Abstract: A memory storage and retrieval device, comprising:

Abstract: A memory storage and retrieval device, comprising:

Abstract: A novel memory cell is provided with an active region including a molecular system and ionic complexes distributed in the molecular system. A pair of write electrodes are arranged for writing information to the memory cell. The active region is responsive to an electric field applied between the pair of write electrodes for switching between an on state and an off state. The active region has a high impedance in the off state and a low impedance in the on state. A pair of read electrodes is used to detect whether the active region is in the on state or in the off state to read the information from the memory cell. Read electrodes may be made of different materials having different work functions to reduce leakage current.

Abstract: A memory cell is provided with a pair of electrodes, and an active layer sandwiched between the electrodes and including a molecular system and ionic complexes distributed in the molecular system. The active layer having a high-impedance state and a low-impedance state switches from the high-impedance state to the low-impedance state when an amplitude of a writing signal exceeds a writing threshold level, to enable writing information into the memory cell. The active layer switches from the low-impedance state to the high-impedance state when an amplitude of an erasing signal having opposite polarity with respect to the writing signal exceeds an erasing threshold level, to enable erasing information from the memory cell.

Abstract: A programmable interconnect structure and method of operating the same provides a programmable interconnection between electrical contacts. The interconnect includes material that has a reversibly programmable resistance. The material includes a molecular matrix with ionic complexes distributed through the molecular matrix. Application of an electrical field or electric current causes the molecular composite material to assume a desired resistivity (or conductivity) state. This state is retained by the molecular composite material to thus form a conductive or a non-conductive path between the electrical contacts.

Abstract: A memory device with multi-bit memory cells and method of making the same uses self-assembly to provide polymer memory cells on the contacts to a transistor array. Employing self-assembly produces polymer memory cells at the precise locations of the contacts of the transistor array. The polymer memory cells change resistance values in response to electric current above a specified threshold value. The memory cells retain the resistivity values over time.

Abstract: A novel switching device is provided with an active region arranged between first and second electrodes and including a molecular system and ionic complexes distributed in the system. A control electrode is provided for controlling an electric field applied to the active region, which switches between a high-impedance state and a low-impedance state when the electrical field having a predetermined polarity and intensity is applied for a predetermined time.

Abstract: A floating gate memory device has a floating gate and an insulating layer on the floating gate. A control gate is on the insulating layer. The insulating layer is made up of a molecular matrix with ionic complexes distributed in the molecular matrix. By the application of an electric field, the ionic complexes are dissociable in the molecular matrix to change the resistivity (or conductivity) of the insulating layer. By switching between a high resistivity (low conductivity) state, where charge is retained by the floating gate, to a low resistivity (high conductivity) state, the charge stored on the floating gate can readily drained off to the gate electrode.