Abstract: The invention relates to a semiconductor structure, including: a semiconductor layer, including a membrane suspended above a carrier layer, the suspended membrane being formed of a central section, which is tensilely stressed and of a plurality of tensioning arms; and least one optical cavity, bounded by two optical reflectors, which are placed in the lateral sections on either side of the central section; wherein: the central section is designed to transmit in the direction of the optical reflectors at least one uneven-order mode; and each of said optical reflectors is formed of two lateral half-reflectors, which are arranged on either side of a longitudinal axis of the lateral section, so as to at least partially reflect said uneven-order mode.

Abstract: A guide system including a railway rail extending along an axis and including an upper element having a rolling face; a lower element having a bearing face; a connecting element between the lower and upper elements, at least one lateral recess being formed between the lower and upper elements; at least first and second attitude sensors fixed to the rail by glue at respective positions offset along the axis of the rail, the attitude sensors being housed at least partially in the lateral recess; a processing circuit configured to recover attitude measurements supplied by the first and second attitude sensors and configured to calculate a deformation of the railway rail relative to the axis as a function of the recovered attitude measurements.

Abstract: An integrated circuit comprising: first to third nMOS transistors with different threshold voltages, and first to third pMOS transistors with different threshold voltages, the nMOS transistors having channel regions made of silicon subjected to tensile stress and/or said pMOS transistors having channel regions made of SiGe subjected to compressive stress; a first well and a second well that are arranged underneath the nMOS transistors and underneath the pMOS transistors, respectively, with one and the same doping; two nMOS gate stacks comprising one and the same material, two of the nMOS gate stacks comprising materials having separate work functions, an nMOS gate stack having one and the same material as a pMOS gate stack, with the equation: Gp*Vdds?Gn*Gnds=Sn*|?n|+Sp* (|?p|?1.65*109)?VarCais+K.

Abstract: A method of fabrication, including the steps for supplying a substrate including a layer of semiconductor material covered by a sacrificial gate including a sacrificial gate insulator including a middle part, and edges covered by sacrificial spacers and having a thickness tox; removal of the sacrificial gate insulator and the sacrificial gate material; formation of a conformal deposition of thickness thk of dielectric material inside of the groove formed in order to form a gate insulator, with tox>thk?tox/2; formation of a gate electrode within the groove; removal of the sacrificial spacers so as to open up edges of the gate insulator layer; formation of spacers on the edges of the gate insulator layer on either side of the gate electrode, these spacers having a dielectric constant at the most equal to 3.5.

Abstract: A method of production of a semiconducting structure including a strained portion tied to a support layer by molecular bonding, including the steps in which a cavity is produced situated under a structured part so as to strain a central portion by lateral portions, and the structured part is placed in contact and molecularly bonded with a support layer, wherein a consolidation annealing is performed, and a distal part of the lateral portions in relation to the strained portion is etched.

Abstract: The invention pertains to formation of a semiconducting portion (60) by epitaxial growth on a strained germination portion (40), comprising the steps in which a cavity (21) is produced under a structured part (11) by rendering free a support layer (30) situated facing the structured part (11), a central portion (40), termed the strained germination portion, then being strained; and a semiconducting portion (60) is formed by epitaxial growth on the strained germination portion (40), wherein the structured part (11) is furthermore placed in contact with the support layer (30) in such a way as to bind the structured part (11) of the support layer.

Abstract: Method of determining a rotation axis of an object during acquisition of projections obtained by a tomography characterisation system, comprising the following steps, starting from said projections: Select zones on the projections along the presumed rotation axis; Reconstruct a structure of the object using data in the selected zones, Make reprojections of the reconstruction; Determine a total offset for each selected zone; Determine the real rotation axis using total offsets determined for all zones.

Abstract: A circuit for generating a negative voltage on the basis of a positive voltage, including: at least one first transistor between a first terminal for applying a potential greater than a reference potential and a first node; a first capacitive element between the first node and a second node, a control terminal of said first transistor being linked to the second node; a first switch between the first node and a second terminal for applying the reference potential; a second switch between the second node and a third terminal for providing said negative voltage; a third switch between the second node and the second terminal; and a second capacitive element between the third terminal and the second terminal.

Abstract: A combustion module including a body including a combustion chamber, and at least one connector for supplying the combustion chamber with at least one combustible intended to be burned in the combustion chamber, is provided. The supply connector includes at least one inlet orifice intended to be connected to at least one source of combustible through a conduit and at least one outlet orifice intended to be connected to the at least one combustion chamber. The supply connector has a thermal conductivity substantially lower than that of the body such that the supply connector assures that the temperature at the inlet orifice of the supply connector and the conduit is lower than the auto-ignition temperature of the combustible(s).

Abstract: A method for forming a photovoltaic cell including a stack of at least two semi-conducting layers doped according to opposite types of conductivity, the method including a) forming first patterns made of a first conducting material by printing on at least one of faces of the stack; b) forming second patterns made of an insulating material by printing on the at least one of the faces of the stack, such that the insulating material is in contact with at least one part of lateral surfaces of the first patterns and such that thickness of the second patterns is less than that of the first patterns; and c) forming at least one second conducting material by electrolytic deposition on at least the first patterns.

Abstract: A solar cell including: a stack of at least two sub-cells, a tunnel diode, including first and second superposed layers that are highly doped with opposite conductivity types, being interposed between two adjacent sub-cells; a first electrode and a second electrode respectively in contact with one and other of faces positioned at the ends of the stack; and, for at least one tunnel diode, a third electrode and a fourth electrode in electrical contact respectively with the first layer and the second layer of the tunnel diode.

Abstract: A network interface for a first network on chip resource capable of interfacing a data processing unit in the first resource with the network, the network interface including an output communication controller including a mechanism detecting an indicator marking an end of communication between the first resource and at least one second resource with which a communication link is set up, and a mechanism outputting a signal indicating closure of the link to be sent to the second resource, after detection of an end of communication indicator.

Abstract: An optical transceiver (1) comprises: a ring resonator (6), a first waveguide (2) comprising, in succession, an input-output section (22), a coupling section (20) coupled to a first portion of the ring resonator and an amplification section (21) coupled to a first optical reflector (4) suitable for reflecting light toward the coupling section, a second waveguide (5) comprising, in succession, a reception section (52), a coupling section (50) coupled to a second portion of the ring resonator and a reflection section coupled to a second optical reflector (4) suitable for reflecting light toward the coupling section, a gain medium (7) arranged in the amplification section of the first waveguide and suitable for producing a stimulated light transmission, and an optical detector (8) coupled to the reception section of the second waveguide.

Abstract: The invention relates to a process for detection of a signal in a frequency sub-band of a frequency band of an acquired signal y(t), the process comprising: acquisition of the signal y(t) in a frequency band; frequential analysis of said acquired signal y(t) to obtain at least one frequential signal Y with NFFT frequential components; breakdown into M frequency sub-bands i of size N of the frequential signal Y, the size of each frequency sub-band being a function of the bandwidth of the signal to be detected; determination, in the frequential domain, for each frequency sub-band, of a criterion Ti,i=1, . . . , M as a function of the energy of the signal in the frequency sub-band i and of the coefficient two of the autocorrelation function of the signal in the frequency sub-band i; decision, as a function of the criterion Ti, to determine whether a signal is detected in the sub-band i.

Abstract: A method of calibrating a direct neural interface system comprising the steps of: a. acquiring electrophysiological signals representative of a neuronal activity of a subject's brain over a plurality of observation time windows and representing them in the form of a N+1-way tensor (X), N being greater or equal to one, called an observation tensor; b. acquiring data indicative of a voluntary action performed by said subject during each of said observation time windows, and organizing them in a vector or tensor (y), called an output vector or tensor; and c. determining a (multi-way) regression function of said output vector or tensor on said observation tensor.

Abstract: An optoelectric device including microwires or nanowires on a support, each microwire or nanowire including at least one portion mainly containing a III-V compound in contact with the support, wherein the III-V compound is based on a first group-V element and on a second group-III element, wherein a surface of the support includes first areas of a first material promoting the growth of the III-V compound according to the polarity of the first element distributed in a second area of a second material promoting the growth of the compound according to the polarity of the second element, the microwires or nanowires being located on the first areas.

Abstract: An imaging device including an element having at least a reflective sphere portion wall, a converging lens, and an image detection array, wherein the lens and the array are fixedly assembled with respect to each other on a mount, said mount being hinged with respect to said element.

Abstract: The invention relates to a process for detection of a signal in a frequency sub-band of a frequency band of an acquired signal y(t), the process comprising: acquisition of the signal y(t) in a frequency band; frequential analysis of said acquired signal y(t) to obtain at least one frequential signal Y with NFFT frequential components; breakdown into M frequency sub-bands i of size N of the frequential signal Y, the size of each frequency sub-band being a function of the bandwidth of the signal to be detected; determination, in the frequential domain, for each frequency sub-band, of a criterion Ti,i=1, . . . , M as a function of the energy of the signal in the frequency sub-band i and of the coefficient two of the autocorrelation function of the signal in the frequency sub-band i; decision, as a function of the criterion Ti, to determine whether a signal is detected in the sub-band i.

Abstract: Method for producing a structure comprising an active part comprising a first and a second suspended zone of different thicknesses from a first comprising substrate, said method comprising the following steps: a) machining the front face of the first substrate to define the lateral contours of at least one first suspended zone according to a first thickness less than that of the first substrate, b) forming a stop layer of etching of the first suspended zone under said suspended zone, to do this a prior step of removal of the semi-conductor material arranged under the first suspended zone takes place, c) forming on the front face of the first substrate a sacrificial layer, d) machining from the rear face of the first substrate up to releasing said sacrificial layer to form at least one second suspended zone to reach the stop layer of the first suspended zone, e) releasing the first and second suspended zones.

Abstract: A thermally assisted magnetic writing device including a first magnetic layer known as the “reference layer,” a second magnetic layer known as the “storage layer” that presents a variable magnetization direction, a spacer situated between the reference layer and the storage layer and a first antiferromagnetic layer in contact with the storage layer, the first antiferromagnetic layer being able to trap the magnetization direction of the storage layer. The magnetic device also includes a stabilization layer made of a ferromagnetic material, the stabilization layer being in contact with the first antiferromagnetic layer.