Abstract: The present invention provides compounds comprising at least one unit of formula (1) or (1?) as well as a process for the preparation of the compounds, intermediates of this process, electronic devices comprising the compounds, and the use of the compounds as semiconducting materials.

Abstract: The invention relates to thin metal electrode films for use in high-performance device systems comprising: a substrate; an underlayer; and a primer layer coated with metal coating. The thin metal electrode film has metal wiring with high resolution on a substrate and thus has excellent electrical properties. The invention also relates to a method for manufacturing thin metal electrode film.

Abstract: The present invention relates to a process for the preparation of a top-gate, bottom-contact organic field effect transistor on a substrate, which organic field effect transistor comprises source and drain electrodes, a semiconducting layer, a cured first dielectric layer and a gate electrode, and which process comprises the steps of: i) applying a composition comprising an organic semiconducting material to form the semiconducting layer, ii) applying a composition comprising a first dielectric material and a crosslinking agent carrying at least two azide groups to form a first dielectric layer, iii) curing portions of the first dielectric layer by light treatment, iv) removing the uncured portions of the first dielectric layer, and v) removing the portions of the semiconducting layer that are not covered by the cured first dielectric layer, wherein the first dielectric material comprises a star-shaped polymer consisting of at least one polymer block A and at least two polymer blocks B, wherein each polymer b

Abstract: Polymers comprising at least one unit of formulae and compounds of the formulae wherein, in formulae 1, 1?, 2 and 2? n is 0, 1, 2, 3 or 4 m is 0, 1, 2, 3 or 4 M1 and M2 are independently of each other an aromatic or heteroaromatic monocyclic or bicyclic ring system; X is at each occurrence selected from the group consisting of O, S, Se or Te, Q is at each occurrence selected from the group consisting of C, Si or Ge R is at each occurrence selected from the group consisting of hydrogen, C1-100-alkyl, C2-100-alkenyl, C2-100-alkynyl, C5-12-cycloalkyl, C6-18-aryl, a 5 to 20 membered heteroaryl, C(O)—C1-100-alkyl, C(O)—C5-12-cycloalkyl and C(O)—OC1-100-alkyl.

Abstract: The present invention relates to a process for the preparation of a top-gate, bottom-contact organic field effect transistor on a substrate, which organic field effect transistor comprises source and drain electrodes, a semiconducting layer, a cured first dielectric layer and a gate electrode, and which process comprises the steps of: i) applying a composition comprising an organic semiconducting material to form the semiconducting layer, ii) applying a composition comprising a first dielectric material and a crosslinking agent carrying at least two azide groups to form a first dielectric layer, iii) curing portions of the first dielectric layer by light treatment, iv) removing the uncured portions of the first dielectric layer, and v) removing the portions of the semiconducting layer that are not covered by the cured first dielectric layer, wherein the first dielectric material comprises a star-shaped polymer consisting of at least one polymer block A and at least two polymer blocks B, wherein each polymer b

Abstract: The present invention relates to polymers comprising a repeating unit of the formula—[Ar3]c—[Ar2]b—[Ar1]a—Y(R1)n1 (R2)n2—[Ar1?]a—[Ar2?]b?—[Ar3?]c?— (I), wherein ? is a bivalent heterocyclic group, or ring system, which may optionally be substituted, Ar1, Ar1?Ar2, Ar2?, Ar3 and Ar3? are independently of each other a C6-C24 arylen group, which can optionally be substituted, or a C2-C30 heteroarylen group, which can optionally be, Formula (1), substituted; at least one of R1 and R2 is a group of formula (II); and their use as organic semiconductor in organic devices, especially in organic photovoltaics and photodiodes, or in a device containing a diode and/or an organic field effect transistor. The polymers according to the invention can have excellent solubility in organic solvents and excellent film-forming properties.

Abstract: The present invention provides compounds of formulae (1) (2) wherein R1 and R2 are C1-30alkyl, C2-3O-alkenyl, C2-30-alkynyl, C5-7-cycloalkyl, C6-14-aryl or 5 to 14 membered heteroaryl, wherein C1-30-alkyl, C2-3O-alkenyl and C2-3O-alkynyl can be substituted with one or more substituents selected from the group consisting of halogen, phenyl, O—C1-20-alkyl, O—C2-20-alkenyl and O—C2-2O-alkynyl, and wherein C5-7-cycloalkyl, C6-14-aryl and 5 to 14 membered heteroaryl can be substituted with one or more substituents selected from the group consisting of halogen, C1-20alkyl, C2-2O-alkenyl, C2-2O-alkynyl, O—C1-20-alkyl, O—C2-2o-alkenyl and O—C2-2o-alkynyl, Ra, Rb, Rc and Rd are independently and at each occurrence selected from the group consisting of C1-30alkyl, C2-30-alkenyl, C2-30-alkynyl, C6-14-aryl and 5 to 14 membered heteroaryl, wherein C1-30-alkyl, C2-3o-alkenyl and C2-3o-alkynyl can be substituted with one or more substituents selected from the group consisting of halogen, phenyl, O—C1-20-alkyl, O—C2-20-alken

Abstract: The present invention relates to a process for the preparation of a top-gate, bottom-contact organic field effect transistor on a substrate, which organic field effect transistor comprises source and drain electrodes, a semiconducting layer, a cured first dielectric layer and a gate electrode, and which process comprises the steps of: i) applying a composition comprising an organic semiconducting material to form the semiconducting layer, ii) applying a composition comprising a first dielectric material and a crosslinking agent carrying at least two azide groups to form a first dielectric layer, iii) curing portions of the first dielectric layer by light treatment, iv) removing the uncured portions of the first dielectric layer, and v) removing the portions of the semiconducting layer that are not covered by the cured first dielectric layer, wherein the first dielectric material comprises a star-shaped polymer consisting of at least one polymer block A and at least two polymer blocks B, wherein each polymer b

Abstract: The present invention provides a process for manufacturing an electronic device comprising a semiconducting layer, which process comprises i) a step of applying a composition comprising at least a compound of formulae (1A)-(1B)-(1C) on a precursor of the electronic device in order to form a layer, and ii) a step of treating the layer of step i) with light in order to form a semiconducting layer, we well as a compound of formula 1A, 1B or 1C, compositions comprising at least one compound of formula 1A, 1B or 1C, and the use of at least one compound of formula 1A, 1B or 1C as photocleavable precursor for organic semiconducting materials.

Abstract: The present invention provides polymers comprising units of formula (1) as well as compositions comprising the polymers, processes for the preparation of the polymers, electronic devices comprising the polymers, and processes for the preparation of the electronic devices, and the use of the polymers as dielectric materials.

Abstract: The present invention relates to a process for the preparation of a top-gate, bottom-contact organic field effect transistor on a substrate, which organic field effect transistor comprises source and drain electrodes, a semiconducting layer, a cured first dielectric layer and a gate electrode, and which process comprises the steps of: i) applying a composition comprising an organic semiconducting material to form the semiconducting layer, ii) applying a composition comprising a first dielectric material and a crosslinking agent carrying at least two azide groups to form a first dielectric layer, iii) curing portions of the first dielectric layer by light treatment, iv) removing the uncured portions of the first dielectric layer, and v) removing the portions of the semiconducting layer that are not covered by the cured first dielectric layer, wherein the first dielectric material comprises a star-shaped polymer consisting of at least one polymer block A and at least two polymer blocks B, wherein each polymer b

Abstract: The present invention provides organic field effect transistors comprising a double layer consisting of i) a first layer comprising a percolating network of single-walled carbon nanotubes having a content of at least 95% by weight of semiconducting single-walled carbon nanotubes, and ii) a second layer comprising an organic semiconducting material, as well as a process for the preparation of the organic field effect transistor.

Abstract: The present invention provides a process for manufacturing an electronic device comprising a semiconducting layer, which process comprises i) a step of applying a composition comprising at least a compound of formulae (1A)-(1B)-(1C) on a precursor of the electronic device in order to form a layer, and ii) a step of treating the layer of step i) with light in order to form a semiconducting layer, we well as a compound of formula 1A, 1B or 1C, compositions comprising at least one compound of formula 1A, 1B or 1C, and the use of at least one compound of formula 1A, 1B or 1C as photocleavable precursor for organic semiconducting materials.

Abstract: The present invention provides compounds of formulae (1) (2) wherein R1 and R2 are C1-30alkyl, C2-3O-alkenyl, C2-30-alkynyl, C5-7-cycloalkyl, C6-14-aryl or 5 to 14 membered heteroaryl, wherein C1-30-alkyl, C2-3O-alkenyl and C2-3O-alkynyl can be substituted with one or more substituents selected from the group consisting of halogen, phenyl, O—C1-20-alkyl, O—C2-20-alkenyl and O—C2-2O-alkynyl, and wherein C5-7-cycloalkyl, C6-14-aryl and 5 to 14 membered heteroaryl can be substituted with one or more substituents selected from the group consisting of halogen, C1-20alkyl, C2-2O-alkenyl, C2-2O-alkynyl, O—C1-20-alkyl, O—C2-2o-alkenyl and O—C2-2o-alkynyl, Ra, Rb, Rc and Rd are independently and at each occurrence selected from the group consisting of C1-30alkyl, C2-30-alkenyl, C2-30-alkynyl, C6-14-aryl and 5 to 14 membered heteroaryl, wherein C1-30-alkyl, C2-3o-alkenyl and C2-3o-alkynyl can be substituted with one or more substituents selected from the group consisting of halogen, phenyl, O—C1-20-alkyl, O—C2-20-alken

Abstract: Polymers comprising at least one unit of formula 1 and compounds of the formula 1? wherein, in formulae 1 and 1? n is 0, 1, 2, 3 or 4 m is 0, 1, 2, 3 or 4 X is at each occurrence selected from the group consisting of O, S, Se or Te, Q is at each occurrence selected from the group consisting of C, Si or Ge R is at each occurrence selected from the group consisting of hydrogen, C1-30-alkyl, C2-30-alkenyl, C2-30-alkynyl, C5-12-cycloalkyl, C6-18-aryl, R2, R2?, R* are at each occurrence independently selected from the group consisting of hydrogen, C1-30-alkyl, C2-30-alkenyl, C2-30-alkynyl, C5-12-cycloalkyl, C6-18-aryl, 5 to 20 membered hetero-aryl, OR21, OC(O)—R21, C(O)—OR21, C(O)—R21, NR21R22, NR21—C(O)R22, C(O)—NR21R22, N[C(O)R21][C(O)R22], SR21, halogen, CN, SiRSisRSitRSiu and OH, L1 and L2 are independently from each other and at each occurrence selected from the group consisting of C6-30-arylene, 5 to 30 membered heteroarylene.

Abstract: The present invention relates to a method for the deposition of at least one layer of an organic material on a substrate by (a) providing a source of a solid organic material in an atmosphere at a pressure comprised between 50 and 200 kPa, (b) heating said organic material to a first temperature to produce a vapor of said organic material, (c) exposing at least one surface of a substrate having a second temperature lower than said first temperature to said vapor to deposit organic material from said vapor onto said at least one surface of said substrate.

Abstract: The present invention relates to a method for separating semi-conducting and metallic single-walled carbon nanotubes from each other and, if present, from other carbonaceous material, or for separating semi-conducting or metallic single-walled carbon nanotubes from other carbonaceous material via density separation using a solution of a polytungstate; to semi-conducting or metallic single-walled carbon nanotubes obtained by this method; and to the use of these semi-conducting or metallic single-walled carbon nanotubes.