing liquid; a temperature control means (5) that operates the aforementioned heating means (2, 3) in a manner so that the detected temperature approaches a set temperature; a replenishing means (6) that replenishes the diluting liquid in the processing liquid; a concentration detection means (7) that detects the concentration of the processing liquid by measuring the light absorption characteristics of the processing liquid; and a concentration control means (8) that operates the aforementioned replenishing means (6) in a manner so that the detected concentration approaches a set concentration.

Abstract: This invention intends to enable silicon compound to be removed from waste etching solution at a high removal rate and waste etching solution to be recycled without disposing it. The etching solution reproducing apparatus includes: temperature adjusting means for adjusting the temperature of taken out waste etching solution; atomizing means for atomizing waste etching solution adjusted in temperature by the temperature adjusting means; precipitating means for collecting waste etching solution atomized by the atomizing means and precipitating silicon compound in the waste etching solution; and separating means for separating silicon compound precipitated from the waste etching solution by the precipitating means so as to obtain reproduced etching solution.

Abstract: This invention intends to enable silicon compound to be removed from waste etching solution at a high removal rate and waste etching solution to be recycled without disposing it. The etching solution reproducing apparatus includes: temperature adjusting means for adjusting the temperature of taken out waste etching solution; atomizing means for atomizing waste etching solution adjusted in temperature by the temperature adjusting means; precipitating means for collecting waste etching solution atomized by the atomizing means and precipitating silicon compound in the waste etching solution; and separating means for separating silicon compound precipitated from the waste etching solution by the precipitating means so as to obtain reproduced etching solution.

Abstract: Provided is a processing method capable of reliably processing the inside of a depression such as a trench, a contact hole, a deep pattern, or a pore of a porous substrate. A chemical solution M is supplied into a processing bath 1 placing a substrate W, and the processing bath 1 is repetitively evacuated and pressurized several times at a pressure lower than the atmospheric pressure. Alcohol X is brought into contact with the surface of the substrate W and supplied into a depression W?1. The chemical solution M is supplied into the processing bath 1 containing the substrate W until the chemical solution M reaches a water level at which the substrate W is dipped, thereby allowing the chemical solution M to enter the depression W?1. The chemical solution M is discharged from the processing bath 1, and a portion of the chemical solution M entering the depression W?1 and mixed with the alcohol X is evaporated by evacuating the processing bath 1. This process is repeated several times.

Abstract: Provided is a processing method capable of reliably processing the inside of a depression such as a trench, a contact hole, a deep pattern, or a pore of a porous substrate. A chemical solution M is supplied into a processing bath 1 placing a substrate W, and the processing bath 1 is repetitively evacuated and pressurized several times at a pressure lower than the atmospheric pressure. Alcohol X is brought into contact with the surface of the substrate W and supplied into a depression W-1. The chemical solution M is supplied into the processing bath 1 containing the substrate W until the chemical solution M reaches a water level at which the substrate W is dipped, thereby allowing the chemical solution M to enter the depression W-1. The chemical solution M is discharged from the processing bath 1, and a portion of the chemical solution M entering the depression W-1 and mixed with the alcohol X is evaporated by evacuating the processing bath 1. This process is repeated several times.