Abstract: The present invention relates to a technique of semiconductor devices, and provides a semiconductor device, which uses two controllable current sources to control the electron current and the hole current of the voltage-sustaining region of a thyristor under conduction state, making the sum of the two currents from anode to cathode close to a saturated value under high voltage, thus avoiding the current crowding effect in local region and increasing the reliability of the device. Besides, it further provides a method of implementing the two current sources in the device and a method to improve the switching speed.

Abstract: The present invention relates to a technique of semiconductor devices, and provides a semiconductor device, which uses two controllable current sources to control the electron current and the hole current of the voltage-sustaining region of a thyristor under conduction state, making the sum of current between anode and cathode close to saturation under high voltage, thus avoiding the current crowding effect in local region and increasing the reliability of the device. Besides, it further provides a method of implementing the two current sources in the device and a method to improve the switching speed.