Abstract: The present disclosure relates to plasma generation systems particularly applicable to systems which utilize plasma for semiconductor processing. A plasma generation system consistent with the present disclosure includes an arc suppression device coupled to the RF generator. The arc device includes switches that engage upon a triggering signal. In addition, the arc device includes a power dissipater to be engaged by the set of switches to dissipate both stored and delivered energy when the set of switches engage. The arc suppression device also includes an impedance transformer coupled to the power dissipater to perform an impedance transformation that, when the switches are engaged in conjunction with the power dissipater, reduces the reflection coefficient at the input of the device. The plasma generation system further includes a matching network coupled to the radio frequency generator and a plasma chamber coupled to the matching network.

Abstract: The present disclosure may include a method for calibrating a capacitor in a matching network in a radio frequency plasma processing device, the method including. The method may include identifying the capacitor in the matching network, measuring the impedance of the matching network as a whole, and driving the capacitor from a zero step value to a predefined step value. The method may further include measuring impedance at each step between the zero step value and the predefined step value, identifying the measured impedance for each step value to a predefined impedance curve, and matching a capacitor position to a specific impedance based on the identifying the measured impedance for each step value to the predefined impedance curve. Calibration of matching networks may also be enhanced by optimizing the steps to percentage reported ratio in the range of capacitor values most frequently used.

Abstract: A radio frequency plasma processing system including a reaction chamber, a pedestal disposed in the reaction chamber, and a plurality of sector plates disposed azimuthally around the pedestal in an annulus between the pedestal and the reaction chamber.

Abstract: A method for repetitive tuning of a matching network in a radio frequency plasma processing device, the method including detecting a condition within the matching network and determining if the condition is a known condition for the matching network. Also, finding a prior solution and to the condition when the condition is the known condition for the matching network; and replicating the prior solution for the condition in the matching network.

Abstract: A physical vapor deposition system may include an RF generator configured to transmit an AC process signal to a physical vapor deposition chamber via an RF matching network. A controller of the RF matching network receives the DC magnitude and phase error signals and varies an impedance of the RF matching network in response to the DC magnitude and phase error signals. The matching network operates in a first mode until a tuning dead-zone is determined. Once a tuning dead-zone is determined, the matching network operates in additional modes until the network is tuned. The controller uses a composite value of magnitude and phase error to drive the variable tuning and load capacitors. In some cases, a blended mode (representing multiple tuning algorithms concurrently) may be implemented as a single mode that weights across what would have been multiple modes and thereby tunes the network using a weighted blended mode.

Abstract: The present disclosure relates to plasma generation systems which utilize plasma for semiconductor processing. The plasma generation system disclosed herein employs a hybrid matching network. The plasma generation system includes a RF generator and a matching network. The matching network includes a first-stage to perform low-Q impedance transformations during high-speed variations in impedance. The matching network includes a second-stage to perform impedance matching for high-Q impedance transformations. The matching network further includes a sensor coupled to the first-stage and the second-stage to calculate the signals that are used to engage the first and second-stages. The matching network includes a first-stage network that is agile enough to tune each state in a modulated RF waveform and a second-stage network to tune a single state in a RF modulated waveform. The plasma generation system also includes a plasma chamber coupled to the matching network.

Abstract: A physical vapor deposition system may include an RF generator configured to transmit an AC process signal to a physical vapor deposition chamber via an RF matching network. A controller of the RF matching network is configured to receive the DC magnitude and phase error signals and to vary an impedance of the RF matching network in response to the DC magnitude and phase error signals. The matching network operates in a first mode until a tuning dead-zone is determined. Once a tuning dead-zone is determined, the matching network operates in additional modes until the network is tuned. The controller uses a composite value of magnitude and phase error to drive of the variable tuning and load capacitors.

Abstract: The present disclosure relates to plasma generation systems which utilize plasma for semiconductor processing. The plasma generation system disclosed herein employs a hybrid matching network. The plasma generation system includes a RF generator and a matching network. The matching network includes a first-stage to perform low-Q impedance transformations during high-speed variations in impedance. The matching network includes a second-stage to perform impedance matching for high-Q impedance transformations. The matching network further includes a sensor coupled to the first-stage and the second-stage to calculate the signals that are used to engage the first and second-stages. The matching network includes a first-stage network that is agile enough to tune each state in a modulated RF waveform and a second-stage network to tune a single state in a RF modulated waveform. The plasma generation system also includes a plasma chamber coupled to the matching network.

Abstract: The present disclosure relates to plasma generation systems particularly applicable to systems which utilize plasma for semiconductor processing. A plasma generation system consistent with the present disclosure includes an arc suppression device coupled to the RF generator. The arc device includes switches that engage upon a triggering signal. In addition, the arc device includes a power dissipater to be engaged by the set of switches to dissipate both stored and delivered energy when the set of switches engage. The arc suppression device also includes an impedance transformer coupled to the power dissipater to perform an impedance transformation that, when the switches are engaged in conjunction with the power dissipater, reduces the reflection coefficient at the input of the device. The plasma generation system further includes a matching network coupled to the radio frequency generator and a plasma chamber coupled to the matching network.

Abstract: The present disclosure relates to plasma generation systems particularly applicable to systems which utilize plasma for semiconductor processing. A plasma generation system consistent with the present disclosure includes an arc suppression device coupled to the RF generator. The arc device includes switches that engage upon a triggering signal. In addition, the arc device includes a power dissipater to be engaged by the set of switches to dissipate both stored and delivered energy when the set of switches engage. The arc suppression device also includes an impedance transformer coupled to the power dissipater to perform an impedance transformation that, when the switches are engaged in conjunction with the power dissipater, reduces the reflection coefficient at the input of the device. The plasma generation system further includes a matching network coupled to the radio frequency generator and a plasma chamber coupled to the matching network.

Abstract: The present disclosure relates to plasma generation systems which utilize plasma for semiconductor processing. The plasma generation system disclosed herein employs a hybrid matching network. The plasma generation system includes a RF generator and a matching network. The matching network includes a first-stage to perform low-Q impedance transformations during high-speed variations in impedance. The matching network includes a second-stage to perform impedance matching for high-Q impedance transformations. The matching network further includes a sensor coupled to the first-stage and the second-stage to calculate the signals that are used to engage the first and second-stages. The matching network includes a first-stage network that is agile enough to tune each state in a modulated RF waveform and a second-stage network to tune a single state in a RF modulated waveform. The plasma generation system also includes a plasma chamber coupled to the matching network.

Abstract: The present disclosure relates to plasma generation systems particularly applicable to systems which utilize plasma for semiconductor processing. A plasma generation system consistent with the present disclosure includes an arc suppression device coupled to the RF generator. The arc device includes switches that engage upon a triggering signal. In addition, the arc device includes a power dissipater to be engaged by the set of switches to dissipate both stored and delivered energy when the set of switches engage. The arc suppression device also includes an impedance transformer coupled to the power dissipater to perform an impedance transformation that, when the switches are engaged in conjunction with the power dissipater, reduces the reflection coefficient at the input of the device. The plasma generation system further includes a matching network coupled to the radio frequency generator and a plasma chamber coupled to the matching network.

Abstract: Novel water-based electron beam (EB) curable inkjet inks along with printed substrates, drying processes, and printing equipment are disclosed. The inks are effectively dried by EB energy alone or in combination with optional thermal drying.

Abstract: A plasma processing system may include a radio frequency (RF) generator configured to supply a pulsing process signal to a target in a plasma processing chamber via a RF matching network. A phase and magnitude detector circuit is coupled to the RF generator and configured to sense the pulsing process signal and output a magnitude error signal and a phase error signal. A pulse tracking circuit is electrically coupled to the phase and magnitude detector circuit and configured to receive the magnitude error signal and the phase error signal and output a tracked magnitude signal and a tracked phase signal. A match controller is electrically coupled to the pulse tracking circuit and the RF matching network and configured to receive the tracked magnitude signal and the tracked phase signal and vary an impedance of the RF matching network in response to the tracked magnitude and phase signals.

Abstract: A physical vapor deposition system may include an RF generator configured to transmit an AC process signal to a physical vapor deposition chamber via an RF matching network. A detector circuit may be configured to sense the AC process signal and output a DC magnitude error signal and a DC phase error signal. A controller may be coupled to the detector circuit and the RF matching network and configured to receive the DC magnitude and phase error signals and to vary an impedance of the RF matching network in response to the DC magnitude and phase error signals.

Abstract: A physical vapor deposition system may include an RF generator configured to supply a pulsing AC process signal to a target in a physical vapor deposition chamber via the RF matching network. A detector circuit may be coupled to the RF generator and configured to sense the pulsing AC process signal and to produce a corresponding pulsing AC voltage magnitude signal and pulsing AC current magnitude signal. An envelope circuit may be electrically coupled to the detector circuit and configured to receive the pulsing AC voltage and current magnitude signals and to produce a DC voltage envelope signal and a DC current envelope signal. A controller may be electrically coupled to the envelope circuit and the RF matching network and configured to receive the DC voltage and current envelope signals and to vary an impedance of the RF matching network in response to the DC voltage and current envelope signals.

Abstract: A physical vapor deposition system may include an RF generator configured to transmit an AC process signal to a physical vapor deposition chamber via an RF matching network. A detector circuit may be configured to sense the AC process signal and output a DC magnitude error signal and a DC phase error signal. A controller may be coupled to the detector circuit and the RF matching network and configured to receive the DC magnitude and phase error signals and to vary an impedance of the RF matching network in response to the DC magnitude and phase error signals.

Abstract: A physical vapor deposition system may include an RF generator configured to supply a pulsing AC process signal to a target in a physical vapor deposition chamber via the RF matching network. A detector circuit may be coupled to the RF generator and configured to sense the pulsing AC process signal and to produce a corresponding pulsing AC voltage magnitude signal and pulsing AC current magnitude signal. An envelope circuit may be electrically coupled to the detector circuit and configured to receive the pulsing AC voltage and current magnitude signals and to produce a DC voltage envelope signal and a DC current envelope signal. A controller may be electrically coupled to the envelope circuit and the RF matching network and configured to receive the DC voltage and current envelope signals and to vary an impedance of the RF matching network in response to the DC voltage and current envelope signals.

Abstract: A physical vapor deposition system may include an RF generator configured to transmit an AC process signal to a physical vapor deposition chamber via an RF matching network. A detector circuit may be configured to sense the AC process signal and output a DC magnitude error signal and a DC phase error signal. A controller may be coupled to the detector circuit and the RF matching network and configured to receive the DC magnitude and phase error signals and to vary an impedance of the RF matching network in response to the DC magnitude and phase error signals.

Abstract: A physical vapor deposition system may include an RF generator configured to supply a pulsing AC process signal to a target in a physical vapor deposition chamber via the RF matching network. A detector circuit may be coupled to the RF generator and configured to sense the pulsing AC process signal and to produce a corresponding pulsing AC voltage magnitude signal and pulsing AC current magnitude signal. An envelope circuit may be electrically coupled to the detector circuit and configured to receive the pulsing AC voltage and current magnitude signals and to produce a DC voltage envelope signal and a DC current envelope signal. A controller may be electrically coupled to the envelope circuit and the RF matching network and configured to receive the DC voltage and current envelope signals and to vary an impedance of the RF matching network in response to the DC voltage and current envelope signals.