Abstract: A converter includes a coil of axis XX?, a multi-pole magnet, arranged in such a way that the magnetic polarities of two adjacent magnetised zones are oriented so that they are anti-parallel, a ferromagnetic field frame comprising a frame and a main section, the field frame further comprising a main air gap located on the main section, and a first lateral air gap and a second lateral air gap which are located on the frame, the main air gap, the first lateral air gap and the second lateral air gap being arranged in such a way as to form a guide member in which the multi-pole magnet is inserted by sliding, and in such a way as to allow a magnetic coupling of three successive magnetised zones with, respectively, the first lateral air gap, the main air gap, and the second lateral air gap.

Abstract: The invention relates to a method for observing a sample (15), comprising the illumination of the sample using a light source (11) and the acquisition of an image (Io) of the sample using an image sensor (16), the sample being disposed between the image sensor and the light source. Iterative steps are applied to the acquired image (Io), also referred to as a hologram, comprising: a single iterative numerical propagation (h), such as to estimate a complex image (A) of the sample in a reconstruction plane (P10) or in a detection plane (P0), in which the image sensor extends. The complex image can be used for the characterisation of the sample.

Abstract: A subject matter of the invention relates to a method for obtaining at least one semi-polar layer (480) of nitride (N) on an upper surface of a crystalline layer (300), the method comprising the steps of: etching parallel grooves (320) starting from the upper surface of the crystalline substrate (300), each groove (320) comprising at least one facet (310) having a crystalline orientation {111}; forming a mask (331) such that the facets (311) opposite to said facets (310) having a crystalline orientation {111} are masked and that said facets (310) having a crystalline orientation {111} are not masked; at least one first epitaxial growth phase, carried out from said non-masked facets (310) in such a way as to form a seed (440); interruption of the first epitaxial growth phase when said seed (440) has an inclined facet (442) having a crystalline orientation (0001) and an upper facet (441) having a crystalline orientation (1011); a surface treatment step comprising a modification of an upper portion of the see

Abstract: The main subject of the invention is a system (10) for clamping a high-temperature SOEC/SOFC stack (11), characterised in that it includes: an upper clamping plate (12) and a lower clamping plate (13) between which the stack (11) is intended to be clamped, each plate including at least one clamping orifice (14); at least one clamping rod (15) intended to extend through clamping orifices (14) in the upper and lower clamping plates (12, 13) in order to allow them to be assembled; clamping means (16, 17, 18, 20, 21) level with each clamping orifice (14), which means are intended to interact with said at least one clamping rod (15); and at least one electrically insulating plate (19) that is intended to be located between the stack (11) and at least one of the upper and lower clamping plates (12, 13).

Abstract: The invention concerns an assembly method comprising the following steps: a) providing a first substrate comprising a first face made from crystalline indium phosphide, b) providing a second substrate comprising a second crystalline face different from the indium phosphide, c) forming an intermediate layer of crystalline indium phosphide on the second face of the second substrate, d) forming an assembly, via a direct bonding step, by bringing the first face of the first substrate into contact with the intermediate layer, the direct bonding step being carried out in an atmosphere having a pressure greater than 10?4 Pa, and preferably higher than 10?3 Pa, e) subjecting the assembly formed in step d) to heat treatment.

Abstract: A diode including: first and second doped semi-conductor portions forming a p-n junction, a first part of the first portion being arranged between a second part of the first portion and the second portion; dielectric portions covering side walls of the second portion and the first part of the first portion; a first electrode arranged against outer side walls of the dielectric portions and against side walls of the second part of the first portion, electrically connected to the first portion only by contact with said side walls, and passing through the entire thickness of the first portion; a second optically reflecting electrode electrically connected to the second portion such that the second portion is arranged between the second electrode and the first portion.

Abstract: A moisture responsive device is described having a moisture responsive element comprising at least a moisture responsive formation of a first material in association with a less moisture responsive formation of a second material, in that the first material has a greater tendency to absorb moisture and to increase in volume as a result than the second material, the two formations being so mechanically arranged together that such swelling tends to cause mechanical deformation of the moisture responsive element; and an actuation member optionally of flexibly resilient material in mechanical association with the moisture responsive element so that distortion of the moisture responsive element in the presence of moisture tends to mechanically distort the actuation member and thereby cause the actuation member to change between at least a first functional state and a second functional state. A method of use, especially in irrigation control, is also described.